Tanaka Kikinzoku Kogyo K.k.

Tomohiro Tsugawa

Ryosuke Harada

Seung-Joon Lee

Toshiyuki Shigetomi

Shigeyuki Ootake

Teruhisa Iwai

Ketan Baban Katkar

A raw material for chemical deposition for producing a manganese thin film or a manganese compound thin film by chemical deposition method, including an organomanganese compound represented Chemical Formula 1 in which a cyclopentadienyl ligand and an isocyanide ligand are coordinated to manganese, which has basic characteristics as a raw material for chemical deposition and enables formation of a manganese thin film with a reducing gas such as hydrogen used as a reaction gas.

Chemical vapor deposition method using an organomanganese compound as a starting material

The present invention relates to a raw material of an organoruthenium compound for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method. This organoruthenium compound is an organoruthenium compound represented by the following Formula 1 and including a trimethylenemethane-based ligand (L) and three carbonyl ligands coordinated to divalent ruthenium. In Formula 1, the trimethylenemethane-based ligand Lis represented by the following Formula 2:

Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition

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Tsukuba, Japan

Tomohiro Tsugawa