Asahi Kasei Kabushiki Kaisha

Asahi Kasei E-materials Corporation

Kabushiki Kaisha Toshiba

Tomohiro Yorisue

Taihei Inoue

Takahiro Sasaki

Yoshito Ido

Mitsutaka Nakamura

Tatsuya Hirata

Harumi Matsuda

Koji Asakawa

Ryota Kitagawa

Akira Fujimoto

Tomoshige Yunokuchi

Yoshiaki Shirae

Akihiko Ikeda

Daisuke Sasano

A semiconductor device having a copper wiring and an insulating layer provided on the copper wiring, where after storage in air with a humidity of 5% for 168 hours at 150&#xb0; C., the area of void portion of the copper wiring is 10% or less at the copper wiring surface in contact with the insulating layer. The insulating layer contains at least one polyimide that has (i) a structure derived from 4,4'-oxydiphthalic acid dianhydride and a structure derived from 4,4&#x2032;-diaminodiphenyl ether; or (ii) a structure derived from 3,3&#x2032;4,4&#x2032;-biphenyltetracarboxylic acid dianhydride and a structure derived from 4,4&#x2032;-diaminodiphenyl ether; or (iii) a structure derived from 4,4&#x2032;-oxydiphthalic acid dianhydride and a structure derived from 2,2&#x2032;-dimethyl-4,4&#x2032;-diaminobiphenyl.

Photosensitive resin composition, polyimide production method, and semiconductor device

A negative-type photosensitive resin composition that has a satisfactory imidization rate and can yield a resin layer with high chemical resistance, even under low-temperature curing conditions of 200&#xb0; C. or below, the negative-type photosensitive resin composition containing a photopolymerization initiator (B) in a proportion of 0.1 part by mass to 20 parts by mass with respect to 100 parts by mass of a polyimide precursor (A), the polyimide precursor (A) being a polyamic acid ester or polyamic acid salt with a specific structure, and the weight-average molecular weight (Mw) of the polyimide precursor (A) being 3,000 or greater and less than 16,000, in terms of polystyrene, according to gel permeation chromatography (GPC).

Photosensitive resin composition and method for producing cured relief pattern

A photosensitive resin composition containing a resin and a compound each having a structure specified by the present specification provides a cured film having excellent adhesiveness to copper wiring.

Photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor apparatus

A photosensitive resin composition, ensuring that after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and a high-adhesion polyimide layer is obtained, and a polyimide using the photosensitive resin composition, can be provided. Furthermore, a semiconductor device in which after a high-temperature storage test, a void is less likely to be generated at the interface of a Cu layer in contact with a polyimide layer and short circuiting or disconnection following a high-temperature storage test is unlikely to occur. A photosensitive resin composition is characterized by including a component (A) as a photosensitive polyimide precursor, and a component (B) containing a structure represented by formula (B1). (In formula (B1), Z is a sulfur or oxygen atom, and each of Rto Rindependently represents a hydrogen atom or a monovalent organic group).

Disclosed are: a resin composition for pattern formation, which enables the stable formation of a pattern at a level of the wavelength of light; a method for forming a pattern having a sea-island structure using the composition; and a process for producing a light-emitting element that can achieve high luminous efficiency properties. The resin composition for pattern formation comprises: (a) a specific block copolymer containing an aromatic ring-containing polymer and a poly(meth)acrylate as block moieties; (b) a homopolymer of a specific aromatic ring-containing polymer; and (c) a homopolymer of a specific poly(meth)acrylate, wherein the ratio of the total amount of the aromatic ring-containing homopolymer (b) and the poly(meth)acrylate homopolymer (c) relative to the entire resin composition is 0% by weight to 90% by weight, and the total amount of an aromatic ring-containing polymer moiety contained in the block copolymer (a) as a block moiety and the aromatic ring-containing homopolymer (b) relative to the entire resin composition is 10% by weight to 60% by weight.

Resin composition for pattern formation, pattern formation method and process for producing light-emitting element

A photosensitive resin composition is used that comprises a photosensitive silicone having a styryl group as a photosensitive group, and a photopolymerization initiator having a specific structure. As a result, a photosensitive resin composition capable of being cured in air by photopolymerization that is preferable for use as a buffer coat material or rewiring layer of an LSI chip, a method for forming a cured relief pattern using this photosensitive resin composition, and a semiconductor device comprising the cured relief pattern are provided.

Photosensitive resin composition

A photosensitive resin composition comprising a photosensitive silicone compound of specified molecular weight having any of specified photosensitive substituents and a photopolymerization initiator in any of specified proportions is used. Thus, there can be obtained a resin composition containing a photosensitive silicone compound that provides a material suitable for a rewiring layer or a buffer coat material of LSI chip, less in a film loss between before and after curing and improved in the stickiness of pre-exposure stage. Further, there can be obtained a resin insulating film utilizing the resin composition.

Growing community of inventors

Tokyo, Japan

Tomohiro Yorisue