Ngk Insulators, Inc.

Dowa Electronics Materials Co., Ltd.

Other

Mitsubishi Heavy Industries Limited

Riken Corporation

Dowa Mining Co., Ltd.

Mitsubishi Heavy Industries Thermal Systems, Ltd.

Mitsubishi Heavy Industries Automotive Thermal Systems Co., Ltd.

Kazuo Tsubouchi

Ngk Isulators, Ltd.

Tomohiko Shibata

Mitsuhiro Tanaka

Keiichiro Asai

Osamu Oda

Yukinori Nakamura

Shigeaki Sumiya

Yuji Hori

Tetsuya Ikuta

Jo Shimizu

Ryo Sakamoto

Daisuke Hino

Junichiro Hara

Kei Kosaka

Teruyo Nagai

Yasuhiro Watanabe

Takayuki Kobayashi

Atsushi Suzuki

Hideki Hirayama

Yuichiro Imanishi

Kazuya Masu

Nobuya Nakagawa

Koji Nakado

Tatsunori Toyota

Kazuyuki Kamiya

Takashi Egawa

Hirotsugu Kohigashi

Takehiro Miyaji

Kazuyoshi Sugai

Hiroyuki Yamashita

Tsuneo Ito

Shuichi Tomabechi

Kenichi Terauchi

Takumi Suetsugu

Michio Yokoyama

Kazuma Soeta

Hiroaki Sasaki

Akihiro Wakahara

Takashi 405 Green Heights Ieiyakushi Egawa

Asai Keiichiro

Mitsuhiro 703 Arthills-Kirigaoka Minamikan Tanaka

A deep ultraviolet light-emitting element of this disclosure includes, in this order, an n-type semiconductor layer; a light-emitting layer; and a p-type semiconductor layer. An emission spectrum of the deep ultraviolet light-emitting element has a primary emission peak wavelength in a wavelength range of 200 nm or more and 350 nm or less, and a blue-violet secondary light emission component having a relative emission intensity of 0.03% to 10% across a wavelength range of 430 to 450 nm, a yellow-green secondary light emission component having a relative emission intensity of 0.03 to 10% across a wavelength range of 540 to 580 nm, when the relative emission intensities are expressed relative to an emission intensity at the primary emission peak wavelength taken as 100%. The ratio of an emission intensity at a wavelength of 435 nm to an emission intensity at a wavelength of 560 nm is 0.5 to 2.

Deep ultraviolet light-emitting element

Provided are a deep ultraviolet light emitting element that exhibits both high light output power and an excellent reliability, and a method of manufacturing the same. A deep ultraviolet light emitting elementof this disclosure comprises an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layers, on a substrate, in this order. The light-emitting layeremits deep ultraviolet light. The p-type semiconductor layerscomprise a p-type first layerA and a p-type contact layerB directly on the p-type first layerA. The p-type contact layerB is made of a non-nitride p-type group III-V or p-type group IV semiconductor material, and functions as a reflective layer to reflect the deep ultraviolet light. The reflectance of light at a wavelength of 280 nm incident on the p-type contact layerB from the p-type first layerA is 10% or higher.

Deep ultraviolet light emitting element and method of manufacturing the same

Provided is a Group III nitride epitaxial substrate that can suppress the occurrence of breakage during a device formation process and a method for manufacturing the same. A Group III nitride epitaxial substrate according to the present invention includes a Si substrate, an initial layer in contact with the Si substrate, and a superlattice laminate, formed on the initial layer, including a plurality of sets of laminates, each of the laminates including, in order, a first layer made of AlGaN with an Al composition ratio greater than 0.5 and 1 or less and a second layer made of AlGaN with an Al composition ratio greater than 0 and 0.5 or less. The Al composition ratio of the second layer progressively decreases with distance from the substrate.

Group III nitride epitaxial substrate and method for manufacturing the same

The present invention is provided with: an evaporator () in which a compressed refrigerant is vaporized; an expansion valve expanding the refrigerant before the refrigerant flows into the evaporator (); refrigerant pipes () that connect the evaporator () and the expansion valve to each other; and a unit case () housing the evaporator (), the expansion valve, and the refrigerant pipes (), and including an air flow channel () for passing air through the evaporator (). A refrigerant pipe housing chamber () is disposed in the unit case (), and housing the refrigerant pipes (). The refrigerant pipe housing chamber () is partitioned while being isolated from the housing section for the evaporator () and the air flow channel (). The outer circumferential surfaces of the refrigerant pipes () are separated from the inner wall surface of the refrigerant pipe housing chamber (). Furthermore, the thickness (t) of the wall of the refrigerant pipe housing chamber () is greater than the thickness (t) of the wall of the unit case ().

Air conditioning device for vehicle

An epitaxial substrate for an electronic device, in which a lateral direction of the substrate is defined as a main current conducting direction and a warp configuration of the epitaxial substrate is adequately controlled, as well as a method of producing the epitaxial substrate. Specifically, the epitaxial substrate for an electron device, including: a Si single crystal substrate; and a Group III nitride laminated body formed by epitaxially growing plural Group III nitride layers on the Si single crystal substrate, wherein a lateral direction of the epitaxial substrate is defined as a main current conducting direction, is characterized in that the Si single crystal substrate is a p-type substrate having a specific resistance value of not larger than 0.01 &#x3a9;&#xb7;cm.

