Tdk Corporation

Tomohisa Azuma

Masakazu Hirose

Masahito Furukawa

Kenta Ishii

Hideaki Sone

Masaru Nanao

Akira Suzuki

Hitoshi Sakuma

Takeo Tsukada

Goushi Tauchi

Hideya Sakamoto

Taku Masai

Satoko Ueda

Norimasa Sakamoto

Tatsuji Sano

Kouji Taniwaki

A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first oxide layer stacked on the first electrode layer, a second oxide layer stacked on the first oxide layer, and a piezoelectric thin film stacked on the second oxide layer, the electrical resistivity of the first oxide layer is higher than the electrical resistivity of the second oxide layer, the first oxide layer includes K, Na, and Nb, and the piezoelectric thin film includes (K,Na)NbO.

Piezoelectric thin film-stacked body, piezoelectric thin film substrate, piezoelectric thin film device, piezoelectric actuator, piezoelectric sensor, head assembly, head stack assembly, hard disk drive, printer head, and ink-jet printer device

A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABOas a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least Nb (niobium), the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains; and the average particle diameter of the crystal grains is larger than 3 &#x3bc;m and not larger than 30 &#x3bc;m.

Piezoelectric ceramic sputtering target, lead-free piezoelectric thin film and piezoelectric thin film element using the same

A piezoelectric ceramic sputtering target containing a perovskite type oxide represented by chemical formula (I) of ABOas a main component, wherein the component A of the chemical formula (I) contains at least K (potassium) and/or Na (sodium), the component B of the chemical formula (I) contains at least one selected from the group consisting of Nb (niobium), Ta (tantalum) and Zr (zirconium) with Nb (niobium) as a necessity, the piezoelectric ceramic sputtering target is composed of a plurality of crystal grains and grain boundaries existing among the crystal grains, and in the grain boundary, the molar ratio of at least one of Nb (niobium), Ta (tantalum), and Zr (zirconium) in the B components is higher than the molar ratio in the interior of the crystal grains by 30% or more.

A piezoelectric device includes a first electrode film, a piezoelectric film disposed on the first electrode film, and a second electrode film disposed on the piezoelectric film. At least one of the first and second electrode films is composed of an alloy, and a main component of the alloy is a metal selected from the group consisting of Ti, Al, Mg, and Zn. The piezoelectric film has a main composition represented by (KNaLiBaSr)(NbTaZr)O(1), where x, y, z, w, v, u, and m in formula (1) satisfy 0.4&#x3c;x&#x2266;0.7, 0.02&#x2266;y&#x2266;0.11, 0.5&#x2266;x+y&#x3c;0.75, 0&#x3c;z&#x2266;0.28, 0&#x3c;w&#x2266;0.02, 0.02&#x2266;v&#x2266;0.11, 0.02&#x2266;u&#x2266;0.11, and 0.95&#x2266;m&#x3c;1.2, and contains 1% by mass or less of MnO relative to the main composition.

Piezoelectric device

A piezoelectric ceramic with environmental friendliness including a composition as the main component composed of a composite oxide free from lead (Pb) as a constituent element, and with excellent piezoelectric characteristics such as the relative dielectric constant, the electromechanical coupling factor, and the piezoelectric constant, and a piezoelectric device using the piezoelectric ceramic, are provided. A piezoelectric ceramic including a composition represented by the following general formula as the main component: (K1-x-y-w-vNaxLiyBawSrv)m(Nb1-z-uTaz-Zru)O3 (wherein, x, y, z, w, v, u and m in the formula satisfy the following conditions respectively: 0.4&#x3c;x&#x2266;0.7; 0.02&#x2266;y&#x2266;0.1; 0&#x3c;z&#x2266;0.3; 0&#x3c;w&#x2266;0.01; 0.04&#x2266;v&#x2266;0.07; 0.04&#x2266;u&#x2266;0.07; and 0.95&#x2266;m&#x3c;1).

