Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Tomohiro Mimura

Narumasa Soejima

Masahiro Sugimoto

Takashi Kanemura

Yukihiko Watanabe

Sachiko Aoi

Hidefumi Takaya

Shoji Mizuno

Shinichiro Miyahara

Tsuyoshi Ishikawa

Shuhei Mitani

Aiko Kaji

Haruhito Ichikawa

Yukihiro Wakasugi

Hisashi Ishimabushi

A method for manufacturing a semiconductor device includes: forming an insulating film on a surface of a semiconductor layer of a semiconductor substrate; forming a contact hole in the insulating film; forming a conductor material on the insulating film to be in contact with the semiconductor layer through the contact hole; and patterning the conductor material using an alignment key included in the conductor material.

Method for manufacturing semiconductor device

A semiconductor device includes: a drain region; a drift layer made of a first conductivity type semiconductor with lower impurity concentration than the drain region; a base region made of a second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity type semiconductor with higher concentration; a trench structure having a first gate insulation film and a first gate electrode arranged at an opening side of the trench and to be deeper than the base region, and a bottom part insulation film; a source electrode electrically connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The drain is arranged to be deeper than the base region. The first gate insulation film is made of higher dielectric insulation material than the bottom part insulation film.

Semiconductor device

A semiconductor device includes: a drain region made of a first or second conductivity type semiconductors; a drift layer made of the first conductivity type semiconductor; a base region made of the second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity semiconductor with higher concentration; a trench gate structure having upper and lower gate structures; a source electrode connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The upper gate structure is inside the trench at an upper side, and includes a first gate insulation film and a first gate electrode. The lower gate structure is inside the trench at a lower side, and includes a second gate insulation film made of higher dielectric insulation material and a second gate electrode.

In a semiconductor substrate preparation step, a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed is prepared. In a second semiconductor region forming step, a second semiconductor region is formed by implanting an impurity of a second conductivity type into a first semiconductor region through multiple ion implantation steps while varying implantation depths of the respective multiple ion implantation steps. In the second semiconductor region forming step, a dose amount of the impurity when an implantation energy of multiple ion implantation steps is the largest is smaller than a dose amount of impurity when the implantation energy is not the largest.

Semiconductor device and method of manufacturing the same

An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region.

Silicon carbide semiconductor device and manufacturing method of the same

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Kariya, Japan

Tomohiro Mimura