Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Skyworks Filter Solutions Japan Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Skyworks Panasonic Filter Solutions Japan Co., Ltd.

Tomohiro Iwasaki

Keiji Onishi

Hiroyuki Nakamura

Hiroshi Nakatsuka

Takehiko Yamakawa

Tomohide Kamiyama

Kunihiko Nakamura

Masahiro Yasumi

Kazunori Nishimura

Tomoya Komatsu

Toru Yamaji

Shoji Okamoto

Mitsunori Miyanari

Shigeru Tsuzuki

Naohiro Tsurumi

Tetsuo Kawasaki

A surface acoustic wave device comprises a substrate and an interdigital transducer (IDT) electrode disposed on the substrate. The IDT electrode includes a lower electrode layer having a lower surface in contact with an upper surface of the substrate and an upper electrode layer having a lower surface defining a base in contact with an upper surface of the lower electrode layer. Side surfaces of the lower electrode layer are substantially perpendicular to the upper surface of the substrate. Side surfaces of the upper electrode layer are disposed at an acute angle relative to the upper surface of the substrate.

Acoustic wave device including multi-layer interdigital transducer electrodes

An acoustic wave device comprises an IDT electrode disposed above an upper surface of a piezoelectric substrate and includes a plurality of electrode fingers configured to excite a main acoustic wave. A first dielectric film made of an oxide is disposed above the upper surface of the piezoelectric substrate and covers the plurality of electrode fingers. A second dielectric film made of non-oxide is disposed between the first dielectric film and each of the plurality of electrode fingers. A third dielectric film is disposed between the piezoelectric substrate and the plurality of electrode fingers. A speed of a transverse wave propagating through the third dielectric film is greater than a speed of the main acoustic wave propagating through the piezoelectric substrate. The third dielectric film contacts the first dielectric film between adjacent electrode fingers of the plurality of electrode fingers.

Acoustic wave device including multiple dielectric films

A method of manufacturing an acoustic wave element includes simultaneously forming a plurality of electrodes on a piezoelectric substrate, the plurality of electrodes including first and second IDT electrodes and a connection electrode, forming an insulation over the plurality of electrodes and the piezoelectric substrate, the insulation having a first thickness in a direction perpendicular to the surface of the piezoelectric substrate over the second IDT electrode, processing a first portion of the insulation over the first IDT electrode and a second portion of the insulation over the connection electrode to reduce a thickness of the first and second portions of the insulation to a second thickness, and processing a third portion of the insulation over the surface of the second IDT electrode to reduce the first thickness of the third portion to a third thickness, the third thickness being greater than the second thickness.

Method of manufacturing an acoustic wave element

An acoustic wave element () according to certain examples includes a piezoelectric body (), an interdigital transducer (IDT) electrode () disposed above the piezoelectric body (), and a connection electrode () disposed above the piezoelectric body () and connected to the IDT electrode (). A first insulation layer () covers the connection electrode (), and a second insulation layer () covers the IDT electrode (). The first insulation layer () disposed above the connection electrode () has a first thickness T in a direction perpendicular to an upper surface of the piezoelectric body () and the second insulation layer () disposed above the IDT electrode () has a second thickness K in the direction perpendicular to the upper surface of the piezoelectric body (). The first thickness T is less than the second thickness K based on FIG.C and the relevant description.

Acoustic wave elements, antenna duplexers, modules and electronic devices using the same

An acoustic wave element according to certain examples includes a piezoelectric body, an interdigital transducer (IDT) electrode disposed above the piezoelectric body, and a connection electrode disposed above the piezoelectric body and connected to the IDT electrode. A first insulation layer covers the connection electrode, and a second insulation layer covers the IDT electrode. The first insulation layer disposed above the connection electrode has a first thickness T in a direction perpendicular to an upper surface of the piezoelectric body and the second insulation layer disposed above the IDT electrode has a second thickness K in the direction perpendicular to the upper surface of the piezoelectric body. The first thickness T is less than the second thickness K.

Acoustic wave elements and antenna duplexers, and modules and electronic devices using same

An acoustic wave element includes a piezoelectric substrate, an excitation electrode configured to excite and output a main acoustic wave on the piezoelectric substrate, a receiving electrode configured to receive the main acoustic wave, a propagation path configured to allow the main acoustic wave to propagate along the piezoelectric substrate between the excitation electrode and the receiving electrode, and a sensing portion configured to react to an object substance. The propagation path is configured to allow the main acoustic wave to pass plural times through the sensing portion along the propagation path. This acoustic wave element has high sensitivity to the object substance.

Elastic wave element and elastic wave sensor using same

An acoustic wave device includes a piezoelectric substrate, an IDT electrode including plural electrode fingers disposed above an upper surface of the piezoelectric substrate, a first dielectric film made of oxide disposed above the upper surface of the substrate for covering the electrode fingers, and a second dielectric film made of non-oxide disposed on upper surfaces of the electrode fingers and between the first dielectric film and each of the electrode fingers. The first dielectric film contacts the upper surface of the piezoelectric substrate at a position between electrode fingers out of the plural electrode fingers adjacent to each other. The acoustic wave device prevents the electrode fingers of the IDT electrode from corrosion.

