Rohm Co., Ltd.

Tomohiro Date

Yoshikazu Fujimori

Noriyuki Shimoji

Takashi Naiki

Hiroaki Ito

Nobufumi Matsuo

Koji Nomura

Norikazu Ito

A piezoelectric element includes a single crystal piezoelectric film, wherein the single crystal piezoelectric film includes an aluminum nitride film and wherein a full width at half maximum at (002) diffraction peak of the aluminum nitride film is smaller than 1.00 degree.

Piezoelectric element, method of manufacturing the same, surface acoustic wave element, and piezoelectric thin film resonance element

A transducer includes: a film support portion having a hollow portion; a vibration film displaceable in a film thickness direction; a piezoelectric element, the piezoelectric element including a pair of electrodes and a piezoelectric film; and in regions overlapping the hollow portion, a plurality of first regions having a first total film thickness which is a sum of a film thickness of the vibration film and a film thickness of the piezoelectric element, and a plurality of second regions having a second total film thickness which is a sum of a film thickness of the vibration film and a film thickness of the piezoelectric element, the second total film thickness being different from the first total film thickness. The first regions and the second regions are alternately arranged, and one of the first regions is adjacent to a connection portion between the film support portion and the vibration film.

Transducer and electronic device

A transducer includes: a piezoelectric element; and a film body including a film support portion having a hollow portion, and a vibration film connected to the film support portion and displaceable in a film thickness direction, the film body having the piezoelectric element stacked over the vibration film. The piezoelectric element includes: a first stacked body having a first pair of electrodes and a first piezoelectric film sandwiched between the first pair of electrodes; and a second stacked body having a second pair of electrodes and a second piezoelectric film sandwiched between the second pair of electrodes, the second stacked body being separated from the first stacked body.

Transducer and driving method thereof, and system

A piezoelectric elementincludes a lower electrode, constituted of a Pt/Ti laminated film, a PLT seed layer, formed on the lower electrode, a PZT piezoelectric film, formed on the PLT seed layer, and an upper electrode, formed on the PZT piezoelectric film. A curve Qis a curve drawn such as to pass through a plurality of plotted points, each expressing a PLT () peak intensity with respect to a Pt () peak intensity according to a substrate setting temperature during forming of the Pt/Ti laminated film. A relationship of the PLT () peak intensity with respect to the Pt () peak intensity is within a range in the curve Quntil the PLT () peak intensity decreases by 5% from a peak point P, at which the PLT () peak intensity is the maximum, and a () orientation rate of PLT constituting the seed layer is not less than 85%.

Piezoelectric element

A piezoelectric elementincludes a lower electrode, constituted of a Pt/Ti laminated film, a PLT seed layer, formed on the lower electrode, a PZT piezoelectric film, formed on the PLT seed layer, and an upper electrode, formed on the PZT piezoelectric film. A curve Qis a curve drawn such as to pass through a plurality of plotted points, each expressing a PLT (100) peak intensity with respect to a Pt (111) peak intensity according to a substrate setting temperature during forming of the Pt/Ti laminated film. A relationship of the PLT (100) peak intensity with respect to the Pt (111) peak intensity is within a range in the curve Quntil the PLT (100) peak intensity decreases by 5% from a peak point P, at which the PLT (100) peak intensity is the maximum, and a (100) orientation rate of PLT constituting the seed layer is not less than 85%.

An inkjet printing head includes a piezoelectric element having a lower electrode, a piezoelectric film formed above the lower electrode, and an upper electrode formed above the piezoelectric film, a hydrogen barrier film covering an entirety of a side surface of the upper electrode and the piezoelectric film, and an interlayer insulating film that has an opening at an upper surface center of the upper electrode, is laminated on the hydrogen barrier film, and faces the entirety of the side surface of the upper electrode and the piezoelectric film across the hydrogen barrier film.

Device using a piezoelectric element and method for manufacturing the same

An inkjet printing headincludes a piezoelectric elementhaving a lower electrode, a piezoelectric filmformed above the lower electrode, and an upper electrodeformed above the piezoelectric film, a hydrogen barrier filmcovering an entirety of a side surface of the upper electrodeand the piezoelectric film, and an interlayer insulating filmthat has an openingat an upper surface center of the upper electrode, is laminated on the hydrogen barrier film, and faces the entirety of the side surface of the upper electrodeand the piezoelectric filmacross the hydrogen barrier film

A ferroelectric capacitor includes a ferroelectric film, a lower electrode in contact with one surface of the ferroelectric film, and an upper electrode in contact with the other surface of the ferroelectric film. At least one of the upper electrode and the lower electrode has a stacked electrode structure in which one or more oxide conductive layers and one or more metal layers are stacked alternately, and the stacked electrode structure includes at least one of two or more oxide conductive layers and two or more metal layers.

Growing community of inventors

Kyoto, Japan

Tomohiro Date