Tokyo Electron Limited

Preferred Networks, Inc.

Tomohiko Niizeki

Masanobu Honda

Maju Tomura

Takayuki Katsunuma

Yoshihide Kihara

Masaki Watanabe

Sho Kumakura

Shinya Ishikawa

Takahiko Kato

Hironari Sasagawa

Yusuke Takino

Kenta Ono

Yuta Nakane

Hironori Moki

Tomoki Komatsu

Daisuke Motoki

Kosuke Nakago

An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.

Etching method, substrate processing apparatus, and substrate processing system

With respect to an inference method performed by at least one processor, the method includes inputting, by the at least one processor, into a learned model, non-processed object image data of a second object and data related to a second process for the second object, and inferring, by the at least one processor using the learned model, processed object image data of the second object on which the second process has been performed. The learned model has been trained so that an output obtained in response to non-processed object image data of a first object and data related to a first process for the first object being input approaches processed object image data of the first object on which the first process has been performed.

Learning device, inference device, and learned model

A method for etching a film includes: supplying a precursor gas to the substrate, thereby forming a precursor layer on a substrate; and etching the film with a chemical species from plasma formed from a processing gas so as to increase a depth of the opening, and form a protective region from the precursor layer with the chemical species or another chemical species from the plasma. A plurality of cycles each including the supplying the precursor gas and the etching the film is executed. A temperature of the substrate during execution of the etching the film included in at least one cycle of the plurality of cycles and a temperature of the substrate during execution of the etching the film included in at least one other cycle of the plurality of cycles are set to be different from each other.

Method for etching film and plasma processing apparatus

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Miyagi, Japan

Tomohiko Niizeki