Sumitomo Chemical Company, Limited

Panasonic Corporation

Joled Inc.

Tomohiro Shiraki

Shuhei Nakatani

Kei Sakanoue

Seiji Shinkai

Hidenobu Kakimoto

Osamu Goto

Shuichi Haraguchi

Masashi Ogawa

A problem of the present invention is to prevent a base layer beneath the layer to be irradiated with light from deterioration in property and a functional thin film from deterioration in property as the fine patterning of a functional film is performed with light irradiation. Means for solving the problem is a compound obtained by dimerizing with light irradiation a compound (A) containing a group that has photosensitivity and can be photodimerized and a group having lyophilicity and a compound (B) containing a group that has photosensitivity and can be photodimerized and a group having liquid-repellency.

Compound obtained by dimerizing with light irradiation, a compound containing a group having lyophilicity, and a compound containing a group having liquid-repellency

A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and a &#x3c0;-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.

Device, thin film transistor, method for manufacturing the device and method for manufacturing the thin film transistor

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Champaign, IL, United States of America

Tomohiro Shiraki