Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Toshiba Lighting & Technology Corporation

Japan Display West Inc.

Kabushiki Kaisha Toshiba

Japan Display Inc.

Tomohiko Sato

Takeya Takeuchi

Naoyuki Itakura

Shunpei Yamazaki

Yasuhiko Takemura

Satoshi Teramoto

Shinya Sasagawa

Mitsunori Sakama

Junichiro Yamamoto

Shigeharu Monoe

Tomoyuki Fukano

Werapong Jarupoonphol

Shigefumi Sakai

Hideomi Suzawa

Atsuo Isobe

Yoshitoshi Kida

Koji Ono

Yoshiharu Nakajima

Makoto Sakai

Shigeru Osawa

Masahiko Naito

Yoshihiro Kusuyama

Tomoo Mizukami

Yuichiro Takahara

Daisuke Sakai

Ryo Nakagawa

Keiko Saito

Masao Segawa

Shota Kawarazaki

Yuumi Ozawa

Kazuyuki Saga

Atsuo Suzuki

Masashi Kokubo

[Object] To achieve both prevention of overcharging of the battery and convenience of the user. [Solution] An information processing device includes: a charged capacity detection unit configured to detect a charged capacity of a battery; a charging control unit configured to control a charging circuit; and a specification unit configured to specify when discharge of the battery starts. The charging control unit performs charging suppression control on the charging circuit such that the battery is charged to a preparatorily charged capacity that is lower than a fully charged capacity of the battery, on the basis of the charged capacity detected by the charged capacity detection unit, the charging of the battery stops when the charged capacity of the battery reaches the preparatorily charged capacity, and the charging of the battery restarts from the preparatorily charged capacity before discharge of the battery starts.

Information processing device, information processing system, and charging method

A display device having a pixel section including a plurality of pixel circuits arrayed in a matrix, a plurality of scan lines, a plurality of capacity lines, a plurality of signal lines, a drive circuit, and a generation circuit generating a small amplitude common voltage signal switching in level at a predetermined cycle, wherein each pixel circuit arranged at the pixel section contains a display element having a first pixel electrode and a second pixel electrode and a storage capacitor having a first electrode and a second electrode, the first pixel electrode of the display element, the first electrode of the storage capacitor, and one terminal of the switching element are connected, the second electrode of the storage capacitor is connected to the capacity lines arrayed in a corresponding row, and the common voltage signal is applied in a second pixel electrode of the display element.

Display device and drive method providing improved signal linearity

The present invention provides a liquid crystal display device including: a pixel array including a plurality of scanning lines arranged in rows, a plurality of signal lines arranged in columns, a plurality of liquid crystal elements arranged in a matrix corresponding to an intersection of each scanning line and each signal line, and a plurality of common connection lines arranged one by one corresponding to the liquid crystal elements of each line; a scanning line drive circuit; a signal line drive circuit; and a common connection line drive circuit electrically separating, from each other, one or a plurality of common connection lines (first common connection lines), and a plurality of common connection lines (second common connection lines), and electrically connecting the plurality of second common connection lines to each other to independently drive the first common connection line and the second connection lines from each other.

Liquid crystal display device, and method of driving liquid crystal display device

Light emitting diode lamp

A liquid crystal display device is provided, which may reduce flicker in all display gray levels. The liquid crystal display device includes a scan line drive circuit, a signal line drive circuit and a common connection line drive circuit. The common connection line drive circuit applies a voltage, the voltage having polarity opposite to polarity of the signal line, to a common connection line corresponding to a liquid crystal element as a selection object in a write period for writing into the liquid crystal element as a selection object, and applies one or multiple voltages, each voltage having a value different from a center value between an upper limit value and a lower limit value of voltages applied to the common connection lines in the write period, to the common connection lines in a holding period after writing into the liquid crystal element as a selection object is performed.

Liquid crystal display device with common connection line voltage adjusted in a holding period for an improved performance

It is an object of an invention disclosed in the present specification to provide a transistor having low contact resistance. In the transistor, a semiconductor film including an impurity element imparting P-type or N-type conductivity, an insulating film formed thereover, and an electrode or a wiring that is electrically connected to the semiconductor film through a contact hole formed at least in the insulating film are included; the semiconductor film has a first range of a concentration of the impurity element (1&#xd7;10/cmor less) that is included in a deeper region than predetermined depth, and a second range of a concentration of the impurity element (more than 1&#xd7;10/cm) that is included in a shallower region than the predetermined depth; and a deeper region than a portion in contact with the electrode or the wiring in the semiconductor film is in the first range of the concentration of the impurity element.

Method of manufacturing semiconductor device comprising the step of doping semiconductor film through contact hole

A display device having a pixel section pixel circuits, scan lines, capacity lines, a drive circuit driving the scan lines and the capacity lines selectively, a generation circuit generating a common voltage signal switching in level at a predetermined cycle, and a correction circuit correcting the signals driving the capacity lines of the drive circuit, wherein each pixel circuit contains a display element and holding capacitor, a first pixel electrode of the display element pixel cell, a first electrode of the holding capacitor, and one terminal of the switching element are connected, a second electrode of the holding capacitor is connected to the capacity lines arrayed in a corresponding row, and the common voltage signal is applied in a second pixel electrode of the display element. The correction circuit has a monitor circuit monitoring the pixel potential of the pixel section and correcting a signal driving the capacity lines taking into consideration the optical characteristics of the display element based on the monitor result of the monitor circuit.

Display device

It is an object of the present invention to provide a method for manufacturing a highly reliable semiconductor device with preferable yield. In the invention, two-step etching is performed when selectively removing an interlayer insulating film with at least two layers constituting a semiconductor device, and forming an opening. One feature of the invention is that at least either one of a first gas (a first etching gas) and a second gas (a second etching gas) used at the time of the two-step etching is added with an inert gas.

Method for manufacturing a semiconductor device

Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700&deg; C. in a dinitrogen monoxide atmosphere, or in an NH or N H atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700&deg; C. in an N O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700&deg; C. in a hydrogen nitride atmosphere (N O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.

Methods of heat treatment and heat treatment apparatus for silicon oxide films

An etching method and a device therefor are provided to detect the etching end point with high accuracy and reproducibility. In an etching method and device, in dry etching, a variation of a self-bias voltage as a time elapses is measured, and a time where a differentiation value becomes 0 when the variation of the self-bias voltage is differentiated is regarded as an end point.

Etching method and etching device

Silicon oxide films which are good as gate insulation films are formed by subjecting a silicon oxide film which has been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in a dinitrogen monoxide atmosphere, or in an NH.sub.3 or N.sub.2 H.sub.4 atmosphere, while irradiating with ultraviolet light, reducing the hydrogen and carbon contents in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular. Furthermore, silicon oxide films which are good as gate insulating films have been formed by subjecting silicon oxide films which have been formed on an active layer comprising a silicon film by means of a PVD method or CVD method to a heat treatment at 300-700.degree. C. in an N.sub.2 O atmosphere (or hydrogen nitride atmosphere) while irradiating with ultraviolet light, and then carrying out a heat treatment at 300-700.degree. C. in a hydrogen nitride atmosphere (N.sub.2 O atmosphere), and reducing the amount of hydrogen and carbon in the silicon oxide film and introducing nitrogen into the boundary with the silicon film in particular.

Methods of heat treating silicon oxide films by irradiating ultra-violet

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Kanagawa, Japan

Tomohiko Sato