Sharp Kabushiki Kaisha Corporation

Tomohisa Aoki

Yuhichi Saitoh

Hiroaki Furukawa

Atsushi Hachiya

A display device includes a pixel circuit and a light-emitting element, the pixel circuit including: a transistor with a first structure including a crystalline silicon semiconductor film and a first gate electrode; and a transistor with a second structure including an oxide semiconductor film and a second gate electrode, the display device further includes: a first interlayer insulation film; and a second interlayer insulation film, wherein the pixel circuit includes: a drive transistor that has the first structure: and a capacitive element, the capacitive element includes: a first capacitor electrode electrically connected to a first gate electrode of the drive transistor; a second capacitor electrode opposite the first capacitor electrode; and a dielectric film between the first capacitor electrode and the second capacitor electrode, and the dielectric film is disposed in a different layer than are the first interlayer insulation film and the second interlayer insulation film.

Display device and method of manufacturing display device

An oxide semiconductor layer includes a second channel region and a second conductor region. The lower metal layer includes a contact wire in contact with the second conductor region. The upper metal layer includes an upper wire. A second interlayer insulating film is provided with a second contact hole overlapping an upper wire and the contact wire. The second conductor region and the upper wire electrically connect together through the contact wire.

Display device having a first transistor including a crystalline silicon semiconductor layer and a second transistor including an oxide semiconductor layer

A crystalline silicon semiconductor layer includes a first channel region and a second conductor region. An oxide semiconductor layer includes a second channel region and a second conductor region. An lower metal layer includes a lower wire. The lower wire is in contact with a first conductor region in a first contact hole. The first conductor region and the second conductor region are electrically connected together through the lower wire.

Display device

One conductor region of a crystalline silicon semiconductor layer in a first transistor is electrically connected to one conductor region of an oxide semiconductor layer in a second transistor through a first contact hole and a second contact hole communicating with each other.

An active matrix substrate includes a demultiplexer circuit which includes multiple TFTs. Each TFT includes a gate electrode, an oxide semiconductor layer that includes a source contact area, a drain contact area, and an area between a source and a drain that includes a channel region, a channel protection layer that covers only a portion of the area between the source and the drain, a source electrode that is brought into contact with the source contact area, and a drain electrode that is brought into contact with the drain contact area. At a cross-section in a channel length direction, of each TFT, an end portion facing toward the channel region, of one of the source and drain electrodes is brought into contact with the channel protection layer, and an end portion facing toward the channel region, of the other is positioned at a distance away from the channel protection layer.

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Sakai, Japan

Tomohisa Aoki