Fujitsu Semiconductor Limited

Fujitsu Corporation

Fujitsu Microelectronics Limited

Tomohiko Tsutsumi

Taiji Ema

Hideyuki Kojima

Toru Anezaki

Tatsuji Araya

Osamu Tsuboi

Kazutaka Yoshizawa

The semiconductor device includes a first MIS transistor including a gate insulating film, a gate electrodeformed on the gate insulating filmand source/drain regions, a second MIS transistor including a gate insulating filmthicker than the gate insulating film, a gate electrodeformed on the gate insulating film, source/drain regionsand a ballast resistorconnected to one of the source/drain regions, a salicide block insulating filmformed on the ballast resistorwith an insulating filmthinner than the gate insulating filminterposed therebetween, and a silicide filmformed on the source/drain regions

Semiconductor device and method of manufacturing the same

A semiconductor device includes a first CMOS inverter, a second CMOS inverter, a first transfer transistor and a second transfer transistor wherein the first and second transfer transistors are formed respectively in first and second device regions defined on a semiconductor device by a device isolation region so as to extend in parallel with each other, the first transfer transistor contacting with a first bit line at a first bit contact region on the first device region, the second transfer transistor contacting with a second bit line at a second bit contact region on the second device region, wherein the first bit contact region is formed in the first device region such that a center of said the bit contact region is offset toward the second device region, and wherein the second bit contact region is formed in the second device region such that a center of the second bit contact region is offset toward the first device region.

Semiconductor memory device and semiconductor device group

An n-type embedded layer is formed in an N-LV region of a SRAM cell region after an element isolation insulating film is formed on a p-type Si substrate. Thereafter, a p-well and an n-well are formed. In formation of a channel-doped layer, ion implantation is also performed into the N-LV region of the SRAM cell region in parallel with ion implantation into an N-LV of a logic circuit region. Ion-implantation is further performed into the N-LV region of the SRAM cell region in parallel with ion implantation into an N-MV of an I/O region.

Semiconductor device

A semiconductor device comprising: a first insulation filmformed above a base substrate; a second insulation filmformed on the first insulation film and having different etching characteristics from the first insulation film; and a capacitorincluding a storage electrodeformed on the second insulation film, projected therefrom, the storage electrode being formed, extended downward from side surfaces of the second insulation film. The lower ends of the storage electrodes are formed partially below the etching stopper film, whereby the storage electrodes are fixed by the etching stopper film. Accordingly, the storage electrodes are prevented from peeling off in processing, such as wet etching, etc. The semiconductor device can be fabricated at high yields.

Process for fabricating semiconductor device

A silicon oxide film as an insulating film is accumulated so as to cover a whole surface of a silicon substrate including a surface of a resistance element by, for example, a thermal CVD method, just after a resist pattern is removed. This silicon oxide film is processed to form a silicide block on the resistance element, and side wall spacers at both side surfaces of gate electrodes, and so on, of respective transistors, at the same time.

Manufacturing method of semiconductor device

Semiconductor device and process for fabricating the same

A semiconductor device comprising: a first insulation film formed above a base substrate ; a second insulation film formed on the first insulation film and having different etching characteristics from the first insulation film; and a capacitor including a storage electrode formed on the second insulation film, projected therefrom, the storage electrode being formed, extended downward from side surfaces of the second insulation film. The lower ends of the storage electrodes are formed partially below the etching stopper film, whereby the storage electrodes are fixed by the etching stopper film. Accordingly, the storage electrodes are prevented from peeling off in processing, such as wet etching, etc. The semiconductor device can be fabricated at high yields.

Growing community of inventors

Kawasaki, Japan

Tomohiko Tsutsumi