Seiko Epson Corporation

Tomohiko Hayashi

Yoshifumi Tsunekawa

Takunori Iki

Hidenori Kawata

Kiyotaka Koide

There is provided an electro-optical device including, above a substrate, data lines extending in a first direction, scanning lines extending in a second direction and intersecting the data lines, pixel electrodes and thin film transistors disposed so as to correspond to intersection regions of the data lines and the scanning lines; and storage capacitors electrically connected to the thin film transistors and the pixel electrodes, the thin film transistors including semiconductor layers having channel regions which extend in a longitudinal direction and channel adjacent regions which extend further from the channel regions in the longitudinal direction, and the scanning lines including light-shielding parts disposed at sides of the channel regions.

Liquid crystal display with capacitive light shield between data line and pixel electrode

Electro-optical device and electronic apparatus

The invention provides a substrate device having thin film transistors (TFTs), each including a semiconductor layer and capacitors formed above the TFTs, that are provided on a substrate. Each of the capacitors can include a first electrode electrically connected to a part of the semiconductor layer, a second electrode arranged to face the first electrode, and a dielectric film including a nitride film arranged between the first electrode and the second electrode on the substrate. Further, the nitride film has an aperture facing the semiconductor layer as seen in plan view. Accordingly, it is possible to effectively hydrogenate the semiconductor layer using the aperture.

System and method of manufacturing a substrate device

An electro-optical device includes, above a substrate, data lines extending in a first direction, scanning lines which extend in a second direction and which cross the data lines, pixel electrodes and thin film transistors disposed so as to correspond to regions in which the data lines and the scanning lines cross, storage capacitors electrically connected to the thin film transistors and the pixel electrodes, and a shield layer disposed between the data lines and the pixel electrodes. An upper electrode and a lower electrode between which a dielectric film forming each storage capacitor is supported including a first portion laminated along a plane parallel with one surface of the substrate and a second portion laminated along a plane orthogonal to the surface of the substrate, the sectional shape of the capacitor including a projecting shape.

A semiconductor layer, including a source region, a channel region, and a drain region, is formed on a substrate, and a gate insulation film, formed of a silicon oxide film, is formed on the semiconductor layer. Subsequently, nitrogen atoms are introduced in the gate insulation film so that the nitrogen atoms exist in at least one of the silicon oxide film and an interface between the silicon oxide film and the semiconductor layer. Thereafter, a gate electrode film is formed on the gate insulation film. With this arrangement, good transistor characteristics can be maintained for a long period of time in a substrate device on which a TFT is formed, and further it is difficult for the substrate device to be affected by an environment in which it is used, such as by humidity, temperature, and the like.

Growing community of inventors

Chino, Japan

Tomohiko Hayashi