Piezoelectric ceramic comprising an oxide and piezoelectric device

Provided is a piezoelectric ceramic composition which can increase Qof a resonator and inhibit the resonator from changing its oscillation frequency Funder a low temperature environment. The piezoelectric ceramic composition has a structure represented by the following general formula (1):(PbLnMe)(TiZrMnNb)O&#x2003;&#x2003;(1)where Ln is a lanthanoid element, Me is an alkaline-earth metal element, &#x3b1;&#x3e;0, &#x3b2;&#x3e;0, &#x3b3;&#x2267;0, 0.965&#x2266;&#x3b1;+&#x3b2;+&#x3b3;&#x2266;1.000, 0.158&#x2266;x&#x2266;0.210, y&#x2267;0, z&#x2267;0, and 1&#x2212;(x+y+z)&#x3e;0.

Piezoelectric ceramic composition, piezoelectric element, and resonator

A piezoelectric ceramic composition excellent in all of the electric property Q, heat resisting properties and temperature characteristics of oscillation frequencies is provided. The piezoelectric ceramic composition comprises a phase mainly comprising lead zirconate titanate having a perovskite structure and an Al-containing phase. In the piezoelectric ceramic composition, the main component preferably comprises Mn and Nb, and is preferably represented by a composition formula of Pb[(MnNb)TiZr]O(wherein 0.97&#x2266;&#x3b1;&#x2266;1.01, 0.04&#x2266;x&#x2266;0.16, 0.48&#x2266;y&#x2266;0.58, 0.32&#x2266;z&#x2266;0.41).

Piezoelectric ceramic composition

Provided is a piezoelectric ceramic composition which enables the attainment of sufficiently high Qand good temperature characteristics of oscillation frequency Fwhen applied in an oscillator utilizing third harmonic mode of thickness longitudinal vibration. The piezoelectric ceramic composition contains a composite oxide having a perovskite structure. The composite oxide has a composition expressed by the chemical formula (1), while satisfying 0.91&#x2266;&#x3b1;&#x2266;1.00, 0&#x3c;&#x3b2;&#x2266;0.08, 0.125&#x2266;x&#x2266;0.300, 0.020&#x2266;y&#x2266;0.050, and 0.040&#x2266;z&#x2266;0.070(PbLn)(TiZrMnNb)O&#x2003;&#x2003;(1)where Ln signifies at least one element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Piezoelectric ceramic composition and oscillator

There are provided steps of polarizing a ceramic composition including a perovskite compound containing Pb, Zr, Ti and Mn as main components and a heat treatment step for keeping the polarized ceramic composition within a temperature range lower than Tc (Tc denoting the Curie temperature of the ceramic composition) for 1 to 100 minutes.

Method of manufacturing a piezoelectric ceramic composition

There is provided a resonator having a piezoelectric ceramic resonator which has excellent free-fall resistance. The resonator comprises a piezoelectric ceramic resonatorwith a vibrating electrode formed, and a substratewhich supports the piezoelectric ceramic resonator, wherein the piezoelectric ceramic resonatorsatisfies the condition of U&#x2267;0.88&#xd7;H+20.28, wherein U=maximum elastic energy (kJ/m) per unit volume, and H=drop height (m) (H&#x3e;1). The present invention can be applied to a resonator, wherein the substratehas terminal electrodes, and the piezoelectric ceramic resonatoris in electrical continuity with the vibrating electrode and is supported on the substrateat both ends via a conductive stator

Resonator

The present invention has an object to provide piezoelectric ceramics containing no lead, having a high Curie point, and further, having excellent piezoelectric properties, particularly large Qmax. The piezoelectric ceramics contain, as a main component, a bismuth layer-structured compound having (MLn)BiTiOcrystals (Mis an element selected from Sr, Ba, and Ca, Ln is an element selected from lanthanoids, and x is within a range of 0&#x3c;x&#x2266;0.5) and further contain, as secondary components, at least one of Mn oxide and Co oxide, and lanthanoid, wherein the lanthanoid being the secondary component is contained within a range of 0.02 to 0.12 wt % in terms of oxide thereof.

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Tokyo, Japan

Tomohisa Azuma