Joled Inc.

Panasonic Corporation

Panasonic Liquid Crystal Display Co., Ltd.

Tomohiko Oda

Takahiro Kawashima

Shinichiro Ishino

Yasuhiro Yamauchi

Koyo Sakamoto

Mineki Hasegawa

Hikaru Nishitani

Yasuhiro Sekimoto

Genshiro Kawachi

Toshiyuki Akiyama

Yui Saitou

Kenichirou Nishida

Muneharu Sato

An organic electroluminescence element including an anode, a light-emitting layer, a functional layer, and a cathode stacked in this order. The light-emitting layer and the functional layer are in contact with each other. Hole mobility of the light-emitting layer is greater than electron mobility of the light-emitting layer. The electron mobility of the light-emitting layer is equal to or greater than an effective electron mobility of the functional layer. A highest occupied molecular orbital (HOMO) level of a first functional material included in the light-emitting layer is at least 0.4 eV greater than a HOMO level of a second functional material included in the functional layer.

Organic el element, and organic el display panel including light- emitting layer and functional layer with specific hole and electron mobilities relationship

According to one embodiment, a solution for organic EL contains a mixed solvent of two or more kinds of organic solvents which contain at least a first organic solvent and a second organic solvent, and an organic EL contributing material dissolved into the mixed solvent. The coordinates (HSP coordinates) specified by Hansen solubility parameters of the first organic solvent are Hd in a range of 17.5 to 19.5 (J/cm), Hp in a range of 3.5 to 5.5 (J/cm)and Hh in a range of 3.5 to 5.5 (J/cm). The HSP coordinates of the second organic solvent are Hd in a range of 17.5 to 19.5 (J/cm), Hp in a range of 0 to 2.0 (J/cm), and Hh in a range of 0.5 to 2.5 (J/cm).

Solution for organic EL, method of producing organic EL device and organic EL  device

Disclosed is a method for manufacturing an organic EL display panel in which a plurality of organic electroluminescence elements each including an organic layer are arranged on an upper side of a substrate. The method includes applying an ink obtained by dissolving or dispersing an organic material in a solvent to a preset application area over the substrate, and cooling the ink applied in the applying within a period until the ink is dried, to lower an ink temperature to a second temperature lower than a first temperature of the ink at a time of application thereof.

Method and apparatus for manufacturing organic el display panel

According to one embodiment, an ink for organic EL includes an organic EL contributing material and an organic solvent. A relative energy difference RED based on Hansen solubility parameters which attribute to the organic EL contributing material and the organic solvent, respectively, is less than 0.5.

Ink for organic EL

A method of producing an organic electroluminescent ink includes reducing ozone contained in an organic electroluminescent mixture comprising an organic electroluminescent material and a solvent.

Method of producing organic EL ink and method of manufacturing organic EL device

A method of manufacturing a substrate having a thin film thereabove includes: forming a thin film above the substrate; and crystallizing at least a predetermined area of the silicon thin film into a crystallized area through relative scan of the silicon thin film which is performed while the thin film is being irradiated with a continuous wave light beam, wherein in the crystallizing, a projection of the light beam on the thin film has a major axis in a direction crossing a direction of the relative scan, and the formed crystallized area includes a strip-shaped first area extending in the direction crossing the direction of the relative scan and a second area adjacent to the strip-shaped first area, the strip-shaped first area including crystal grains having an average grain size larger than that of crystal grains in the second area.

Method of manufacturing substrate having thin film thereabove, method of manufacturing thin-film-device substrate, thin-film substrate, and thin-film-device substrate

A method of thin film formation includes: preparing a substrate; forming a thin film above the substrate; and crystallizing the thin film by irradiating the thin film with a light beam, in which the crystallizing includes steps of: crystallizing the thin film in a first region into a first crystalline thin film by irradiating the first region while scanning a first light beam relative to the substrate, the first region including at least one of: edge portions of the substrate; and a region through which a cutting line passes when the substrate is cut; and subsequently crystallizing the thin film in a second region into a second crystalline thin film by irradiating at least the second region while scanning a second light beam relative to the substrate, and the thin film has a higher absorption ratio of the second light beam than that of the first crystalline thin film.