Epitaxial substrate for electronic device and method of producing the same

A centrifugal blower includes a centrifugal fan; an electric motor that rotationally drives the centrifugal fan; a fan case that has an air inlet and an air outlet and that internally accommodates the centrifugal fan; and an electric motor case () that has a cylinder () accommodating the electric motor and a flange portion () extending radially outward from the cylinder () and that is fitted to the fan case. The flange portion () is provided with a ring-shaped rib portion () that protrudes from the flange portion (); the ring-shaped rib portion () is provided with a plurality of slits (and) that extend from the flange portion () in the axial direction of the cylinder (); and the flange portion () between the ring-shaped rib portion () and the cylinder () is inclined in a circumferential direction toward the slits (and).

Centrifugal blower and vehicle air conditioner provided with the same

Provided is a vehicle air conditioner which includes a simple water-proofing structure that is capable of preventing flooding of a vehicle cabin from mating surfaces, etc. of expansion-valve covers and top and bottom divided cases of an air conditioning unit (HVAC unit) without employing a water-proofing cover, or the like. In a vehicle air conditioner in which expansion-valve covers (and) that are horizontally divided into two parts are provided at an outer surface side of top and bottom divided cases of an air conditioning unit disposed in the vehicle cabin so as to bridge mating surfaces of the cases; an expansion valve can be disposed inside the expansion-valve covers (and); and, in addition, the interior of the expansion-valve covers (and) communicates with an engine compartment via an opening provided in a toe board, step portions () in which inner surface sides () are made lower and outer surface sides () are made higher are formed at the top and bottom mating surfaces of the expansion-valve covers (and).

Vehicle air conditioner case

A III nitride semiconductor light emitting device with improved light emission efficiency achieved without significantly increasing forward voltage by achieving both good ohmic contact between an electrode and a semiconductor layer, and sufficient functionality of a reflective electrode layer, and a method for manufacturing the same. The III nitride semiconductor light emitting device has a III nitride semiconductor laminate including an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer; an n-side electrode, a p-side electrode; and a composite layer having a reflective electrode portion and a contact portion made of AlGaN (0&#x2266;x&#x2266;0.05) on a second surface of the III nitride semiconductor laminate. The second surface is opposite to a first surface on the light extraction side.

III nitride semiconductor light emitting device and method for manufacturing the same

In heteroepitaxially growing a group-III nitride semiconductor on a Si single crystal substrate, the occurrence of cracks initiating in the wafer edge portion can be suppressed. Region A is an outermost peripheral portion outside the principal surface, being a bevel portion tapered. Regions B and C are on the same plane (the principal surface), region B (mirror-surface portion) being the center portion of the principal surface, and region C a region in the principal surface edge portion surrounding region B. The principal surface has a plane orientation, and in region B, is mirror-surface-finished. Region B occupies most of the principal surface of this Si single crystal substrate, and a semiconductor device is manufactured therein. Region C (surface-roughened portion) has a plane orientation as with region B, however, region B is mirror-surface-finished, whereas region C is surface-roughened.

Epitaxial growth substrate, semiconductor device, and epitaxial growth method

An epitaxial substrate for electronic devices, in which current flows in a lateral direction and of which warpage configuration is properly controlled, and a method of producing the same. The epitaxial substrate for electronic devices is produced by forming a bonded substrate by bonding a low-resistance Si single crystal substrate and a high-resistance Si single crystal substrate together; forming a buffer as an insulating layer on a surface of the bonded substrate on the high-resistance Si single crystal substrate side; and producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate. The resistivity of the low-resistance Si single crystal substrate is 100 &#x3a9;&#xb7;cm or less, and the resistivity of the high-resistance Si single crystal substrate is 1000 &#x3a9;&#xb7;cm or more.

Epitaxial substrate for electronic device comprising a high resistance single crystal substrate on a low resistance single crystal substrate, and method of manufacturing

A Group III nitride epitaxial laminate substrate comprising a substrate, a buffer and a main laminate in this order, wherein the buffer includes an initial growth layer, a first superlattice laminate and a second superlattice laminate in this order, the first superlattice laminate includes five to 20 sets of first AlN layers and second GaN layers, the first AlN layers and the second GaN layers being alternately stacked, and each one set of the first AlN layer and the second GaN layer has a thickness of less than 44 nm, the second superlattice laminate includes a plurality of sets of first layers made of an AlN material or an AlGaN material and second layers made of an AlGaN material having a different band gap from the first layers, the first and second layers being alternately stacked.

Group III nitride epitaxial laminate substrate

To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact.

Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same

An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a BAlGaInN material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a BAlGaInN material and a second layer made of a BAlGaInN material having a different band gap from the first layer.

An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer.

Devices and techniques related to UV light-emitting devices that can be implemented in ways that improve the light-emitting efficiency of an UV light-emitting device using a group III nitride semiconductor.

Optical semiconductor device and method of manufacturing the same

Growing community of inventors

Kasugai, Japan

Tomohiko Shibata