Mitsubishi Electric Corporation

Tomohiro Maegawa

Daisuke Fujisawa

Shimpei Ogawa

Yutaka Yoneda

Akihiro Matsusue

Hiroshi Hirosaki

Kento Mori

An optical sensor module comprises a substrate, a photodetector which detects light and is fixed to the substrate and a lens holding member, to which a lens is fixed, which is fixed to the substrate at a position surrounding the photodetector, and the lens is fixed in the state in which an outer circumference of the lens is covered by a material itself of the lens holding member, and a part of an outer edge of the lens is exposed at a side of an outer surface of the lens holding member or at a side of an inner surface of the lens holding member.

Optical sensor module and manufacturing method thereof

A device () is formed on a main surface of a semiconductor substrate (). A passivation film () covers the main surface. A metallized pattern () is formed on the passivation film () and surrounds the device (). A sealing metal layer () is formed on the metallized pattern () and includes a corner portion () in a planar view. A lid () is bonded to the metallized pattern () with the sealing metal layer () interposed therebetween and vacuum-seals the device (). A dummy wiring () is softer than the metallized pattern (), is formed at least between an outer portion of the corner portion of the sealing metal layer () and the semiconductor substrate (), and does not electrically connected to the device ().

Semiconductor package

A thermal infrared imaging element includes: a pixel array unit () that includes a plurality of temperature detection pixels () each of which includes a diode () and generates an electric signal in accordance with infrared rays received from an outside, the temperature detection pixels being arrayed in a two-dimensional fashion in a row and column directions; a plurality of drive lines () that are provided in rows and that commonly connect one ends of the temperature detection pixels () in units of the rows; a plurality of signal lines () that are provided in columns and that commonly connect the other ends of the temperature detection pixels () in units of the columns; a vertical scanning circuit () that sequentially selects the drive lines; a signal line selection circuit () that sequentially selects the signal lines; and one or more read circuits () that amplify an electric signal from a temperature detection pixel connected to both one of the drive lines which is selected by the vertical scanning circuit and one of the signal lines which is selected by the signal line selection circuit. The number of the read circuits () is smaller than the number of the signal lines provided in the respective columns.

Infrared imaging element comprising temperature detection pixels, drive lines, signal lines, vertical scanning circuit, signal line selection circuit, and one or more read circuits, and air conditioner equipped with the same

An infrared imaging device comprises an infrared imaging sensor to detect infrared light as heat, a temperature drift compensation amount calculator to calculate a temperature drift compensation amount in accordance with a temperature change of the substrate, with respect to a pixel output outputted from each of the plurality of pixels, a compensation amount calculation function generator to generate a function with the temperature of the substrate as an independent variable; and a timing controller to cause the infrared imaging sensor and the substrate temperature sensor to synchronously output data to the compensation amount calculation function generator for generating the function, wherein the compensation amount calculation function generator uses the data for generation output after the generation of the function as additional data for improving accuracy of the function.

Infrared imaging device

This infrared imaging element includes: a substrate which has a front surface and a back surface and to which a circuit unit is provided; a support leg wiring line that is disposed above the front surface of the substrate; and an infrared-ray detection unit which is held on the support leg wiring line and to which a diode electrically connected to the circuit unit via the support leg wiring line is provided, wherein the temperature change of the infrared-ray detection unit is detected as an electrical signal change of the diode by the circuit unit. The substrate, the support leg wiring line, and the infrared-ray detection unit are laminated at intervals in a direction perpendicular to the front surface of the substrate.

Infrared imaging element, infrared imaging array, and method for manufacturing infrared imaging element

An infrared imaging element includes a photosensitive pixel array and a driving line for each photosensitive pixel. The infrared imaging element includes a vertical scanning circuit, a signal line, a bias line, a differential integration circuit that time-integrates a difference between a voltage across the first constant current source and a voltage across the second constant current source; a horizontal scanning circuit; a reference pixel array that outputs a reference signal changing in accordance with a change in a temperature of photosensitive pixels; a bias generating circuit that generates a bias voltage for applying the bias voltage to the bias line, the bias voltage corresponding to a difference between a reference voltage and a differential signal between the reference signal and a voltage on the bias line; and a voltage generating circuit that generates a temperature signal generation voltage based on the bias voltage.

Infrared imaging element detecting temperature change, and infrared camera using the same element

An electromagnetic wave detector that detects incident light by converting the incident light into an electric signal includes a flat metal layer formed on a supporting substrate, an intermediate layer formed on the metal layer, a graphene layer formed on the intermediate layer, isolated metals periodically formed on the graphene layer, and electrodes arranged oppositely on both sides of the isolated metals. Depending on a size of a planar shape of each of the isolated metals, light having a predetermined wavelength at which surface plasmon occurs is determined out of the incident light, and the light having the predetermined wavelength is absorbed to detect a change in the electric signal generated in the graphene layer.

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Chiyoda-ku, Japan

Tomohiro Maegawa