Canon Kabushiki Kaisha

Tomohiro Watanabe

Akira Uebayashi

Tatsuo Furuta

Taihei Mukaide

Ryo Hayashi

Shinya Koyama

Ayumu Sato

Makoto Kubota

Yasushi Shimizu

Hisato Yabuta

Koji Suzuki

Hideya Kumomi

Kanako Oshima

Kenji Taki

Hidenosuke Itoh

Yuto Niinuma

Toshihiko Akatsuka

A vibration wave motor includes an annular oscillator, and an annular moving member provided so as to be in press contact with the oscillator. The oscillator includes an annular vibrating plate, and an annular piezoelectric element provided on a first surface of the vibrating plate. The vibrating plate is in contact with the moving member via a second surface of the vibrating plate, which is opposite the first surface. The piezoelectric element has a plurality of drive phase electrodes. When a driving region represents a region of the oscillator in which the drive phase electrodes are provided, and a non-driving region represents a remaining region of the oscillator, a contact area ratio S1 between the vibrating plate and the moving member in the non-driving region is less than a contact area ratio S2 between the vibrating plate and the moving member in the driving region.

Vibration wave motor, drive control system, and optical apparatus

A vibration wave motor includes a driven body, a vibrator including an annular vibration plate and an annular piezoelectric element, and a vibration damping member, which are arranged in sequence, wherein the vibration plate has, on a side facing the driven body, radially extending groove portions at X places, and, when center depths of the groove portions at X places are sequentially denoted by Dto DX in a circumferential direction, Dto DX vary along a curve obtained by superposing one or more sine waves, and wherein the vibration plate is locally supported by the vibration damping member in some or all antinode portions of a standing wave occurring when the vibration wave motor is driven.

Vibration wave motor, drive control system, optical apparatus, and electronic apparatus

A piezoelectric material which is low in load on the environment, and also satisfies both the requirements of a high piezoelectric constant and a high mechanical quality factor. The piezoelectric material comprises a plurality of crystal grains containing Ba, Ca, Ti, Zr, Mn, and O. An average equivalent circle diameter of the crystal grains is not smaller than 1.0 &#x3bc;m and not larger than 10 &#x3bc;m. The crystal grains include crystal grains A each having a first domain with a width of not smaller than 300 nm and not larger than 800 nm, and crystal grains B each having a second domain with a width of not smaller than 20 nm and not larger than 50 nm.

Piezoelectric material, piezoelectric element, vibration wave motor, optical apparatus, and electronic apparatus

A piezoelectric material includes a metal oxide containing at least Ba, Ca, Ti, Zr, and Mn, in which the piezoelectric material has a perovskite structure, in which: x, which represents a ratio of a content (mol) of Ca to A (mol) representing a total content of Ba and Ca, falls within a range of 0.10&#x2264;x&#x2264;0.18; y, which represents a ratio of a content (mol) of Zr to B (mol) representing a total content of Ti, Zr, and Mn, falls within a range of 0.055&#x2264;y&#x2264;0.085; and z, which represents a ratio of a content (mol) of Mn to the B (mol), falls within a range of 0.003&#x2264;z&#x2264;0.012, and in which the piezoelectric material satisfies a relationship of 0&#x2264;(|d&#x2212;d|)/|d|&#x2264;0.08, and has a value of 130 pm/V or more for each of |d| and |d|.

Piezoelectric material, manufacturing method for piezoelectric material, piezoelectric element, vibration wave motor, optical equipment, and electronic device

A transistor comprises an active layer of an oxide containing at least one element selected from In, Ga and Zn. The active layer is formed such that a desorption gas monitored as a water molecule by a temperature programmed desorption analysis is 1.4/nmor less.

Insulated gate type transistor and display device

There is provided a glass composition containing an oxide containing Lu, Si, and Al, in which the composition of the glass composition lies within a compositional region of a ternary composition diagram of Lu, Si, and Al in terms of cation percent, the compositional region being defined by the following six points:

Glass composition and optical device

Provided is a method of producing a light-emitting apparatus having a field effect transistor for driving an organic EL device, the field effect transistor including an oxide semiconductor containing at least one element selected from In and Zn, the method including the steps of: forming a field effect transistor on a substrate; forming an insulating layer; forming a lower electrode on the insulating layer; forming an organic layer for constituting an organic EL device on the lower electrode; forming an upper electrode on the organic layer; and after the step of forming the semiconductor layer of the field effect transistor and before the step of forming the organic layer, performing heat treatment such that an amount of a component that is desorbable as HO from the field effect transistor during the step of forming the organic layer is less than 10g/m.

Light-emitting apparatus and production method thereof

Provided is an oxide semiconductor device including an oxide semiconductor layer and an insulating layer coming into contact with the oxide semiconductor layer in which the insulating layer includes: a first insulating layer coming into contact with an oxide semiconductor, having a thickness of 50 nm or more, and including an oxide containing Si and O; a second insulating layer coming into contact with the first insulating layer, having a thickness of 50 nm or more, and including a nitride containing Si and N; and a third insulating layer coming into contact with the second insulating layer, the first insulating layer and the second insulating layer having hydrogen contents of 4&#xd7;10atoms/cmor less, and the third insulating layer having a hydrogen content of more than 4&#xd7;10atoms/cm.

Oxide semiconductor device including insulating layer and display apparatus using the same

To achieve, in an oxide semiconductor thin layer transistor, both the stability of threshold voltage against electric stress and suppression of variation in the threshold voltage in a transfer characteristic. A thin film transistor includes an oxide semiconductor layer and a gate insulating layer disposed so as to be in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer contains hydrogen atoms and includes at least two regions that function as active layers of the oxide semiconductor and have different average hydrogen concentrations in the layer thickness direction; and when the regions functioning as the active layers of the oxide semiconductor are sequentially defined as, from the side of the gate insulating layer, a first region and a second region, the average hydrogen concentration of the first region is lower than the average hydrogen concentration of the second region.

Thin film transistor

A recording-medium-type setting unit selects a type of a recording medium to be analyzed on the basis of information input with an input unit. A threshold-value setting unit sets a threshold value on which the determination of whether the calculation result is output in a file is based for each recording medium type selected by the recording-medium-type setting unit. An amount-of-variation calculating unit calculates the reaction force for every time step, stores the reaction force in the current time step in time integration in a RAM during the calculation, and monitors the amount of variation in the reaction force between each time step and the next time step. A file-output controlling unit calculates the difference between the reaction force stored by the amount-of-variation calculating unit and the reaction force in the current time step and, if the difference is larger than the threshold value, performs file output.

Analysis apparatus and analysis method

A glass composition for ultraviolet light is provided. The glass composition for ultraviolet light contains Lu, Si, and O in an amount of 99.99 weight % or more in total. The glass composition contains Lu in an amount of 26% or more and 39% or less in cation percent and Si in an amount of 61% or more and 74% or less in cation percent.

Glass composition for ultraviolet light and optical device using the same

An optical glass that contains Si, Al, Mg, and O is provided. The optical glass contains Si in an amount of 40% or more and 60% or less, in cation percent, Al in an amount of 10% or more and 35% or less, in cation percent, and Mg in an amount of 20% or more and 35% or less, in cation percent. In the optical glass, the total amount of Si, Al, and Mg is 99.5% or more, in cation percent. Furthermore, the optical glass contains Fe and Na each in an amount of 0.01 wtppm or less and has a transmittance to a light having a wavelength of 248 nm of 40% or more at a thickness of 5 mm.

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Yokohama, Japan

Tomohiro Watanabe