Kabushiki Kaisha Toshiba

Canon Medical Systems Corporation

Tomohiro Takase

Ikuo Uematsu

Ichiro Tono

Kayoko Oomiya

Isao Nawata

Shingo Kasai

Shinji Saito

Rei Hashimoto

Tsutomu Kakuno

Kei Kaneko

Yuichiro Yamamoto

Tsutomu Honjoh

Yuriko Oyama

Mie Matsuo

Shoichi Kanayama

Hideo Eto

Motoji Haragashira

Takeshi Yamauchi

Isamu Nitta

Masaaki Hirakawa

Masami Hirata

Takaaki Wada

Tadahiro Nakayama

Kenichi Uchiyama

Isao Kishimoto

Mika Fujii

Masanori Sugitani

A quantum cascade laser of an embodiment includes a semiconductor stacked body in which a ridge waveguide is provided. The semiconductor stacked body includes an active layer including a quantum well region including a layer including Al; and the active layer emits laser light. The layer that includes Al includes first regions, and a second region interposed between the first regions; the first region includes Al oxide and reaches a prescribed depth inward from an outer edge of the active layer along a direction parallel to a surface of the active layer in a cross section orthogonal to the optical axis; and the second region does not include Al oxide.

Quantum cascade laser and method for manufacturing same

A semiconductor laser wafer includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and a composition evaluation layer. The active layer is provided on the first semiconductor layer; multiple periods of pairs of a light-emitting multi-quantum well region and an injection multi-quantum well region are stacked in the active layer; the light-emitting multi-quantum well region is made of a first compound semiconductor and a second compound semiconductor. The second semiconductor layer is provided on the active layer. The composition evaluation layer is provided above the active layer and includes a first film and a second film; the first film is made of the first compound semiconductor and has a first thickness; and the second film is made of the second compound semiconductor and has a second thickness.

Semiconductor laser wafer and semiconductor laser

A surface-emitting quantum cascade laser of an embodiment comprises a substrate, an active layer, and a photonic crystal layer. The active layer has optical nonlinearity, and is capable of emitting a first and a second infrared laser light. The photonic crystal layer includes a first and a second region. The rectangular grating of the first region is orthogonal to the rectangular grating of the second region. The first infrared laser light has a wavelength corresponding to a maximum gain outside a first photonic bandgap in a direction parallel to a first side of two sides constituting the rectangular grating. The second infrared laser light has a wavelength corresponding to a maximum gain outside a second photonic bandgap in a direction parallel to a second side of the two sides of the rectangular grating.

Surface-emitting quantum cascade laser

A according to one embodiment, an optical measurement system has an optical waveguide sensor chip mounted thereon, the optical waveguide sensor chip has a space defined by a plurality of surfaces including a first surface along which an optical waveguide part is provided. The optical measurement system includes a holding surface, a light transceiver, and a contact sensor. The holding surface holds the bottom surface of the optical waveguide sensor chip. The light transceiver lets light be incident on the optical waveguide sensor chip through a first window in the holding surface, and receives light that has passed through the first surface via the optical waveguide part from a second window in the holding surface. The contact sensor detects contact state in two or more detection positions located along an array direction of the first window and the second window.

Optical measurement system

A surface-emitting quantum cascade laser of an embodiment includes a semiconductor stacked body, an upper electrode, and a lower electrode. The semiconductor stacked body includes an active layer that includes a quantum well layer and emits infrared laser light, a first semiconductor layer that includes a photonic crystal layer in which pit parts constitute a rectangular grating, and a second semiconductor layer. The upper electrode is provided on the first semiconductor layer. The lower electrode is provided on a lower surface of a region of the second semiconductor layer overlapping at least the upper electrode. The photonic crystal layer is provided on the upper surface side of the first semiconductor layer. In plan view, the semiconductor stacked body includes a surface-emitting region including the photonic crystal layer and a current injection region. The upper electrode is provided on the current injection region.

According to one embodiment, a measuring system using an optical waveguide is provided. The measuring system has an optical waveguide, magnetic fine particles, a magnetic field applying unit, a light source and a light receiving element. The optical waveguide has a sensing area to which first substances having a property of specifically bonding to subject substances to be measured are fixed. Second substances having a property of specifically bonding to the subject substances are fixed to the magnetic fine particle. The magnetic field applying unit generates a magnetic field for moving the magnetic fine particles. The light source inputs a light into the optical waveguide. The light receiving element receives the light output from the optical waveguide.

Measuring system using optical waveguide, measuring device, measuring method, optical waveguide type sensor chip, and magnetic fine particle

An optical-waveguide sensor chip includes an optical waveguide having a first substance immobilized on the surface thereof, the first substance being specifically reactive with an analyte substance, and fine particles dispersed on the optical waveguide and having a second substance immobilized on the surface thereof, the second substance being specifically reactive with the analyte substance.

