Hitachi Chemical Company, Ltd.

Showa Denko Materials Co., Ltd.

Resonac Corporation

Tomohiro Iwano

Hisataka Minami

Tomoyasu Hasegawa

Toshiaki Akutsu

Takaaki Matsumoto

Tomomi Kukita

Koji Fujisaki

Daisuke Ryuzaki

Takenori Narita

Hirotaka Akimoto

Takahiro Hidaka

Tadahiro Kimura

Keita Arakawa

Satoyuki Nomura

Toshio Takizawa

Masato Fukasawa

Yousuke Hoshi

Masayuki Hanano

Haruaki Sakurai

Masaya Nishiyama

Munehiro Oota

Chisato Kikkawa

Yuya Otsuka

Yutaka Nomura

Tetsuro Yamashita

Masako Aoki

Yutaka Goh

Keisuke Inoue

A polishing liquid containing: abrasive grains; at least one hydroxy acid component selected from the group consisting of a hydroxy acid and a salt thereof; and a compound Z, in which the compound Z has a hydrocarbon group which may be substituted and a polyoxyalkylene group, and a Z value represented by General Formula (1) below is 20 or more:=0.1×  (1)[in Formula (1), 'a' represents the number of carbon atoms of the hydrocarbon group, “b” represents the total number of oxyalkylene groups in the compound Z, and “c” represents an HLB value of the compound Z.]

Polishing liquid, polishing liquid set, and polishing method

A slurry for polishing a carbon-containing silicon oxide, the slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, a particle size of the second particles is smaller than a particle size of the first particles, the first particles contain cerium oxide, and the second particles contain a cerium compound.

Slurry and polishing method

A slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, the second particles contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and a ratio of the lowest valence among the plurality of valences of the metal is 0.10 or more in X-ray photoelectron spectroscopy.

A slurry containing abrasive grains and a liquid medium, in which the abrasive grains contain at least one metal compound selected from the group consisting of a metal oxide and a metal hydroxide, the metal compound contains a metal capable of taking a plurality of valences, and when the slurry is brought into contact with a surface to be polished to bring the abrasive grains into contact with the surface to be polished, the slurry yields 0.13 or more in X-ray photoelectron spectroscopy as a ratio of the lowest valence among the plurality of valences of the metal.

Slurry, screening method, and polishing method

A polishing liquid containing abrasive grains, a hydroxy acid, a polyol, a cationic compound, and a liquid medium, in which a zeta potential of the abrasive grains is positive and a weight average molecular weight of the cationic compound is less than 1000.

A polishing liquid containing: abrasive grains; a hydroxy acid; a polymer compound having at least one selected from the group consisting of a hydroxyl group and an amide group; and a liquid medium, in which a zeta potential of the abrasive grains is positive, and a weight average molecular weight of the polymer compound is 3000 or more.

A slurry containing abrasive grains, a liquid medium, and a salt of a compound represented by formula (1) below, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, and the second particles contain a hydroxide of a tetravalent metal element. [In formula (1), R represents a hydroxyl group or a monovalent organic group].

Polishing liquid comprising abrasive grains, a phosphonic acid compound having a molecular weight of 210 or more, and at least one selected from the group consisting of amino acids and amino acid derivatives, in which a silanol group density of the abrasive grains is 6.5 groups/nmor less, and a degree of association of the abrasive grains is 1.5 or more.

Polishing solution and polishing method

A polishing liquid comprises: abrasive grains; a compound having an aromatic heterocycle; an additive (excluding the compound having an aromatic heterocycle); and water, wherein: the abrasive grains include a hydroxide of a tetravalent metal element; the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom; and a charge of the endocyclic nitrogen atom obtained by using the Merz-Kollman method is &#x2212;0.45 or less.

Slurry, polishing-liquid set, polishing liquid, and polishing method for base

A polishing liquid containing abrasive grains, a hydroxy acid, a polyol, and a liquid medium, in which a zeta potential of the abrasive grains is positive, and the hydroxy acid has one carboxyl group and one to three hydroxyl groups.

A slurry containing abrasive grains and a liquid medium, the abrasive grains including first particles and second particles being in contact with the first particles, the first particles containing ceria, the first particles having a negative zeta potential, the second particles containing a hydroxide of a tetravalent metal element, and the second particles having a positive zeta potential.

A slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, a particle size of the second particles is smaller than a particle size of the first particles, the first particles contain cerium oxide, the second particles contain a cerium compound, and in a case where a content of the abrasive grains is 0.1% by mass, an absorbance for light having a wavelength of 380 nm in a liquid phase obtained when the slurry is subjected to centrifugal separation for 5 minutes at a centrifugal acceleration of 5.8&#xd7;10G exceeds 0.

Slurry, and polishing method

A slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, a particle size of the second particles is smaller than a particle size of the first particles, the first particles contain cerium oxide, the second particles contain a cerium compound, and in a case where a content of the abrasive grains is 0.1% by mass, a BET specific surface area of a solid phase obtained when the slurry is subjected to centrifugal separation for 60 minutes at a centrifugal acceleration of 1.1&#xd7;10G is 40 m/g or more.

A slurry containing abrasive grains and a liquid medium, in which the abrasive grains include first particles and second particles in contact with the first particles, the first particles contain cerium oxide, the second particles contain a cerium compound, and an Rsp value calculated by Formula (1) below is 1.60 or more:=()&#x2212;1&#x2003;&#x2003;(1)[in the formula, Tav represents a relaxation time (unit: ms) obtained by pulsed NMR measurement of the slurry in a case where a content of the abrasive grains is 2.0% by mass, and Tb represents a relaxation time (unit: ms) obtained by pulsed NMR measurement of a supernatant solution obtained when the slurry is subjected to centrifugal separation for 50 minutes at a centrifugal acceleration of 2.36&#xd7;10G in a case where the content of the abrasive grains is 2.0% by mass.]

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Tokyo, Japan

Tomohiro Iwano