Disco Corporation

Jeol Ltd.

Fujirebio Inc.

Nihon Parkerizing Co., Ltd.

Fujirebio Kabushiki Kaisha

Fujirbio Inc.

Tomohiro Endo

Kazuyuki Oguri

Hidenobu Kawada

Takahiro Matsumoto

Yusuke Nakamura

Taiki Sawabe

Mizuki Nakamura

Wakana Onoe

Hidehiro Yamaguchi

Yasushi Kondo

Takeshi Muranaka

Toshiaki Ohtake

Chikara Aihara

Nobuhiro Taniguchi

An automatic analysis device and method having a BF separation process, wherein the width in a container conveyance direction of a surface facing a reaction container of a magnet for preliminary magnetic collection of a first magnetic generation part () is set to have a length including a region for housing a liquid sample of the reaction container conveyed to a magnetic collection position of the first magnetic generation part. An end in the container conveyance direction of a surface facing the reaction container of a magnet for regular magnetic collection of a second magnetic generation part () is designed to be close to the center of the region for housing the liquid sample of the reaction container conveyed to a magnetic collection position of the second magnetic generation part.

Automatic analysis device and separation and washing method

A water-based surface treatment agent includes an organic-inorganic silicon compound (A) and inorganic particle (B), wherein the organic-inorganic silicon compound (A) is adapted to be a compound that is obtained by mixing a colloidal silica (C) and an organoalkoxysilane (D). In this regard, the ratio (M/M) between the solid content mass Mof the organic-inorganic silicon compound (A) and the solid content mass Mof the inorganic particle (B) preferably falls within the range from 0.2 or more and 2.0 or less, the average particle size of the organic-inorganic silicon compound (A) preferably falls within the range of 3 nm or more and 500 nm or less. In addition, the average particle size of the inorganic particle (B) preferably falls within the range of 10 nm or more and 600 nm or less.

Aqueous hydrophilizing surface treatment agent, hydrophilic coating film and hydrophilizing surface treatment method

The gripping mechanism is a gripping mechanism for gripping a cuvette T, the gripping mechanism comprising: a sandwiching sectionfor holding the cuvette T in a laterally sandwiching manner; a pressing sectionfor pressing downward an upper end surface of the cuvette T held in a sandwiching manner by the sandwiching section, wherein the pressing sectionis arranged such that, with the cuvette T being held in a sandwiching manner by the sandwiching section, a central axis of the cuvette T along a vertical direction coincides mutually with a central axis of the pressing sectionin the vertical direction.

Gripping mechanism

A measurement device that includes a plurality of lines for conveying a reaction container containing a sample and measures a predetermined material included in the sample while conveying the reaction container by the plurality of lines, wherein the plurality of lines include: a first reaction line for conveying a reaction container at a first convey speed; a second reaction line for conveying a reaction container at a second convey speed; and a measurement line for measuring a predetermined material included in a sample reacted with a reagent within the reaction container in the first reaction line and a sample reacted with a reagent within the reaction container in the second reaction line, the measurement line conveying the reaction containers at a third convey speed that is higher than the first convey speed and the second convey speed.

Measurement device and measurement method

A method of detecting a transmission laser beam is disclosed. A laser beam of a wavelength having a transparency to a plate-shaped workpiece having a first face and a second face is irradiated upon the workpiece from the first face side with a focal point of the laser beam positioned in the inside of the workpiece. The laser beam is detected after it has passed through the workpiece to the second face side. A photosensitive sheet is positioned to hold the workpiece on a holding face of a chuck table. A photosensitive layer between the sheet and the workpiece is opposed to the second face of the workpiece. The laser beam is irradiated from the first face side of the workpiece, and the state of the transmission laser beam from a photosensitive reaction region formed in the photosensitive layer of the photosensitive sheet is confirmed.

Detection method of transmission laser beam

A laser machining apparatus that includes an interferometric height position detection unit, a condensing point position adjustment unit, and a confocal optical height position detection unit. A controller of the laser machining apparatus specifies, as a correction value, the difference between the two height positions of the upper face of the workpiece, one detected by the confocal optical height position detection unit and the other detected by the interferometric height position detection unit. The controller controls the condensing point position adjustment unit based on the height position obtained by correcting the height position of the upper face of the workpiece detected by the interferometric height position detection unit using the correction value.

Laser machining apparatus

A wafer processing method including a modified layer forming step of applying a laser beam having a transmission wavelength to a substrate from the back side of the substrate along division lines. The modified layer forming step includes the steps of making the polarization plane of linearly polarized light of the laser beam parallel to the direction perpendicular to each division line, shifting the beam center of the laser beam from the optical axis of a focusing lens of a focusing unit for focusing the laser beam, in the direction perpendicular to each division line, and shifting the focal point of the laser beam by the focusing lens in the same direction as the direction where the beam center of the laser beam has been shifted.

Wafer processing method

A processing method for a wafer which has, on a surface thereof, a device region in which a plurality of devices are formed and partitioned by division lines and an outer periphery excess region surrounding the device region, includes a dividing groove formation step of irradiating a laser beam of a wavelength having absorbability by a wafer along the division lines to form dividing grooves serving as start points of cutting, and a dividing step of applying external force to the wafer on which the dividing grooves are formed to cut the wafer into the individual devices. At the dividing groove formation step, the dividing grooves are formed along the division lines in the device region while a non-processed region is left in the outer periphery excess region on extension lines of the division lines.

Laser beam processing method for a wafer

A processing method for a wafer on which a plurality of devices are formed and partitioned by scheduled division lines includes a dividing groove by irradiating a laser beam of a wavelength to which the wafer has absorbency along the scheduled division lines to form dividing grooves which are to be used as start points of division. An external force divides the wafer into individual devices. The dividing grooves are formed by irradiating a laser beam of a first energy which is comparatively low upon a selected scheduled division line to form a first dividing groove which is to be used as a start point of division, and irradiating another laser beam of a second energy which is higher than the first energy upon scheduled division lines other than the selected scheduled division line to form second dividing grooves which are to be used as start points of division.

Laser processing method for wafer

A laser beam machining method wherein machining areas in which to form machined grooves and machining start point areas in which to form shallow grooves shallower than the machined grooves are alternately set in each of streets formed on a wafer, and the machined grooves and the shallow grooves are continuously formed by scanning an irradiation point of a laser beam along each of the streets.

Laser beam machining method and laser beam machining apparatus

A light emitting device manufacturing method including the steps of corrugatedly scanning a laser beam along a plurality of division lines formed on a light emitting device wafer having a sapphire substrate layer and a light emitting layer to apply the laser beam to the sapphire substrate layer, thereby performing laser processing for the sapphire substrate layer and next applying an external force to a processed locus formed along each division line by the above laser processing to thereby divide the light emitting device wafer into a plurality of light emitting devices. The sapphire layer of each light emitting device has side surfaces whose horizontal sectional shape is a corrugated shape. Accordingly, the number of total reflections on the side surfaces of the sapphire layer can be reduced to thereby achieve efficient emergence of light from the sapphire layer.

Manufacturing method for light emitting device

A method of preparing gamma globulin suitable for intravenous administration comprising a step of treating a gamma globulin composition containing aggregates of gamma globulin with polypropylene glycol (PPG) and dispersing agents for PPG under selected conditions.

Growing community of inventors

Tokyo, Japan

Tomohiro Endo