Daikin Industries, Ltd.

Sumitomo Electric Industries, Limited

Mitsubishi Tanabe Pharma Corporation

Hitachi, Ltd.

Dow Corning Corporation

Sumitomo Electric Device Innovations, Inc.

Osaka University

Essilor International

Tomohiro Yoshida

Hiroshi Sakashita

Hisashi Mitsuhashi

Fumihiko Akahoshi

Yoshito Tanaka

Peter Cheshire Hupfield

Don Lee Kleyer

Tetsuya Masutani

Masahiko Maeda

Masatoshi Nose

Yasuo Itami

Takashi Namikawa

Kakeru Hanabusa

Kenichi Katsukawa

Yasuhiro Kashirajima

Yuko Shiotani

Dai Fukami

Naoko Ueda

Shinji Kirihara

Satoru Uemori

Reiko Tsutsumiuchi

Ikuo Yamamoto

Yoshiharu Hayashi

Masahiro Higashi

Hiroshi Kitajima

Mamoru Tachikawa

Masahiro Takeuchi

Akinari Sugiyama

Akihiro Oshima

Yasushi Sugiura

Takabumi Nagai

Norimasa Uesugi

Michio Matsuda

Hiroyuki Ichikawa

Kaori Ozawa

Yoshinori Taniguchi

Yoshihito Tanaka

Kazuyuki Satou

Kensuke Mohara

Masayuki Hayashi

Pierre-Jean Calba

Gregory Hervieu

Shouta Shibutani

Junichi Ito

Yasuhiko Inadomi

Teruo Mikami

Chihoko Mizue

Atsushi Numata

Shinsuke Ohshita

Yoshikage Ohmukai

Masakatsu Senda

Ryoji Shimokawa

Akiko Oya

Saya Yokotani

Tomomi Irita

Saori Tahara

Hisashi Kawasumi

Takuya Yoshimura

Rena Inamasu

Tetsuya Mastutani

Semiconductor device includes a semiconductor layer, an insulating film provided on the semiconductor layer and having an opening formed therein, a gate electrode connected to the semiconductor layer through opening, a protection film covering gate electrode, and a Ni oxide film, wherein the insulating film has a first surface on the semiconductor layer side and a second surface opposite to the first surface, and the gate electrode has a third surface facing the second surface and spaced apart from the second surface and a fourth surface connecting the second surface and the third surface. The gate electrode includes a Ni film constituting the third surface and the fourth surface, and the Ni oxide film covers the Ni film on the third surface and the fourth surface. The protection film covers the third surface and the fourth surface by being placed over Ni oxide film.

Semiconductor device having nickel oxide film on gate electrode

A water repellent composition containing: (A) water repellent particles in which the number of surface alkyl groups on the water repellent particles is 600×10-50,000×10per 1 g of water repellent particles; (B) a water-repellent resin which is a polymer having a long-chain Chydrocarbon group; and (C) a liquid medium. The water-repellent particles preferably have an average primary particle size of 1-100 nm. Also disclosed is a method for treating a fiber using the water repellent composition, a method for producing a treated textile product, a film formed from the water repellent composition, and a textile product treated with a treatment liquid containing the water-repellent composition.

Water-repellent composition

A fluorine-containing epoxy resin for an electronic component represented by the following formula (E) wherein n is an integer of 0 or greater, an average value of n is 0.18 or smaller, and M is a group represented by the following formula (E1), a group represented by the following formula (E2), or a group represented by the following formula (E3) wherein Z is hydrogen or a C2-C10 fluoroalkyl group. The formula (E) being: the formula (E1) being: the formula (E2) being: the formula (E3) being: Also disclosed is a method for producing the fluorine-containing epoxy resin as well as a curable composition containing the fluorine-containing epoxy resin and a curing agent.

Fluorine-containing epoxy resin for electrical materials and method for manufacturing same

A method for producing a paper, which includes applying at least one of ionizing radiation and plasma to at least one of a paper base and a compound (A) selected from: a compound having a carbon-carbon unsaturated bond and containing no fluorine atom in a molecular structure, and a compound containing no fluorine atom in a molecular structure in which radicals are generated by irradiation of an electron beam to the compound, to introduce a layer formed from the compound (A) on a surface of the paper base.

Method for producing paper

A process of forming a nitride semiconductor device is disclosed. The process includes steps of: (a) forming insulating films on a semiconductor stack, where the insulating films include a first silicon nitride (SiN) film, a silicon oxide (SiO) film, and a second SiN film; (b) forming an opening in the insulating films; (c) widening the opening in the SiOfilm; (d) forming a recess in the semiconductor stack using the insulating films as a mask; (e) growing a doped region within the recess and simultaneously depositing the nitride semiconductor material constituting the doped region on the second SiN film; and (f) removing the nitride semiconductor material deposited on the second SiN film and the second SiN film by removing the SiOfilm.

