Tokyo Electron Limited

Tokyo Electron Limi Ted

Toyota Electron Limited

Tomohide Minami

Takahiro Kitano

Kippei Sugita

Toshiyuki Matsumoto

Jun Ookura

Shinichi Sugimoto

Hiroaki Kurishima

Yuichi Douki

Hiroshi Shinya

Koji Mahara

Tong Wu

Masami Akimoto

Sylvain Ballandras

Kimihiro Matsuse

Masateru Morikawa

Thierry LaRoche

Tetsuo Fukuoka

Nobuyuki Sata

Masaaki Miyagawa

Jacques Berg

Satoru Nishio

A temperature measurement sensor according to an exemplary embodiment includes a substrate and an optical fiber provided on an upper surface of the substrate and extending along the upper surface. The temperature measurement sensor further includes a light introduction path of a space that allows a space above the upper surface and a space below a lower surface of the substrate to communicate with each other and an optical coupling portion provided on the upper surface and disposed in the light introduction path. The optical coupling portion is optically connected to the end surface of the optical fiber. The optical fiber forms the first pattern shape and the second pattern shape. The first pattern shape includes the optical fiber more densely than the second pattern shape. Light incident on the optical coupling portion from a side of the lower surface through the light introduction path reaches the end surface through the optical coupling portion.

Temperature measurement sensor, temperature measurement system, and temperature measurement method

An antenna device according to an exemplary embodiment includes a first metal layer, a first dielectric layer, a second metal layer, and a second dielectric layer. The first dielectric layer has a thermal conductivity and heat resistance that are higher than those of an FR-4 resin. The antenna device includes a first metal terminal and a second metal terminal, and a thermosensor. A pair of an input terminal and an output terminal of the thermosensor are electrically connected to the first metal terminal and the second metal terminal, respectively, and the second metal layer includes a first segment and a second segment. The first metal terminal is disposed above the first segment, and the second metal terminal is disposed above the second segment.

Antenna device and temperature detection method

An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.

Apparatus and method for real-time sensing of properties in industrial manufacturing equipment

An electrostatic capacitance measuring device includes: a base substrate; a first sensor having a first electrode, one or more second sensors each having a second electrode, and a circuit board mounted on the base substrate. The first sensor is provided along an edge of the base substrate. The second sensors are fixed on the base substrate. The circuit board is connected to the first sensor and the second sensors, and configured to output high frequency signals to the first electrode and the one or more second electrodes and obtain a first measurement value indicating an electrostatic capacitance from a voltage amplitude at the first electrode and one or more second measurement values indicating electrostatic capacitances obtained from voltage amplitudes at the one or more second electrodes. The measuring device has one or more reference surfaces fixed on the measuring device and facing the one or more second electrodes.

Electrostatic capacitance measuring device

In a method for calibrating a measuring device by using a case which includes a case main body configured to accommodate the measuring device, a restricting portion configured to restrict translation of the measuring device accommodated in the case main body and reference surfaces provided in the case main body to face the respective sensor electrodes, a plurality of detection values is acquired in a state where translation of the measuring device accommodated in the case is restricted by the restricting portion, the reference surfaces face respective sensor electrodes of the measuring device and a high frequency signal is applied to the sensor electrodes. Then, coefficients in functions used in calculating measurement values are calibrated such that the measurement values become a predetermined value.

Method for calibrating measuring device and case used in the calibration method

Provided is a measuring instrument for measuring an electrostatic capacity. The measuring instrument includes a base substrate having a disk shape, a plurality of first sensors arranged along an edge of the base substrate and respectively provide a plurality of side electrodes, one or more second sensors each of which has a bottom electrode provided along a bottom surface of the base substrate, and a circuit board. The circuit board is configured to apply a high frequency signal to the plurality of side electrodes and the bottom electrode, to generate a plurality of first measurement values respectively indicating electrostatic capacities based on voltage amplitudes in the plurality of side electrodes, and to generate a second measurement value indicating an electrostatic capacity based on a voltage amplitude in the bottom electrode.

Measuring instrument for measuring electrostatic capacity and method of calibrating transfer position data in processing system by using measuring instrument

In a method for acquiring data indicating an electrostatic capacitance between a focus ring and a measuring device includes a disc-shaped base substrate, sensor units arranged along an edge of the base substrate and a circuit substrate mounted on the base substrate, a processor acquires one or more first data sets respectively including a plurality of digital values indicating an electrostatic capacitance of a corresponding sensor unit. The measuring device is transferred to a region on the mounting table surrounded by the focus ring. The processor acquires second data sets when one or more digital values or an average of the digital values included in each of said one or more first data sets exceeds a first threshold. The processor stores measurement data including the respective second data sets or averages of the digital values of each of the second data sets. The measuring device is unloaded from the chamber.

