Toyota Jidosha Kabushiki Kaisha

Jtekt Corporation

Jfe Steel Corporation

Tomohiko Sato

Takeo Yamamoto

Masaru Senoo

Yoshikazu Kawabata

Takumi Matsumoto

Atsushi Ando

Kaname Onoda

A semiconductor device includes: a semiconductor substrate; a main electrode; a peripheral electrode; an insulating protective film; a surface metallic layer; and a solder layer, wherein the semiconductor substrate includes: a first region of a first conductive-type in contact with the main electrode on a main contact surface; a second region of a first conductive-type in contact with the peripheral electrode on a peripheral contact surface; and a third region of a second conductive-type provided under the first region, under the second region, and circumferentially outward of the second region, and a circumferentially-outward end of the metallic layer and a circumferentially-outward end of the solder layer are located more circumferentially inward than the circumferentially-outward end of the peripheral electrode.

Semiconductor device

A semiconductor device includes a semiconductor substrate, a front surface electrode provided on a front surface of the semiconductor substrate, a solder layer, and a metal member fixed to a front surface of the front surface electrode via the solder layer. The solder layer includes an inner solder portion positioned inner than an end portion of the metal member and an outer solder portion positioned outer than the end portion of the metal member, relative to a direction along the front surface of the semiconductor substrate. The semiconductor substrate includes an inner substrate portion positioned below the inner solder portion and an outer substrate portion positioned below the outer solder portion. A density of carriers that flow from the outer substrate portion to the front surface electrode is lower than a density of carriers that flow from the inner substrate portion to the front surface electrode.

The present teaching provides a semiconductor device capable of relaxing stress transferred to a contact region during wire bonding and improving reliability of wire bonding. A semiconductor device comprises contact regions, an interlayer insulating film, an emitter electrode, and a stress relaxation portion. The contact regions are provided at a certain interval in areas exposing at a surface of a semiconductor substrate. The interlayer insulating film is provided on the surface of the semiconductor substrate between adjacent contact regions. The emitter electrode is provided on an upper side of the semiconductor substrate and electrically connected to each of the contact regions. The stress relaxation portion is provided on an upper surface of the emitter electrode in an area only above the contact regions. The stress relaxation portion is formed of a conductive material. A Young's modulus of the material of the stress relaxation portion is lower than a Young's modulus of the material of the emitter electrode.

Semiconductor device with stress relaxation during wire-bonding

In a switching element, a first region that is exposed on an upper surface of a semiconductor substrate, a second region that is exposed on the upper surface of the substrate and extends to below the first region, and a third region that is formed below the second region, are formed on the substrate. A trench is formed in the upper surface of the substrate. A gate electrode has a first portion that extends from a depth of the first region to a depth of the third region at at least a portion in the trench formed in an area where the first region is exposed, and a second portion that is formed to a depth of the second region, and does not reach the depth of the third region, at at least a portion in the trench formed in an area where the second region is exposed.

Switching element

A constant velocity universal joint is provided, having a hollow outer joint member, an inner joint member, an outer roller including a cylindrical surface, an inner roller including a concave sphere, and plural leg shafts each including a convex sphere formed in a tip portion and engaging with the concave sphere, where the cylindrical surface of the outer roller satisfies the following:1&#x3e;(1&#x2212;cos &#x3b8;)/2+&#x3bc;+&#x3bc;12&#x3e;3(1&#x2212;cos &#x3b8;)/2&#x2212;&#x3bc;+&#x3bc;1,where Windicates a length of the cylindrical surface from a center of the leg shaft and an intersection of the cylindrical surface and an upper side taper portion of the outer roller, Windicates a length of the cylindrical surface from the center of the leg shaft and an intersection of the cylindrical surface and a lower side taper portion of the outer roller, and &#x3b8; indicates a maximum joint angle.

Constant velocity universal joint

A frictionally press-bonded member includes a steel pipe, and a stab. The steel pipe has opposite ends. The stab is frictionally press-bonded to at least one of the opposite ends of the steel pipe. The steel pipe is subjected to a normalizing treatment before being frictionally press-bonded to the stab.

Growing community of inventors

Toyota, Japan

Tomohiko Sato