Mitsubishi Chemical Corporation

Tomohide Murase

Yasuhiro Kawase

Makoto Ikemoto

Masanori Yamazaki

Mari Abe

Hideki Kiritani

Yasunori Matsushita

Makoto Takahashi

Mitsuru Ueda

Fumikazu Mizutani

Takayoshi Hirai

Iho Kamimura

Yu Shoji

Yasunori Matshushita

To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 &#x3bc;m and at most 1 &#x3bc;m, and which are spherical, and a resin (A) having a melt viscosity at 120&#xb0; C. of at most 100 Pa&#xb7;s.

Agglomerated boron nitride particles, composition containing said particles, and three- dimensional integrated circuit having layer comprising said composition

To provide an interlayer filler composition which, in 3D lamination of semiconductor device chips, forms a highly thermally conductive filling interlayer simultaneously with the bonding of solder bumps or the like and lands between semiconductor device chips, a coating fluid and a process for producing a three-dimensional integrated circuit. An interlayer filler composition for a three-dimensional integrated circuit, which comprises a resin (A) having a melt viscosity at 120&#xb0; C. of at most 100 Pa&#xb7;s and a flux (B), the content of the flux (B) being at least 0.1 part by weight and at most 10 parts by weight per 100 parts by weight of the resin (A).

Interlayer filler composition for three-dimensional integrated circuit

Agglomerated boron nitride particles, composition containing said particles, and three-dimensional integrated circuit having layer comprising said composition

A liquid crystal polyimide, containing: repeating units of formula (I) and having liquid crystallinity, wherein Aand Aare each independently a tetravalent residue of a tetracarboxylic acid, Bis a residue of a bis(amino) polysiloxane of formula (II), and Cis a residue of an organic diamine, wherein Rto Rare each independently a lower alkyl group, x is from 0 to 10, Dis an alkylene group, y is 0 or 1, and Zis selected from the group consisting of &#x2014;H, &#x2014;CH, CF, &#x2014;F, &#x2014;CN and &#x2014;NO. In addition, a liquid crystal resin composition and a resin film for a semiconductor element containing the liquid crystal polyimide.

Liquid crystal polyimide, liquid crystal resin composition containing same, and resin film for semiconductor elements

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Yokohama, Japan

Tomohide Murase