Renesas Technology Corp.

Fuji Jukogyo Kabushiki Kaisha

Tomohiro Hosokawa

Yoshiyuki Ishigaki

Motoi Ashida

Takashi Terada

Yukio Maki

Yasuichi Masuda

Satoshi Shimizu

Hiroyuki Matsuda

Tsuyoshi Koga

Mitsumasa Kuwabara

Yasuhiro Fujii

Yutaka Miyata

Makoto Dei

Yusuke Takagi

There is provided a front vehicle body structure. The structure includes a front-side frame which is disposed on each side of a power unit in a vehicle width direction, and extends in a fore-and-aft direction; and a load-transfer member disposed outside in the width direction, near a front-end of the front-side frame, a rear end of the load-transfer member being fixed to a certain position of a outer lateral side of the front-side frame in the width direction, the certain position being located forwardly of a center of the power unit in the fore-and-aft direction, a front-end of the load-transfer member being disposed forwardly and outwardly of the rear end. A load to the front-end of the load-transfer member in a rearward direction of the vehicle causes a vicinity area of the fixed position to be displaced in a direction in which the vicinity area approaches the power unit.

Front vehicle body structure

A semiconductor memory device having as its main storage portion a capacitor storing charges as binary information and an access transistor controlling input/output of the charges to/from the capacitor, and eliminating the need for refresh, is obtained. The semiconductor memory device includes a capacitor with a storage node located above a semiconductor substrate and holding the charges corresponding to a logical level of stored binary information, an access transistor located on the semiconductor substrate surface and controlling input/output of the charges accumulated in the capacitor, and a latch circuit located on the semiconductor substrate and maintaining a potential of the capacitor storage node. At least one of circuit elements constituting the latch circuit is located above the access transistor.

Semiconductor memory device

As an opening exposing a surface of an element-forming region positioned in a region lying between two gate electrodes, a first opening is formed based on a resist pattern formed such that a portion of a region where the opening is formed overlaps two-dimensionally with a portion of one gate electrode. As an opening exposing a surface of one gate electrode, a second opening is formed based on a resist pattern formed such that a region where the opening is formed overlaps two-dimensionally solely with one gate electrode. Here, the first opening is covered with a non-photosensitive, organic film and the resist pattern. Thereafter, a tungsten interconnection is formed in the first and second openings. Thus, a semiconductor device, of which production cost is reduced, and in which electrical short-circuit and falling off of an interconnection are suppressed, can be obtained.

Method of manufacturing semiconductor device

An SRAM comprises a memory cell including first and second access nMOS transistors, first and second driver nMOS transistors and first and second load pMOS transistors, polysilicon wires forming gates of the first and second access nMOS transistors and polysilicon wires extending in the same direction as the polysilicon wires for forming gates of the first and second driver nMOS transistors and gates of the first and second load pMOS transistors. The gate widths of the first and second access nMOS transistors and those of the first and second driver nMOS transistors are equalized with each other.

Static semiconductor memory device

A manufacturing method of a semiconductor device to perform processing, including pre-processing and post-processing, on a semiconductor substrate, a characteristic of the processed semiconductor substrate is inspected, whether the semiconductor substrate complies with a predetermined standard is judged, and a semiconductor substrate not complying with the standard is re-processed so that the semiconductor substrate complies with the standard.

Method of manufacturing semiconductor device and system for manufacturing the same

Growing community of inventors

Hyogo, Japan

Tomohiro Hosokawa