Tomy Company, Ltd.

Sony Semiconductor Solutions Corporation

Sony Corporation

Mitsubishi Chemical Corporation

The University of Tokyo

Ricoh Company, Ltd.

Tomy Incorporated

Sony Group Corporation

Tomohiro Yamazaki

Yoshinori Muramatsu

Yumiko Mori

Kentaro Akiyama

Shuji Uehara

Hironobu Katayama

Hiroshi Horikoshi

Yoshihiro Watanabe

Noriaki Takahashi

Koji Kikuchi

Yasushi Maruyama

Masatoshi Ishikawa

Masahiro Nukui

Hideko Akai

Kazunori Maruyama

Takashi Kokubo

Masatoshi Kimura

Masashi Nakata

Masanori Iwasaki

Takashi Machida

Shintarou Hirata

Shigetaka Kudo

Kiyotaka Tabuchi

Yoshinori Toumiya

Masae Kubo

Shinichiro Noudo

Michio Kawai

Takashi Terada

Hitoshi Itakura

Junichi Kanai

Naoyuki Miyashita

Yasuyuki Shiga

Katsunori Kokubun

Yuqing Xu

Hideyuki Kato

Iwao Sugiura

Kazuhiko Muraoka

Motonori Ueda

Yuichiro Baba

Takuma Matsuno

Usei Jo

Shigenobu Harada

Yukari Taguchi

An information processing apparatus, an information processing method, and a non-transitory recording medium. The information processing apparatus determines an external device with maximum capacity among a plurality of external devices with non-volatile storage media for storing log information, changes an amount of log information according to a capacity of the external device with the maximum capacity, and outputs the log information to the external device with the maximum capacity.

Information processing apparatus to determine an external device with maximum capacity among a plurality of external devices with storage media for storing log information, information processing method, and non-transitory recording medium

Pixel sensitivity is improved in a solid-state imaging element that performs time delay integration. The solid-state imaging element includes a plurality of photoelectric conversion elements and a given number of transistors. In the solid-state imaging element, the plurality of photoelectric conversion elements is arranged along a given direction with a given spacing. A size, in the given direction, of each of the plurality of photoelectric conversion elements that are arranged with the given spacing does not exceed the given spacing. Also, in the solid-state imaging element, the given number of transistors are arranged between the plurality of photoelectric conversion elements, and the transistors generate a signal commensurate with an amount of charge generated by any of the plurality of photoelectric conversion elements.

Solid-state imaging element and imaging apparatus

An imaging apparatus including (A) an imaging lens; and (B) an image sensor array in which a plurality of image sensor units are arrayed, wherein, a single image sensor unit includes a single microlens and a plurality of image sensors light passing through the imaging lens and reaching each image sensor unit passes through the microlens and forms an image on the plurality of image sensors constituting the image sensor unit, an inter-unit light shielding layer is formed between the image sensor units themselves, and a light shielding layer is not formed between the image sensor units which constitute the image sensor unit.

Imaging apparatus and image sensor array

Transmitted light loss in an image pickup device is reduced in forming an underlying film of optical elements. The image pickup device includes photoelectric conversion units, optical elements, and an underlying film of the optical elements. The photoelectric conversion units convert incident light into electric signals. The optical elements provide the incident light to the photoelectric conversion units. The underlying film of the optical elements is provided in a region between a first open region and a second open region of the optical elements in a layer between the optical elements and the photoelectric conversion units. Furthermore, the underlying film of the optical elements may be provided in a light-shielding region and a contact region outside an effective pixel region.

Image pickup device

The speed of AD conversion is to be improved in a solid-state imaging device that performs time delay integration. A solid-state imaging device includes: a pair of photoelectric conversion elements; a pair of floating diffusion layers; and a transfer unit that switches the transfer destination of each of the pair of photoelectric conversion elements to one of the pair of floating diffusion layers, and transfers electric charges to the transfer destination. In the solid-state imaging device including the pair of photoelectric conversion elements, the pair of floating diffusion layers, and the transfer unit, the transfer unit switches the transfer destination of each of the pair of photoelectric conversion elements to one of the pair of floating diffusion layers, and transfers electric charges to the transfer destination.

Solid-state imaging device, and imaging apparatus

Provided is an electronic device that decreases a width of a bezel, and restricts a decrease in an image quality of an image captured with a camera. The electronic device includes: a displaying unit; and a capture unit arranged on a side opposite a displaying surface of the displaying unit. The capture unit includes: a plurality of photoelectric-conversion units that converts light that has been made to enter through the displaying unit into electricity; and a plurality of polarization elements arranged on a light entering side of at least one photoelectric-conversion unit of the plurality of photoelectric-conversion units.

