Mitsubishi Electric Corporation

Tomohiro Hieda

Tetsuo Yamashita

Masaomi Miyazawa

Mituharu Tabata

Takuya Takahashi

Koichi Masuda

Yoshitaka Otsubo

Hiroki Muraoka

According to the present invention, a semiconductor device includes a substrate having a metallic pattern formed on a top surface of the substrate, a semiconductor chip provided on the metallic pattern, a back surface electrode terminal in flat plate form connected to the metallic pattern with a wire, a front surface electrode terminal in flat plate form, the front surface electrode terminal being in parallel to the back surface electrode terminal above the back surface electrode terminal, extending immediately above the semiconductor chip, and being directly joined to a top surface of the semiconductor chip, a case surrounding the substrate and a seal material for sealing an inside of the case.

Method of manufacturing a semiconductor device

According to the present invention, a semiconductor device includes a semiconductor chip, resistance of which changes in accordance with temperature, an external resistor connected in series with the semiconductor chip and a detector configured to detect, while a first voltage is applied between both ends of a series circuit formed by the semiconductor chip and the external resistor, a second voltage applied between both ends of the external resistor, wherein the detector calculates a temperature of the semiconductor chip from the second voltage.

Semiconductor device and power conversion device

Semiconductor device and method of manufacturing the semiconductor device

A semiconductor device includes a semiconductor element and a ceramic circuit substrate on which the semiconductor element is mounted. The ceramic circuit substrate includes a ceramic substrate having one surface and the other surface facing each other, a metal circuit board joined to the one surface of the ceramic substrate and electrically connected to the semiconductor element, and a metal heat-dissipation plate joined to the other surface of the ceramic substrate. The metal circuit board is greater in thickness than the metal heat-dissipation plate. A surface of the metal heat-dissipation plate on a side opposite to the ceramic substrate is larger in area than a surface of the metal circuit board on a side opposite to the ceramic substrate. Thereby, a semiconductor device capable of suppressing warpage of the ceramic substrate can be achieved.

Semiconductor device

Growing community of inventors

Tokyo, Japan

Tomohiro Hieda