Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Synztec Co., Ltd.

Tomohiro Murata

Tsuyoshi Tanaka

Yasuhiro Uemoto

Yutaka Hirose

Daisuke Ueda

Tetsuzo Ueda

Kaoru Inoue

Junji Sato

Hidekuni Yomo

Hidetoshi Ishida

Yoshito Ikeda

Hiroaki Ueno

Takeshi Fukuda

Masayuki Kuroda

Atsuhiko Kanda

Hiroshi Ogura

Yuka Moriyasu

An object detection apparatus in a vehicle is provided. The object detection apparatus includes one or more sensors configured to detect at least one object located on at least three rows of seats in the vehicle, the one or more sensors being positioned on a ceiling of the vehicle. The object detection apparatus further includes a circuit configured to determine whether or not the at least one object detected is a living-object. A number of the one or more sensors is less than a number of the at least three rows of seats.

Radar apparatus and vehicle

A radar apparatus includes an antenna configured to radiate a first electromagnetic wave in a first radiation angle range including a first direction and radiates a second electromagnetic wave in a second radiation angle range including a second direction opposite to the first direction, and a circuit configured to detect a target in each of the first direction and the second direction on the basis of a first reflected signal of the first electromagnetic wave and a second reflected signal of the second electromagnetic wave, which are received by the antenna.

An antenna device includes: a first sub-array antenna provided on a substrate and having a group of first antenna elements, one or more third antenna elements, and a first electrical power line through which electric power is supplied to the group of first antenna elements and the one or more third antenna elements; and a second sub-array antenna provided on the substrate and having a group of second antenna elements, the one or more third antenna elements, and a second electrical power line through which electric power is supplied to the group of second antenna elements and the one or more third antenna elements. The one or more third antenna elements are placed away from the first electrical power line and the second electrical power line.

Antenna device

An antenna substrate, provided with: a substrate, a ground electrode, a first antenna element, a second antenna element, a first transmission line and a second transmission line. The first antenna element that is arranged at a first distance away from the ground electrode, on the substrate within the first opening area. The second antenna element that is arranged at a second distance away from the ground electrode, on the substrate within the second opening area. The first distance is a shortest distance between the ground electrode and the first antenna element in a direction along a plane along which an electric field among an electromagnetic wave radiated from the first antenna element vibrates. The second distance is a shortest distance between the ground electrode and the second antenna element in a direction along a plane along which an electric field among an electromagnetic wave radiated from the second antenna element vibrates. The first distance is different from the second distance.

Antenna substrate

A charge roller in an image-forming apparatus of a DC electrification mode mitigates occurrence of black lines and prevents fogging. The charge roller has a core, an elastic layer on the core, and a surface treatment layer on the surface of the elastic layer. The elastic layer is a vulcanized rubber composition containing a rubber base mainly containing an epichlorohydrin-based rubber, and additives including a conductivity-imparting agent, an inorganic filler, a vulcanization accelerator, and a vulcanizing agent. The ratio of the conductivity-imparting agent and the inorganic filler, to the entire rubber composition, is 11 mass % or less. The surface treatment layer is formed by impregnating the elastic layer with a surface treatment liquid prepared by dissolving an isocyanate compound in an organic solvent. The roller has a roller surface roughness Rz of 10 &#x3bc;m or less.

Charge roller

A board connection structure includes an opening, which is formed at a perimeter of a waveguide in a first board, and an opening, which is formed at a perimeter of a waveguide in a second board. The openings are connected to each other. The first board and the second board are connected with an insulation film disposed therebetween. The insulation film has a thickness of 60% or less of a waveguide width that determines a propagation mode in at least one of the waveguide in the first board and the waveguide in the second board.

Board connection structure

A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.

Method for manufacturing a semiconductor device having a III-V nitride semiconductor

A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

Semiconductor device

A semiconductor device includes: a first semiconductor layer which is made of a first group III nitride semiconductor; a cap layer which is formed on the first semiconductor layer, which is made of a second group III nitride semiconductor, and which has an opening for exposing the first semiconductor layer; and a source electrode and a drain electrode which are formed on the cap layer so as to oppose to each other with the opening interposed. A gate electrode is formed on the bottom face of the opening with an insulating film interposed. The insulating film is formed on at least a part of the first semiconductor layer which is exposed through the opening.

Group III-nitride semiconductor device with a cap layer

A semiconductor device comprises an active layer formed on a substrate, a superlattice layer formed on the active layer, and an ohmic electrode formed on the superlattice layer. In the superlattice layer, a first thin film and a second thin film are alternately laminated. The second thin film is made of a semiconductor which has polarization characteristics different from those of the first thin film and a band gap larger than that of the first thin film. An interface region between an upper surface of the first thin film and a lower surface of the second thin film or an interface region between a lower surface of the first thin film and an upper surface of the second thin film, is doped with an impurity.

A semiconductor device has: a buffer layer formed on a conductive substrate and made of AlGaN with a high resistance; an element-forming layer formed on the buffer layer, having a channel layer, and made of undoped GaN and N-type AlGaN; and a source electrode, a drain electrode and a gate electrode which are selectively formed on the element-forming layer. The source electrode is filled in a through hole provided in the buffer layer and the element-forming layer, and is thus electrically connected to the conductive substrate.

Semiconductor device including a group III-V nitride semiconductor

A semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having such a composition as to generate a 2-dimensional electron gas layer in the upper portion of the first nitride semiconductor layer, and an electrode having an ohmic property and formed selectively on the second nitride semiconductor layer. The second nitride semiconductor layer includes a contact area having at least one inclined portion with a bottom or wall surface thereof being inclined toward the upper surface of the first nitride semiconductor layer and defining a depressed cross-sectional configuration. The electrode is formed on the contact area.

Semiconductor device and method for fabricating the same

A semiconductor device has a sapphire substrate, a semiconductor layer made of GaN provided on the sapphire substrate, a multilayer film provided on the semiconductor layer, and an electrode in ohmic contact with the multilayer film. The multilayer film has been formed by alternately stacking two types of semiconductor layers having different amounts of piezopolarization or different amounts of spontaneous polarization and each containing an n-type impurity so that electrons are induced at the interface between the two types of semiconductor layers. This allows the contact resistance between the electrode and the multilayer film and a parasitic resistance in a current transmission path to be reduced to values lower than in a conventional semiconductor device.

Growing community of inventors

Osaka, Japan

Tomohiro Murata