Electronic device that corrects images captured on a side opposite a displaying surface

Image quality is to be improved in a solid-state image pickup element that performs time delay integration. A correlated double sampling circuit generates a frame in which a predetermined number of lines each including a plurality of digital signals are arranged. A TDI frame memory retains a (K&#x2212;1)-th frame generated before a K-th frame. A time delay integration circuit performs time delay integration processing of adding the line having a predetermined address in the K-th frame and the line having an address at a certain distance from the predetermined address in the (K&#x2212;1)-th frame.

Solid-state image pickup element, image pickup apparatus, and method of controlling solid-state image pickup element

An imaging apparatus including an imaging lens, and an image sensor array of first and second image sensor units, wherein a single first image sensor unit includes a single first microlens and a plurality of image sensors, a single second image sensor unit includes a single second microlens and a single image sensor, light passing through the imaging lens and reaching each first image sensor unit passes through the first microlens and forms an image on the image sensors constituting the first image sensor unit, light passing through the imaging lens and reaching each second image sensor unit passes through the second microlens and forms an image on the image sensor constituting the second image sensor unit, an inter-unit light shielding layer is formed between the image sensor units, and a light shielding layer is not formed between the image sensor units constituting the first image sensor unit.

There is provided a method of manufacturing an imaging device including a plurality of imaging elements in an imaging area, where each imaging element includes a photoelectric conversion unit in a substrate and a wire grid polarizer arranged at a light-incident side of the photoelectric conversion unit. The method generally includes forming the wire grid polarizer that includes a plurality of stacked strip-shaped portions, where each of the plurality of stacked strip-shaped portions includes a portion of a light-reflecting layer and a portion of a light-absorbing layer. The light-reflecting layer may include a first electrical conducting material that is electrically connected to at least one of the substrate or the photoelectric conversion unit. The light-absorbing layer may include a second electrical conducting material, where at least a portion of the light-absorbing layer is in contact with the light-reflecting layer.

Imaging element, method of manufacturing imaging element, imaging device, and method of manufacturing imaging device

A decrease in strength is reduced of a polarizer of an imaging element in which the polarizer that detects polarization information of a subject is arranged. The imaging element includes a plurality of pixels. The plurality of pixels included in the imaging element each includes a color filter that transmits light having a predetermined wavelength of incident light and a polarizer that performs polarization of the incident light, and generates an image signal based on the incident light transmitted through the color filter and the polarizer. The polarizer included in each of the plurality of pixels adjusts the polarization depending on the color filter in a corresponding one of the pixels of the imaging element.

Imaging element and imaging device for controlling polarization of incident light

An imaging element of the present disclosure includes: a photoelectric conversion sectionprovided in a substrate; a polarizerformed over the photoelectric conversion section, with a single ground insulating layerinterposed therebetween; and a light shielding sectionA formed on an upper side of a peripheral region' around the photoelectric conversion section

Imaging element and solid-state imaging device

An image processor according to the present disclosure includes: a multiplier that receives image data from a pixel section including pixels of a plurality of colors and multiplies the image data by an adjustment parameter that adjusts a color level in each of the pixels; an adjuster that calculates a ratio of respective colors in each of the pixels in the image data and adjusts a value of the adjustment parameter on the basis of the ratio of the respective colors; and a binarization processor that extracts a target image of a specific color on the basis of the image data multiplied by the adjustment parameter.

Image processor, imaging device, and image processing system

A stacked imaging device includes a polarizer and a plurality of photoelectric conversion units that is stacked, and the polarizer and the plurality of photoelectric conversion units are stacked, with the polarizer being disposed closer to the light incident side than the plurality of photoelectric conversion units.

Stacked imaging device and solid-state imaging apparatus

An imaging device includes one or more insulating layers on a substrate; an effective region including: a polarization layer in the one or more insulating layers and including one or more polarizers that polarize light; and at least one first photoelectric conversion region in the substrate and that converts incident light polarized by the one or more polarizers into electric charge; and a peripheral region outside the effective region and including: one or more wiring layers that include a pad portion in a same layer of the one or more insulating layers as the polarization layer.

Solid-state imaging apparatus

Growing community of inventors

Kanagawa, Japan

Tomohiro Yamazaki