Sharp Kabushiki Kaisha Corporation

Tomohiko Iwane

Kenji Toyosawa

Kazuhiko Fukuta

Masahiko Monzen

Nakae Nakamura

Keiichi Inomo

Takurou Asazu

A semiconductor device includes (i) a tape base material, (ii) a wiring pattern, (iii) a semiconductor element which is electrically connected with the wiring pattern, (iv) a top-side insulating protective film which covers a top surface of the tape base material and has an top-side opening section provided in a region where the top-side insulating protective film faces the semiconductor element, and (v) a reverse-side insulating protective film which covers a reverse surface of the tape base material and has a reverse-side opening section provided on a reverse side below the top-side opening section. The top-side insulating protective film has a protruding opening section extending outwardly from the region. An opening of the reverse-side opening section is 1.00 time to 8.50 times larger in an area than the region.

Semiconductor device and method for manufacturing same

In a connection structure of the present invention, the wiring board including a solder resist covering part which covers the wiring pattern with solder resist, the solder resist covering part having a solder resist opening or solder resist openings which expose(s) the wiring board connection terminals therethrough, and the solder resist opening or the solder resist openings surrounding at least one part of the solder resist covering part. Therefore, the wiring patterns are not unnecessarily exposed. That is, without disadvantageous contact between each wiring pattern and the semiconductor element, the semiconductor element can be mounted on the wiring board, and thus, the semiconductor device is reliable.

Connection structure for connecting semiconductor element and wiring board, and semiconductor device

A tape carrier type semiconductor device comprising: a long flexible insulating tape; and a plurality of semiconductor devices sequentially arranged on one surface of the tape, wherein each semiconductor device has a wiring pattern and a semiconductor element, and wherein each semiconductor device has either a hole or a target mark inside a predetermined region enclosed by an outline of the semiconductor device, the outline being for die-cutting into pieces, the hole being bored through the tape for indicating that the semiconductor device is a non-defective, the target mark not being bored through the tape for indicating that the semiconductor device is a defective.

Tape carrier type semiconductor device and method of producing the same

A semiconductor device of the present invention includes a film-like flexible substrate having formed thereon a wiring pattern, external connection terminals formed at both end portions of the flexible substrate; and a semiconductor element mounted on a surface side of the flexible substrate, wherein a folded part, which is folded down in U-shape to a back surface side of the flexible substrate, is formed in a fixed state at least at one end portion of the flexible substrate. With this structure, the semiconductor device is COF mounted, and, for example, in its application to a liquid crystal module wherein the semiconductor device is provided so as to face a liquid crystal panel, the external connection terminals of the flexible substrate can be connected to an inner surface of a module main body for a liquid crystal panel in a state the semiconductor element of the semiconductor device faces the inside of the module main body. As a result, since the semiconductor element can be mounted without being projected to the outside of the module main body, the liquid crystal module can be made thinner for the thickness of the semiconductor element.

Semiconductor device, liquid crystal module adopting same, method of manufacturing liquid crystal module, and electronic equipment adopting same

A slit is formed in a polyimide substrate and a copper wiring pattern is formed on the surface of the polyimide substrate. Moreover, solder resist, which has a young's modulus in the range of 5 kgf/mm to 70 kgf/mm and contains a filler in the range of 10 wt % to 40 wt %, is formed on the copper wiring pattern. Thus, the copper wiring pattern becomes less susceptible to disconnection, and it is possible to provide a flex TCP semiconductor device with high manufacturing yield.

Tape-carrier-package semiconductor device and a liquid crystal panel display using such a device as well as a method for testing the disconnection thereof

The interconnect pattern of the tape carrier in a COF is gold plated other than the part covered by solder resists. The inner leads of the tape carrier and the corresponding gold bumps of electrodes of the semiconductor chip are thermally compressed so that the inner leads penetrate into the gold bumps, thus creating gold-gold compression bonding.

Growing community of inventors

Nara, Japan

Tomohiko Iwane