Sony Corporation

Sony Semiconductor Solutions Corporation

Tomohiro Wada

Makoto Hashimoto

Kazunori Kataoka

Shingo Makimura

Yoshiro Okawa

Takusei Sato

Satoshi Keino

Shunsuke Ishii

Fumiaki Abe

There is provided an imaging device including a semiconductor having a light-receiving portion that performs photoelectric conversion of incident light, electrically conductive wirings, and a contact group including contacts that have different sizes and connect the semiconductor and the electrically conductive wirings.

Imaging device, imaging apparatus, production apparatus and method, and semiconductor device

A display device able to raise a light resistance of pixel transistors without depending upon a light shielding structure and a method of production of same, wherein an average crystal grain size of a polycrystalline silicon filmforming an active layer of the pixel transistors is controlled to be relatively small so as to suppress a photo-leakage current. The smaller the crystal grain size, the larger the included crystal defects. Carriers excited by light irradiation are smoothly captured by a defect level, and an increase of a photo-leakage current is suppressed. On the other hand, the average crystal grain size of the polycrystalline silicon filmconstituting the peripheral transistors is controlled so as to become relatively large. The larger the crystal grain size, the larger the mobility of the carriers, and the higher the drivability of the peripheral transistors. This is because a higher speed operation is required for the peripheral transistors than the pixel transistors due to scanning of pixels and sampling of image signals.

Display device, method of production of the same, and projection type display device

A liquid crystal display device having a thin-film transistor formed on a substrate for driving an pixel electrode comprises a holding capacitor line underlying a thin-film semiconductor layer which forms the thin-film transistor, and a first holding capacitor dielectric film formed between the holding capacitor line and the thin-film semiconductor layer, a first holding capacitor element being made up of the thin-film semiconductor layer and the holding capacitor line interposing the first holding capacitor dielectric film therebetween. And a manufacturing method of above liquid crystal display device comprises the steps of forming the holding capacitor line on said substrate, forming the first holding capacitor dielectric film on the holding capacitor line, forming the thin-film semiconductor layer constituting the thin film transistor on the first holding capacitor dielectric film so that the holding capacitor line and the thin-film semiconductor layer interposing the first holding capacitor dielectric film therebetween make up the first holding capacitor element.

Liquid crystal display device and its manufacturing method

A TFT substrate is provided near its outer periphery with a metallic wiring and pad portions, and a conductive light-shielding film is provided on the outside of these. The conductive light-shielding film is left annularly along the outer peripheral portion of the TFT substrate so that, when an upper layer light-shielding film is formed on the TFT substrate, the upper layer light-shielding film on the scribed line side would not easily be exfoliated at the time of etching or cleaning. Of the conductive light-shielding film, the position of the conductive light-shielding film disposed on the outside of the pad portions is shifted to the outer side so that the spacing between the conductive light-shielding film and the pad portions is set to be, for example, not less than 10 &mgr;m. By this, electrostatic trouble between the conductive light-shielding film and the pad portions is restrained.

Growing community of inventors

Kumamoto, Japan

Tomohiro Wada