Hitachi-high-technologies Corporation

Mitsubishi Jidosha Kogyo Kabushiki Kaisha

Tomohiro Ohashi

Katsunori Ueda

Kenji Goto

Nobuaki Murakami

Takashi Kawabe

Satoshi Yoshikawa

Hideyuki Oda

Kazuyoshi Nakane

Shigeo Yamamoto

Jyun Takemura

Eiichi Hiruma

Akitaka Makino

Hiroho Kitada

Kohei Sato

Yasuki Tamura

Hideki Kihara

Kojiro Okada

Kazuo Koga

Tomoyuki Tamura

Muneo Furuse

Michiaki Kobayashi

Tsutomu Nakamura

Hidenobu Tanimura

Yuya Mizobe

Naoto Yamada

A plasma processing apparatus is provided which includes a processing chamber disposed in a vacuum container, in a decompressed inside of which plasma is formed, a sample stage disposed in a lower part of the processing chamber, on a top surface of which a sample is mounted, a dielectric film made of a dielectric that forms a mounting surface on which the sample is mounted, and electrodes arranged inside the dielectric film and supplied with power for chucking and holding the sample onto the dielectric film, and when the sample is mounted on the sample stage, the sample is kept mounted on the sample stage until a sample temperature becomes a predetermined temperature or until a predetermined time elapses, and power is then supplied to the electrodes to chuck the sample to the sample stage and then start processing on the sample using the plasma.

Plasma processing apparatus and plasma processing method

A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.

Wafer processing based on sensor detection and system learning

A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.

A vacuum chamber includes: a vacuum vessel arranged at the backward side, where a wafer of a processing subject is processed inside an internal processing chamber; a transfer chamber arranged at the forward side, where said wafer is transferred at the inside thereof under atmospheric pressure; a cassette stage arranged at the forward of this transfer chamber, where a cassette storing said wafer is mounted; a lock chamber connected with said transfer chamber at the backward of said transfer chamber; a robot arranged inside said transfer chamber, where said wafer is transferred between said cassette and said lock chamber; and an aligning machine for making position of said wafer fit with the predetermined position, wherein the wafer is transferred to said lock chamber, after performing alignment of said wafer on said aligning machine, in the case where displacement amount of position of this wafer is larger than the predetermined value.

Vacuum chamber

An exhaust passage ( ) of an internal-combustion engine ( ) is provided with an exhaust emission control unit ( ) capable of reducing harmful substances in exhaust gas under a given exhaust pressure condition and an exhaust sensor ( ) for detecting the concentration of a specific exhaust component (H , O ) in the exhaust gas, and a performance lowering identifying unit identifies lowering of the performance of the exhaust emission control ( ) by detecting a failure to fulfill the given exhaust pressure condition in accordance with the output of the exhaust sensor.

Exhaust gas purifier for internal combustion engines

An intake system construction for an internal combustion engine includes a combustion chamber formed with upper and lower extremities thereof defined by a lower wall of a cylinder head and a top wall of a piston, an intake open end formed in the lower wall in opposition to the combustion chamber on one side of a reference plane which contains a central axis of the cylinder, an intake port formed in communication with the combustion chamber via the intake open end and extending upwardly from the intake open end so that a vertical swirl of inducted air is formed in the combustion chamber, an intake valve having a head portion for opening or closing the intake open end and a stem portion extending from the head portion to an upstream side of the intake port through the cylinder head, and a straightening member arranged in the intake port on a downstream side of the stem portion so that an inducted air flow is straightened on the downstream side of the stem portion.

Intake system construction for internal combustion engine and

An intake system construction according to the present invention for an internal combustion engine is provided with a combustion chamber formed with upper and lower extremities thereof defined by a cylinder head and a piston, an intake open end arranged for being opened or closed by an intake valve, an exhaust open end arranged for being opened or closed by an exhaust valve, an intake port formed extending upwardly from the intake open end so that a vertical swirl of inducted air is formed in the combustion chamber, and an exhaust port for discharging combustion gas from the combustion chamber. The intake port is formed wider in one of halves thereof located adjacent a reference plane, which contains a central axis of a cylinder, than in the other half thereof located remote from the reference plane. The intake port is provided at a lower extremity thereof in the one half thereof with a raised portion for guiding an inducted air flow in the intake port toward an inner peripheral surface of a side wall of the cylinder.

Growing community of inventors

Shunan, Japan

Tomohiro Ohashi