Nuflare Technology, Inc.

Kabushiki Kaisha Toshiba

Tomohiro Iijima

Takayuki Abe

Junichi Suzuki

Hiroshi Matsumoto

Hideo Inoue

Keiko Emi

Munehiro Ogasawara

Ryoichi Yoshikawa

Jun Yashima

Takashi Kamikubo

Hirohito Anze

Susumu Oogi

Hideyuki Tsurumaki

Yoshiaki Hattori

Mitsuko Shimizu

Takashi Saito

Hideo Tsuchiya

Toru Tojo

Yasuo Kato

Noriaki Nakayamada

Kiyoshi Hattori

Hitoshi Higurashi

Kazuto Matsuki

Kenji Ohtoshi

Hayato Kimura

Tomoo Motosugi

Kei Hasegawa

Eiji Murakami

Yoshiaki Onimaru

Yujin Handa

Masafumi Ise

Tetsuyuki Arai

Tateki Watanabe

A multi charged particle beam writing method includes performing ON/OFF switching of a beam by an individual blanking system for the beam concerned, for each beam in multi-beams of charged particle beam, with respect to each time irradiation of irradiation of a plurality of times, by using a plurality of individual blanking systems that respectively perform beam ON/OFF control of a corresponding beam in the multi-beams, and performing blanking control, in addition to the performing ON/OFF switching of the beam for the each beam by the individual blanking system, with respect to the each time irradiation of the irradiation of the plurality of times, so that the beam is in an ON state during an irradiation time corresponding to irradiation concerned, by using a common blanking system that collectively performs beam ON/OFF control for a whole of the multi-beams.

Multi charged particle beam writing method and multi charged particle beam writing apparatus

Data including information related to each area with a graphic disposed therein is inputted to the writing apparatus. The area is delimited with meshes each having a predetermined size. Next, an area value of a graphic lying within each of the meshes and its center-of-gravity position are determined. For every mesh, a check is made whether the area value is less than or equal to a predetermined value. When the area value is less than or equal to the predetermined value, a range allowable for an x coordinate of the center-of-gravity position is determined and a check is made whether an actual x coordinate falls within this range. Next, a range allowable for a y coordinate of the center-of-gravity position is determined and a check is made whether an actual y coordinate falls within this range.

Data verification method and charged particle beam writing apparatus

A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions to create a map of base doses of the beam in respective of said second regions and to prepare a map of proximity effect correction coefficients in respective of said second regions, using the maps to determine second corrected doses of the beam for proximity effect correction in the third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.

Beam dose computing method and writing method and record carrier body and writing apparatus

A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.

Method and apparatus for writing

A pattern inspection apparatus includes a light source configured to emit a pulsed light, a stage on which an inspection target workpiece is placed, a sensor, including a plurality of light receiving elements two-dimensionally arrayed, configured to capture a pattern image in a two-dimensional region of the inspection target workpiece which is irradiated with the pulsed light, by using the plurality of light receiving elements, and a comparing unit configured to compare data of the pattern image with predetermined reference pattern image data, wherein the stage moves to be shifted by a number of pixels, being the number of natural number times one pixel, between pulses of the pulsed light.

Pattern inspection apparatus and pattern inspection method

A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.

Beam dose computing method and writing method and record carrier body and writing apparatus for determining an optimal dose of a charged particle beam

A method for calculating area values of a pattern written by using a charged particle beam, includes virtually dividing a pattern into a plurality of mesh-like first square regions surrounded by first grids defined at intervals of a predetermined size, virtually dividing the pattern into a plurality of mesh-like second square regions surrounded by second grids defined at intervals of the predetermined size, wherein the second grids being positionally deviated from the first grids by a half of the predetermined size, distributing an area value of a sub-pattern in each of the second square regions to a plurality of apexes of each of the second square regions such that a center-of-gravity position of the sub-pattern does not change, wherein the sub-pattern being a part of the pattern, and outputting the distributed area values as area values, for correcting a proximity effect, defined at the center position of each of the first square regions.