Acoustic wave device and electronic apparatus including same

An acoustic wave sensor includes a piezoelectric substrate, a transmitting electrode configured to excite a main acoustic wave propagating through a propagation region of an upper surface of the piezoelectric substrate, a receiving electrode configured to receive the propagated main acoustic wave, a first insulating film provided on the propagation region of the upper surface of the piezoelectric substrate, a second insulating film provided on the upper surface of the piezoelectric substrate to cover the first insulating film, and a reaction section provided on the upper surface of the second insulating film above the propagation region. The reaction section is configured to react with an object. A velocity of a transverse wave propagating through the first insulating film is higher than a velocity of a transverse wave propagating through the second insulating film. The acoustic wave sensor described above has high detection sensitivity.

Elastic wave sensor

An acoustic wave device includes a piezoelectric substrate, a comb-shaped electrode formed on the piezoelectric substrate and configured to excite a Rayleigh wave as a main acoustic wave, a first dielectric film formed above the piezoelectric substrate to cover the comb-shaped electrode, and a second dielectric film having a portion provided between electrode fingers of the comb-shaped electrode and a portion provided above the comb-shaped electrode. The portion provided between the electrode fingers is provided between the piezoelectric substrate and the first dielectric film. The portion provided above the comb-shaped electrode is provided between the comb-shaped electrode and the first dielectric film. A speed of a transverse wave propagating through the first dielectric film is lower than a speed of the Rayleigh wave excited by the comb-shaped electrode. A speed of a transverse wave propagating through the second dielectric film is higher than the speed of Rayleigh wave excited by the comb-shaped electrode.

Acoustic wave device and antenna duplexer using the same

An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the piezoelectric substrate, a first dielectric film covering the upper surface of the piezoelectric substrate to cover the IDT electrode, and a second dielectric film covering an upper surface of the first dielectric film. The second dielectric film includes a thin portion positioned in a tip region of electrode fingers of the IDT electrode and a thick portion which is positioned in a middle region of the IDT electrode and is thicker than the thin portion. The acoustic wave device suppresses spurious emission and has superior passband characteristics.

Acoustic wave device

In a MEMS device having a substrate, a sealing membrane, and a movable portionof beam and an electrodewhich have a region wherein they overlap with a gap in perpendicular to a substratesurface, a first cavityis on the side of the movable portionin the direction perpendicular to the surface of the substrate, and a second cavity is the other cavity, and an inner surface a of a side wall A in contact with the electrode, of the first cavity, is positioned more inside than an inner surface b of a side wall B in contact with the electrode, of the second cavity, in the direction parallel to the substrate surface, such that the movable portiondoes not collide with the electrodewhen mechanical stress is applied from outside to the sealing membrane

MEMS element, and manufacturing method of MEMS element

A resonator using the MEMS technology is provided which improves the accuracy of a shape of electrodes so as avoid a short circuit that would otherwise be caused between input and output electrodes to thereby increase the reliability thereof. A resonator includes a substrate, an insulation layerformed selectively on the substrateas a sacrificial surface, a beamformed on the substratevia a space, a first support portionA formed on the insulation layerof the same material as that of the beam, and electrodes formed with a space defined between the beamand themselves for signals to be inputted thereinto and outputted therefrom. A sectional area of the beamand a sectional area of the first support portionA are substantially equal in a section which is perpendicular to a longitudinal direction of the beam

Resonator and production method thereof

A MEMS oscillator having a feedback-type oscillation circuit including a MEMS resonator and an amplifier, a voltage control unit operable to control a bias voltage applied to an oscillating member of the MEMS resonator, and an auto gain control unit which receives an output from the amplifier and, based on a level of the output, to output an amplitude control signal for controlling a gain of the amplifier to the amplifier such that the level of the output from the amplifier comes to be a predetermined level, wherein the voltage control unit controls the bias voltage applied to the oscillating member based on an operating temperature of the MEMS resonator such that a peak gain of the MEMS resonator comes to have a predetermined value regardless of the operating temperature, and the voltage control unit derives the operating temperature of the MEMS resonator by monitoring the amplitude control signal.

Oscillator with MEMS resonator

A MEMS resonatorincluding a substrate; an vibratorincluding an mechanically vibrating part and a fixed part; at least one electrodethat is close to the vibrator and has an area overlapping with the vibrator across a gapin a direction perpendicular to a surface of the substrate; and a pressure transferring mechanism to displace the at least one electrode according to an externally applied pressure so as to change the gap; is connected to a detection circuit that detects transmission characteristics of an AC signal from an input electrode to an output electrode, the input and output electrodes being one and the other of the vibratorand the at least one electrode, and the pressure is detected based on the transmission characteristics of the AC signal that is detected by the detection circuit.

MEMS pressure sensor

A piezoelectric filter of the present invention is provided with first and second piezoelectric vibrators, each having a substrate, a lower load film formed on the substrate, a lower electrode formed on the lower load film, a piezoelectric element formed on the lower electrode, an upper electrode formed on the piezoelectric element and an upper load film formed on the upper electrode, and the piezoelectric filter is configured by electrically connecting the first and second piezoelectric vibrators to each other, and the piezoelectric element of the first piezoelectric vibrator and the piezoelectric element of the second piezoelectric vibrator correspond to respectively different areas of the same piezoelectric element; thus, the resonance frequencies of the first and second piezoelectric vibrators are adjusted by the respective lower load films and upper load films of the first piezoelectric vibrator and the second piezoelectric vibrator so that the resonance frequencies of the first and second piezoelectric vibrators are made different from each other.

Growing community of inventors

Osaka, Japan

Tomohiro Iwasaki