Process of forming nitride semiconductor device

A surface-treating agent including at least one perfluoro(poly)ether group containing silane compound of the formula (1): wherein each of symbols is as defined herein, wherein a number average molecular weight of the perfluoro(poly)ether group containing silane compound is 3000 or more and 6000 or less, and wherein 80 mol % or more of the perfluoro(poly)ether group containing silane compound contained in the surface-treating agent is a compound wherein g is 2 or more.

Surface treating agent including perfluoro(poly)ether-group-containing silane compound

A surface-treating agent including at least one perfluoro(poly)ether group containing silane compound of the formula (1): wherein Rf, PFPE, Z, Q, R, R, X, Y, e, f, g, h and n are as defined herein. Also disclosed is a process for preparing the compound of formula (1).

A process of forming a field effect transistor is disclosed. The process includes steps of depositing a first silicon nitride (SiN) film on a semiconductor layer by a low pressure chemical vapor deposition (LPCVD) technique; depositing a second SiN film on the first SiN film by plasma assisted chemical vapor deposition (p-CVD) technique; preparing a photoresist mask on the second SiN film, the photoresist mask having an opening in a position corresponding to the gate electrode; dry-etching the second SiN film and the first SiN film continuously in a portion of the opening in the photoresist mask to form an opening in the first SiN film and an opening in the second SiN film, the openings in the first and second SiN films exposing the semiconductor layer; and filling at least the opening in the first SiN film by the gate electrode. A feature of the process is that the opening in the first SiN film has an inclined side against the semiconductor layer and gradually widens from the semiconductor layer.

Process of forming field effect transistor

A transistor type of field effect transistor (FET) having a field plate is disclosed. The FET provides an active region and two inactive regions sandwiching the active region therebetween, where the electrodes are provided in the active region. The FET further includes fingers and buses of the drain and the source. The fingers overlap with the electrodes of the drain and the source; while the busses are provided in respective inactive regions. The field plate includes a field plate finger and a field plate interconnection. The field plate finger extends parallel to the gate electrode in a side facing the drain electrode. The field plate interconnection connects the field plate finger with the source interconnection in the inactive region opposite to the inactive region where the drain bus exists.

Semiconductor device having field plate

A process of forming a gate electrode in an electrode device is disclosed. The process includes steps of, depositing an insulating film on a nitride semiconductor layer; forming a photoresist with an opening corresponding to the gate electrode on the insulating film; forming a recess in the insulating film using the photoresist as an etching mask, the recess leaving a rest portion in the insulating film; exposing the photoresist in oxygen plasma; baking the photoresist to make an edge of the opening thereof dull; etching the rest portion of the insulating film using the dulled photoresist as an etching mask; and forming the gate electrode so as to be in contact with the semiconductor layer through the opening in the insulating film.

Process of forming electron device having gate electrode

The present invention aims to provide a composition capable of forming a coat which has a good effect of preventing corrosion of metal and is excellent in adhesiveness with metal, transparency, and insulation. The composition of the present invention includes a fluoropolymer having at least one group selected from the group consisting of polymerizable functional groups and cross-linkable functional groups, and a nitrogen-containing aromatic heterocyclic compound having a polymerizable functional group.

Composition including fluorine-containing polymer comprising at least one type of group selected from group comprising polymerizable functional groups and cross-linkable functional groups; and coated article

A composition including a compound containing a carbon-carbon double bond obtained by reacting (A) a polyisocyanate which is a trimer of diisocyanate, with (B) a compound having an active hydrogen, wherein component (B) includes: (B1) a perfluoropolyether having an active hydrogen, (B2) a silane compound having an active hydrogen, and (B3) a monomer having an active hydrogen and a carbon-carbon double bond. Further, a molar amount of an isocyanate group in component (A) is equal to a total molar amount of component (B), and a molar amount of component (B1), component (B2) and component (B3) per 9 moles of the isocyanate group in component (A) are component (B1) 0.1-2 moles, component (B2) 0.05-2 moles, and component (B3) 5-8.85 moles, respectively.

Surface treatment composition

The present invention provides a fluorine-containing and silicon-containing polymer of the general formula (A) or (B) (wherein each symbol is as defined in the description) which is useful for forming a surface treatment layer having water-repellency, oil-repellency and antifouling property and excellent surface slip property.

Fluorine-containing, silicon-containing polymer and surface treatment agent

The present invention provides a composition which is able to form a layer having excellent surface slip property and friction durability in addition to water-repellency, oil-repellency and antifouling property. The present invention provides a surface-treatment composition comprising (A) at least one fluorine-containing polymer having a curable moiety, and (B) at least one silicon-containing polymer having a curable moiety.

A surface-treating composition including a fluorine-containing polymer which is able to form a layer having both high surface slip property and high friction durability. The surface-treating composition includes a first compound (a reactive fluorine-containing polymer which is a fluorine-containing silane polymer) and a second compound (a non-reactive fluorine-containing polymer which is a fluorine-containing oil), and the proportion of the first compound is 15 to 70% by mass with respect to the total mass of the first compound and the second compound.

Surface treatment composition and article obtained using same

Growing community of inventors

Osaka, Japan

Tomohiro Yoshida