Method for acquiring data indicating electrostatic capacitance

Electrostatic capacitance can be measured with high directivity in a specific direction. A sensor chip that measures the electrostatic capacitance includes a first electrode, a second electrode and a third electrode. The first electrode has a first portion. The second electrode has a second portion extended on the first portion of the first electrode, and is insulated from the first electrode within the sensor chip. The third electrode has a front face extended in a direction which intersects with the first portion of the first electrode and the second portion of the second electrode, and is provided on the first portion and the second portion. The third electrode is insulated from the first electrode and the second electrode within the sensor chip. No portion is extended from the first electrode to be positioned above the first portion.

Sensor chip for electrostatic capacitance measurement and measuring device having the same

Provided is a pressure measuring device including a first electric resistor that is exposed to gas; a second electric resistor that is exposed to gas and has the same structure as that of the first electric resistor; a first measuring unit that measures a first voltage drop generated across the first electric resistor; a second measuring unit that measures a second voltage drop generated across the second electric resistor; a third measuring unit that measures a third voltage drop generated across the first electric resistor; a calculating unit that calculates a correction value that corrects the third voltage drop, based on a difference between the first voltage drop and the second voltage drop; and an output unit that corrects the third voltage drop using the calculated correction value and outputs a pressure value according to the third voltage value after the correction.

Pressure measuring device and pressure measuring method

Electrostatic capacitance can be measured with high directivity in a specific direction. A sensor chip that measures the electrostatic capacitance includes a first electrode, a second electrode and a third electrode. The first electrode has a first portion. The second electrode has a second portion extended on the first portion of the first electrode, and is insulated from the first electrode within the sensor chip. The third electrode has a front face extended in a direction which intersects with the first portion of the first electrode and the second portion of the second electrode, and is provided on the first portion and the second portion. The third electrode is insulated from the first electrode and the second electrode within the sensor chip.

A system of inspecting a focus ring is provided. The system includes a measuring device, a transfer device and an operation unit. The measuring device includes a base substrate, a sensor chip and a circuit board. The sensor chip has a sensor electrode and is provided along an edge of the base substrate. The circuit board is configured to output a high frequency signal to the sensor electrode and acquire a digital value indicating electrostatic capacitance based on a voltage amplitude in the sensor electrode. The transfer device is configured to scan the measuring device. The operation unit is configured to obtain difference values by performing a difference operation with respect to the digital values acquired by the measuring device at multiple positions along a direction which intersects with an inner periphery of the focus ring.

System of inspecting focus ring and method of inspecting focus ring

Disclosed is a method for manufacturing a sensor module that generates heat through an electric resistor adapted to be exposed to a gas, and outputs a temperature change caused in the electric resistor according to a pressure of the gas, as a resistance change of the electric resistor. The method includes: forming an insulation layer on a substrate in which the insulation layer is an oxide film or a nitride film; and forming a conductor layer on the insulation layer under a temperature condition of 300&#xb0; C. to 600&#xb0; C., in which the conductor layer serves as the electric resistor.

Pressure sensor and method for manufacturing the same

Disclosed is a pressure sensor that outputs a temperature change caused in an electrical resistor according to a pressure of a gas, as a resistance change in the electrical resistor. The pressure sensor includes: a base substrate including a recess formed therein, a floating film formed on the base substrate, a heater formed on a surface of the floating film and configured to heat the floating film when a current flows therein, and a temperature sensor formed as the electrical resistor on the surface of the floating film. The temperature sensor changes a voltage drop with respect to a current flowing therein according to the temperature of the floating film.

A position alignment of a transfer point of a transfer arm is performed by using a position detecting method. The method includes: detecting electrostatic capacitances in relation with a reference object for position alignment by a plurality of electrostatic capacitance detecting electrodes provided on a surface of the substrate body; communicating with each electrostatic capacitance detecting electrode and controlling a detection of each electrostatic capacitance detecting electrode; and calculating coordinates (x, y) of the reference object with respect to the substrate body based on a preset relationship between electrostatic capacitance values of multiple electrostatic capacitance detecting electrodes and a position of the reference object with respect to the substrate body.

Position detecting method for performing position alignment of transfer point of transfer arm

A position alignment of a transfer point of a transfer arm is performed by using a position detecting wafer capable of being loaded into an apparatus having a thin transfer port. The position detecting wafer S includes an electrostatic capacitance detecting sensorfor detecting an electrostatic capacitance in relation with a reference object for the position alignment. The electrostatic capacitance detecting sensorincludes a plurality of electrostatic capacitance detecting electrodes, each forming the electrostatic capacitance in relation with the reference object; and a control circuitfor controlling a detection of the electrostatic capacitance by each electrostatic capacitance detecting electrode, while communicating with each electrostatic capacitance detecting electrode. The electrostatic capacitance detecting electrodesare provided on a rear surface of the position detecting wafer S, and the control circuitis provided on a front surface of the position detecting wafer S.

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Miyagi, Japan

Tomohide Minami