Substrate having thin film and method of thin film formation

A crystallinity evaluation method of evaluating crystallinity of a semiconductor film formed above a substrate includes following steps. First, a peak waveform of a Raman band in a Raman spectrum of the semiconductor film is obtained using Raman spectrometry. The Raman band corresponds to a phonon mode unique to the semiconductor film. The peak waveform is a wavelength range having a peak of the Raman band. Next, a first waveform is generated by fitting the obtained peak waveform by Gauss function. Then, a peak value of the first waveform is extracted. Then, a second waveform is generated by fitting the obtained peak waveform by Lorenz function based on the extracted peak value. Then, a peak value, a FWHM, and/or a wavelength indicating the peak value regarding the generated second waveform are obtained. Then, crystallinity of the semiconductor film is evaluated based on the obtained information.

Crystallinity evaluation method, crystallinity evaluation device, and computer software thereof

A thin-film device includes: a first device unit having a first gate electrode and a first crystalline silicon thin film located opposite to the first gate electrode; and a second device unit having a second gate electrode and a second crystalline silicon thin film located opposite to the second gate electrode. The first crystalline silicon thin film includes a strip-shaped first area and a second area smaller than the strip-shaped first area in average grain size. The first device unit has, as a channel, at least a part of the strip-shaped first area. The second silicon thin film includes a second crystalline area smaller than the strip-shaped first area in average grain size. The second device unit has the second crystalline area as a channel. The strip-shaped first area includes crystal grains in contact with the second area on each side of the strip-shaped first area.

Thin-film device, thin-film device array, and method of manufacturing thin-film device

A method of crystallizing a silicon thin film, which enables uniforming the size of a crystalline grain of the silicon thin film, includes: a second process of stacking, on a substrate, a first gate electrode having a first reflectivity; a third process of stacking a second gate electrode on the first gate electrode, the second gate electrode having a second reflectivity lower than the first reflectivity and including a top face having an area smaller than an area of the top face of the first gate electrode; a fourth process of stacking a gate insulation film to cover a first region and a second region; a fifth process of stacking a noncrystalline silicon thin film on the stacked gate insulation film; and a sixth process of crystallizing the noncrystalline silicon thin film by irradiating the noncrystalline silicon thin film from above with a laser beam.

Method of crystallizing silicon thin film and method of manufacturing silicon thin-film transistor device

A thin-film transistor device includes a gate electrode formed above a substrate, a gate insulating film formed on the gate electrode, a crystalline silicon thin film that is formed above the gate insulating film and has a channel region, an amorphous silicon thin film formed on the crystalline silicon thin film, and a source electrode and a drain electrode that are formed above the channel region, and the crystalline silicon thin film has a half-width of a Raman band corresponding to a phonon mode specific to the crystalline silicon thin film of 5.0 or more and less than 6.0 cm, and an average crystal grain size of about 50 nm or more and 300 nm or less.

Thin-film transistor device

A crystalline silicon thin film is formed by irradiating a silicon thin film with a laser beam. The laser beam is a continuous wave laser beam. An intensity distribution of the laser beam in a first region about a center of the intensity distribution is symmetric on an anterior side and a posterior side of the center. The intensity distribution in a second region about the center is asymmetric on the anterior side and the posterior side. The first region is from the maximum intensity of the laser beam at the center to an intensity half of the maximum intensity. The second region is at most equal to the half of the maximum intensity of the laser beam. In the second region, an integral intensity value on the posterior side is larger than on the anterior side.

Manufacturing method for thin film semiconductor device, manufacturing method for thin film semiconductor array substrate, method of forming crystalline silicon thin film, and apparatus for forming crystalline silicon thin film

Growing community of inventors

Osaka, Japan

Tomohiko Oda