Optical-waveguide sensor chip, method of manufacturing the same, method of measuring substance, substance-measuring kit and optical-waveguide sensor

According to one embodiment, an optical waveguide sensor chip includes an optical waveguide layer; a pair of optical elements disposed at both ends of the optical waveguide layer so that light enters the optical waveguide layer and the light exits from the optical waveguide layer; a functional film formed on a predetermined region of the optical waveguide layer; a covering layer formed in a planar region on the light entrance surface of the optical waveguide layer, in which at least the optical elements are disposed; a first through hole configured to allow the light entering the entrance-side optical element to pass therethrough; and a second through hole configured to allow the light exiting from the exit-side optical element to pass therethrough.

Optical waveguide sensor chip, optical waveguide sensor, and method for manufacturing optical waveguide sensor chip

An optical sensor () includes a sensor chip member () having an optical waveguide layer (), a combination of an incidence end grating () and an output end grating () spaced from each other, in contact with the optical waveguide layer (), and a reaction reagent () provided on the optical waveguide layer () to detect as an optical change a quantity of measurement object interposed between the incidence end grating () and the output end grating (), and a chamber member () to have, when the sensor chip member () is assembled, a facing surface (F) in position facing the optical waveguide layer (), and a gap (I) defined between the optical waveguide layer () and the facing surface (F), the reaction reagent () being disposed in the gap (I).

Optical sensor

A measuring apparatus uses a biological component sensor including a plate-shaped sensor chip having a biological component sensing function and a sensor chip holding frame surrounding and holding the sensor chip. The biological component sensor is disposed in a measuring apparatus main body housing. A fixed engaging member and movable engaging member disposed on a sensor chip support table fixed to the measuring apparatus main body housing fix and support the sensor chip holding frame, and the sensor chip can be thus replaced. The biological component sensor contacts a forearm portion of a human body, and a biological component exuded from a contact part of the forearm portion is caused to contact the sensor chip to change a physical or chemical surface property of the sensor chip, thereby measuring the change through an irradiation of an inspection light to calculate concentration of the biological component.

Biological component measuring apparatus and method

The method for measuring the concentration of the measuring object uses a sensor chip comprising an optical waveguide layer and an antibody immobilized layer formed on the surface of the optical waveguide layer, which comprises immobilizing the measuring object and an enzyme-labeled antibody labeled with a labeling enzyme on the antibody immobilized layer of the sensor chip having an immobilized antibody, producing a color-developing and precipitating enzyme reaction product by allowing to react a coloring reagent with the labeling enzyme on the antibody immobilized layer to precipitate the enzyme reaction product on the antibody immobilized layer, allowing to totally reflect a light impinged on the sensor chip from the outside at an interface between the optical waveguide layer and the antibody immobilized layer, and observing to a physical value of the totally reflected light.

Concentration measuring method, concentration measuring kit, and sensor chip for use in the method

An optical waveguide type biochemical sensor chip includes a light beam transmittable substrate having at least a first optical element that allows light beam to be impinged to the inside and a second optical element that emits light beam from the inside, an optical waveguide layer that is formed on a main surface of the substrate on which at least one of the first and second optical elements is formed, has a thickness of 3 to 300 &#x3bc;m and is made of a polymer resin material having a higher refractive index than that of the substrate material, and a sensing membrane that is formed on the optical waveguide layer and creates a reaction product having the ability of absorbing the light beam or an evanescent wave of the light beam in response to an introduced specimen.

Optical waveguide type biochemical sensor chip and method of manufacturing the same

A solid-state laser comprises an excitation light source having a semiconductor laser array, a plurality of chopper circuits arranged between a direct-current power supply and an output terminal of the semiconductor laser array and connected in parallel with each other, for applying resultant power of the chopper circuits to the semiconductor laser array, a current controller for controlling the plurality of chopper circuits to modulate the resultant power at time resolution ranging from 1 &mgr;s to 100 &mgr;s, a solid-laser medium excited by a laser beam emitted from the semiconductor laser array, and a pair of mirrors for resonating a laser beam generated by exciting the solid-state medium.

Power supply unit for solid-state laser, solid state laser, and laser beam generator

A laser rod is provided in a first tube through which a cooling medium flows. The laser rod is pumped by a semiconductor laser around and outside the first tube. A laser beam entering from the semiconductor laser into the first tube is diffused by diffusion means before being incident on the laser rod. The diffusion mean is set in a cooling medium in the first tube, so that the laser beam entering into the diffusion means have their reflection component decreased and their refraction component increased.

Growing community of inventors

Sagamihara, Japan

Tomohiro Takase