Mitsubishi Chemical Corporation

Tomohiro Kyotani

Takeshi Sawai

Naoko Sumitani

Tomohiro Kato

Eiji Dejima

An object of the present invention is to provide a silica particle having excellent polishing characteristics and storage stability. The present invention relates to a silica particle in which a proportion of silanol groups present on a surface represented by (x/y)×100% is 15% or less, where a content of silanol groups on the surface is x mass % and a content of bulk silanol groups is y mass %.

Silica particle and production method therefor, silica sol, polishing composition, polishing method, method for producing semiconductor wafer and method for producing semiconductor device

An object of the present invention is to provide a silica particle having excellent polishing characteristics and storage stability, a method for producing the silica particle, a silica sol containing the silica particles, and a polishing composition containing the silica sol. Another object of the present invention is to provide a polishing method, a method for producing a semiconductor wafer, and a method for producing a semiconductor device, which are excellent in productivity of an object to be polished. The silica particle in the present invention satisfies formula (1): y≥4.2 where a d value measured by wide-angle X-ray scattering is y Å.

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Tokyo, Japan

Tomohiro Kyotani