Pattern area value calculating method, proximity effect correcting method, and charged particle beam writing method and apparatus

A charged particle beam writing method includes inputting pattern data for writing a writing region, predicting a writing time for writing the pattern of the pattern data, acquiring, by using a correlation among a time required from a writing start time, the predicted writing time and a base dose of a charged particle beam, a base dose of the charged particle beam after an optional time from a writing start in the case in which the pattern are written, acquiring, by using a correlation among the time required from the writing start time, the predicted writing time and a proximity effect correction coefficient, a proximity effect correction coefficient after an optional time from the writing start in the case in which the pattern are written, calculating, by using the base dose and the proximity effect correction coefficient after the optional time, an exposure dose of the charged particle beam after an optional time from a writing start in the writing time, and writing an optional position in the writing region by using the charged particle beam corresponding to the dose.

Charged particle beam writing method and apparatus and readable storage medium

A charged particle beam writing apparatus includes a first part configured, based on pattern data, to estimate a total writing time, a second part configured to acquire a base dose at an arbitrary time, after writing start time and within the total writing time by using a first correlation among a time having passed since the writing start time, the total writing time, and the base dose, a third part configured to acquire a fogging effect correction coefficient at the arbitrary time by using a second correlation among the time, the total writing time and the coefficient, a forth part configured to calculate a beam dose at the arbitrary time by using the base dose and the coefficient, a fifth part configured to calculate a beam irradiation time based on the beam dose, a deflector for deflecting the beam, and an aperture for blocking the beam.

Charged particle beam writing apparatus and method thereof, and method for resizing dimension variation due to loading effect

A method for writing a pattern on a workpiece by use of a charged particle beam, the method includes calculating a corrected dose including at least a proximity effect correction dose for correction of proximity effect, calculating a corrected residual difference-corrected dose for correcting a correction residual difference of the corrected dose, calculating a exposure dose of the charged particle beam to be corrected by the corrected dose as corrected by the correction residual difference-corrected dose, and irradiating the charged particle beam onto the workpiece in such a way as to become the exposure dose.

Charged particle beam writing method and apparatus

There is provided a charged beam drawing apparatus which includes main/sub two-stage deflectors, divides a main deflection drawing region on a sample into sub deflection drawing regions determined by the deflection width of the sub deflector, selects one of the sub deflection drawing regions by use of the main deflector and draws shots in the selected sub deflection drawing region by use of the sub deflector. A sub deflection driving unit includes a sub deflection sensitivity correction circuit, a sub deflection astigmatic correction circuit, an adder circuit which adds an output of the sub deflection sensitivity correction circuit and an output of the sub deflection astigmatic correction circuit, and a deflection amplifier which additionally applies an output of the adder circuit to the sub deflector.

Charged beam drawing apparatus and charged beam drawing method

A pattern writing method acquires the area of a pattern segment located in each of a plurality of small regions obtained by dividing a region on which a pattern is to be written, small region by small region, and writes a pattern based on an optimum dose calculated based on this area. This method employs a scheme of shifting pattern segments and averaging the accumulated area, so that even when the pitch of repetitive patterns slightly differs from the side length of each small region in the pitch direction, a peculiar error does not occur, thereby ensuring highly-precise proximity effect correction and contributing to improving the precision of writing an LSI pattern.

Pattern writing method

A charged beam lithography system includes a charged particle gun for generating charged beams, a main deflecting system and a sub-deflecting system for deflecting the charged beams generated by the charged particle gun, and a control computer. The charged beam lithography system is designed to cause the surface of a substrate to be irradiated with the charged beams from the charged particle gun while continuously moving a stage, to write a desired pattern for each of stripes defined by the maximum deflection widths of the main deflecting system and the sub-deflecting system. The charged beam lithography system further comprises: a real time proximity effect correcting circuit for calculating an optimum dosage for each of the stripes by correcting the dosage of the electron beams in view of the influence of the proximity effect; and a cash memory for storing the optimum dosage data for at least two of the stripes. Thus, the charged beam lithography system is designed to shift a divided form of the whole written region using the stripes at each wiring number of times, by a predetermined distance from a predetermined reference position in a direction perpendicular to a stage continuous moving direction, while selectively extracting the optimum dosage data from the cash memory so as to correspond to each of written stripes at each writing number of times, to write patterns. During the writing operation, the optimum dosage data corresponding to the next region to be written are transferred from the real time proximity effect correcting circuit to the cash memory, and the real time proximity effect correcting circuit calculates optimum dosages for the stripes corresponding to regions to be written after next and thereafter.

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Shizuoka, Japan

Tomohiro Iijima