Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Tomohiko Asatsuma

Satoko Iida

Ryosuke Nakamura

Yoshiaki Kitano

Toshiaki Ono

Koshi Okita

Minoru Ishida

Masaki Sakakibara

Takeshi Yanagita

Yorito Sakano

Yoshiaki Masuda

Masaaki Takizawa

Yusuke Matsumura

Shogo Furuya

Naosuke Asari

Ryoko Kajikawa

Kengo Nagata

A high degree of phase difference detection accuracy can be obtained using a phase difference pixel with a simpler configuration. A solid-state image-capturing device includes a pixel array unit in which a plurality of pixels including a phase difference pixel which is a pixel for focal point detection and an image-capturing pixel which is a pixel for image generation are arranged in a two-dimensional array. In this case, a predetermined layer between a light shielding layer and a micro lens formed in the image-capturing pixel has a higher refraction index than a refraction index of the predetermined layer formed in the phase difference pixel. The technique of the present disclosure can be applied to, for example, a back-illuminated-type solid-state image-capturing device and the like.

Solid-state image-capturing device and production method thereof, and electronic appliance

An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.

Imaging element and electronic device with light shielding portion between pixels

There is provided an imaging device capable of further improving image quality of a subject, particularly a lesion portion such as cancer. There is provided an imaging device including: a first substrate including a first pixel array unit in which a plurality of pixels having at least a first photoelectric conversion unit is arranged in a two-dimensional manner, a first wiring layer, and a first support layer stacked in this order; and a second substrate including a second pixel array unit in which a plurality of pixels having at least a second photoelectric conversion unit is arranged in a two-dimensional manner, a second wiring layer, and a second support layer stacked in this order, in which the first support layer and the second support layer are bonded to each other to form a stacked structure, and at least one of the support layers includes an antireflection layer.

Imaging device and electronic device

Imaging element, imaging element driving method, and electronic device

The present technology relates to a solid-state imaging element, a solid-state imaging element package, and electronic equipment that can suppress occurrence of flares. The solid-state imaging element includes an effective pixel region and a peripheral circuit region. The effective pixel region includes a plurality of pixels arranged two-dimensionally in a matrix pattern. The peripheral circuit region is provided around the effective pixel region. The effective pixel region has a pixel-to-pixel light-shielding film formed at boundary portions between the pixels. In a region on a substrate where a rib structure is formed within the peripheral circuit region, no light-shielding film is formed in the same layer as the pixel-to-pixel light-shielding film. The present technology is applicable, for example, to a solid-state imaging element package including a cover glass that protects a light-receiving surface of the solid-state imaging element.

Solid-state imaging element, solid-state imaging element package, and electronic equipment

A solid-state imaging element which detects visible light and ultraviolet light in one pixel provides improved resolution. First and second photoelectric conversion elements each perform photoelectric conversion of incident light. A first accumulation part accumulates electric charges that are photoelectrically converted by the first photoelectric conversion element second accumulation part is disposed on one face of a substrate and accumulates electric charges that are photoelectrically converted by the second photoelectric conversion element. A connection part is connected to the second accumulation part and transfers the electric charges accumulated in the second accumulation part to another face of the substrate.

Solid-state imaging element and electronic device

Provided are a first photoelectric conversion unit, a second photoelectric conversion unit having a smaller electric charge amount to be converted per unit time than the first photoelectric conversion unit, a charge accumulation unit that accumulates an electric charge generated by the second photoelectric conversion unit, a charge voltage conversion unit, a first transfer gate unit that transfers an electric charge from the first photoelectric conversion unit to the charge voltage conversion unit, a second transfer gate unit that couples potentials of the charge voltage conversion unit and the charge accumulation unit, a third transfer gate unit that transfers an electric charge from the second photoelectric conversion unit to the charge accumulation unit, an overflow path formed under a gate electrode of the third transfer gate unit and transfers an electric charge overflowing from the second photoelectric conversion unit to the charge accumulation unit, and a light reducing unit that reduces light to enter the second photoelectric conversion unit.

Provided is a solid-state imaging element configured to automatically extend dynamic range for each unit pixel. A solid-state imaging element includes, for a unit pixel, a first photoelectric conversion element, a first accumulation portion that accumulates electric charge obtained by photoelectric conversion by the first photoelectric conversion element, and a first film that is electrically connected to the first accumulation portion and has an optical characteristic changing according to applied voltage. Furthermore, the unit pixel of the solid-state imaging element can further include a first transfer transistor that transfers electric charge obtained by photoelectric conversion by the photoelectric conversion element to the first accumulation portion, an amplification transistor that is electrically connected to the first accumulation portion, and a selection transistor that is electrically connected to the amplification transistor.

Solid-state imaging element, method of driving solid-state imaging element, and electronic apparatus

A solid-state imaging device includes an imaging element group in which imaging elements each having a photoelectric conversion portionformed on or above a semiconductor substrateand further having a wire grid polarizerand an on-chip microlensare arrayed in a two-dimensional matrix, and a first interlayer insulating layerand a second interlayer insulating layerprovided on a light incident side of the photoelectric conversion portions. The wire grid polarizeris provided between the first interlayer insulating layerand the second interlayer insulating layer, and the on-chip microlensis provided on the second interlayer insulating layer. The first interlayer insulating layerand the second interlayer insulating layerinclude an oxide material or a resin material, and the on-chip microlens includes SiN or SiON.

Solid-state imaging device

The present disclosure relates to a solid-state imaging device and a method of controlling a solid-state imaging device, and an electronic device for enabling appropriate expansion of a dynamic range with respect to an object moving at a high speed or an object having a large luminance difference between bright and dark to reduce motion distortion (motion artifact). Exposure of a plurality of pixels is individually controlled in units of pixels. The present disclosure can be applied to a solid-state imaging device.

Solid-state imaging device and method of controlling solid-state imaging device, and electronic device

Solid-state image-capturing device using phase difference pixel and production method thereof, and electronic appliance

A high degree of phase difference detection accuracy can be obtained using a phase difference pixel (B) with a simpler configuration. A solid-state image-capturing device includes a pixel array unit in which a plurality of pixels including a phase difference pixel (B) which is a pixel for focal point detection and an image-capturing pixel (A) which is a pixel for image generation are arranged in a two-dimensional array. In this case, a predetermined layer () between a light shielding layer () and a micro lens () formed in the image-capturing pixel has a higher refraction index than a refraction index of the predetermined layer () formed in the phase difference pixel. The technique of the present disclosure can be applied to, for example, a back-illuminated-type solid-state image-capturing device and the like.

Growing community of inventors

Kanagawa, Japan

Tomohiko Asatsuma