Kioxia Corporation

Tomohiko Ito

Kazuto Uehara

According to one embodiment, a semiconductor memory device includes a first memory cell and a first boosting circuit. The first boosting circuit generates a first voltage, a second voltage, and a third voltage lower than the second voltage at a first output terminal. The first, second and third voltages is used for a write operation. The write operation includes a first program operation and a first verify operation executed after the first program operation. The first boosting circuit generates the first voltage at the first output terminal during the first program operation, generates the third voltage at the first output terminal at end of the first program operation, generates the second voltage at the first output terminal during the first verify operation, and then generates the first voltage to the first output terminal during the first verify operation.

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Kawasaki Kanagawa, Japan

Tomohiko Ito