Nissan Chemical Industries Limited

Tomohisa Ishida

Tadashi Hatanaka

Shojiro Yukawa

Yoshiomi Hiroi

Takafumi Endo

Rikimaru Sakamoto

Yoshihito Tsukamoto

There is provided a cured-film formation composition for providing an orientation material that has high photoreaction efficiency and excellent solvent resistance with adhesion durability, and that enables a polymerizable liquid crystal to be aligned even on a resin film in a highly sensitive manner. A cured-film formation composition including: (A) an acrylic polymer having a photo-aligning group; (B) a polymer having any one of a hydroxy group, a carboxy group, and an amino group on at least two terminals of a group bonded to a main chain; and (C) a cross-linking agent. An orientation material and a retardation material are obtained with the cured-film formation composition.

Cured-film formation composition, orientation material, and retardation material

There is provided a cured-film formation composition that forms a cured film having excellent photoreaction efficiency and solvent resistance, and high adhesion, an orientation material for photo-alignment, and a retardation material formed with the orientation material.

Cured film formation composition, orientation material, and retardation material

A cured-film formation composition for forming a cured film having photoreaction efficiency and solvent resistance, and high adhesiveness alignment uniformity, and an orientation material for photo-alignment, and a retardation material formed by use of the orientation material. A cured-film formation composition includes (A) a compound having a photo-aligning group and one substituent selected from a hydroxy group, a carboxy group, and an amino group; (B) a hydrophilic polymer having one or more substituents selected from a hydroxy group, a carboxy group, and an amino group; and (C) a polymer obtained by polymerizing a monomer including an N-hydroxymethyl compound or an N-alkoxymethyl (meth)acrylamide compound, and optionally further a cross-linking catalyst as a component (D). By use of the composition, a cured-film is formed and an orientation material is formed by utilizing photo-alignment technique. A retardation material is obtained by applying a polymerizable liquid crystal on the orientation material and curing it.

There is provided a cured-film formation composition that forms a cured film having excellent photoreaction efficiency and solvent resistance, and high adhesion, an orientation material for photo-alignment, and a retardation material formed with the orientation material. The cured-film formation composition comprises a component (A) that is a compound having a photo-aligning group and one substituent selected from a hydroxy group, a carboxy group, anvil an amino group, a component (B) that is a hydrophilic polymer having one or more substituents selected from to hydroxy group, a carboxy group, and an amino group; and a component (C) that is cross-linking agent that reacts with the component (A) and the component (B) and reacts at a temperature lower than a sublimation temperature of the component (A), wherein when the component (B) is an acrylic polymer, the cured-film formation composition further comprises a component (E) that is an adhesion enhancing component. The cross-linking agent of the component (C) may be more hydrophilic than the component (A). The orientation material is thrilled by thrilling a cured film with the cured-film formation composition and utilizing photo-alignment technique. The retardation material is obtained by applying a polymerizable liquid crystal on the orientation material and curing it.

There is provided a composition for forming a resist underlayer film not only having a large selection ratio of a dry etching rate but also exhibiting desired values of the k value and of the refractive index n at a short wavelength such as a wavelength of an ArF excimer laser. A resist underlayer film forming composition for lithography comprising: a linear polymer; and a solvent, wherein a backbone of the linear polymer has a unit structure in which 2,4-dihydroxy benzoic acid is introduced through an ester bond and an ether bond.

Resist underlayer film forming composition and method of forming resist pattern using the same

There is provided a composition for forming a resist underlayer film having a large selection ratio of dry etching rate, exhibiting desired values of the k value and the refractive index n at a short wavelength, for example, in an ArF excimer laser, and further, exhibiting solvent resistance. A resist underlayer film forming composition for lithography comprises a linear polymer having, in a main chain thereof, at least one of an aromatic ring-containing structure and a nitrogen atom-containing structure; and a solvent, wherein to the aromatic ring or the nitrogen atom, at least one alkoxyalkyl group or hydroxyalkyl group is directly bonded.

Resist underlayer film forming composition and method for forming resist pattern

It is an object to provide a resist underlayer film forming composition having a selection ratio of dry etching rate larger than that of a resist film and exhibiting a low k value and a high n value at a short wavelength such as that of an ArF excimer laser, and enabling the formation of a resist pattern having a desired shape. When the composition is produced or used, it is required that odor due to a raw material monomer causes no problem. The object is solved by a resist underlayer film forming composition for lithography containing a polymer having in backbone thereof, a disulfide bond (S&#x2014;S bond), and a solvent. The polymer may be a product of a reaction between at least one type of compound (diepoxy compound) containing two epoxy groups and at least one type of dicarboxylic acid containing a disulfide bond.

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Funabashi, Japan

Tomohisa Ishida