Merck Patent Gmbh

Az Electronic Materials USA Corp.

Az Electronic Materials (luxembourg) S.a.r.l.

Tomohide Katayama

Hiroshi Hitokawa

Masato Suzuki

Shunji Kawato

Tetsumasa Takaichi

Hengpeng Wu

Mark O Neisser

Joseph E Oberlander

Shigemasa Nakasugi

Medhat A Toukhy

Shuji Sue Ding-Lee

Hiroshi Yanagita

Aritaka Hishida

Toshiya Okamura

Wenbing Kang

Rikio Kozaki

Kazumichi Akashi

Medhat E Toukhy

Rui Zhang

Tomotsugu Yano

Yoshihiro Miyamoto

Yu Sui

Wen-Bing Kang

Takayuki Sao

Katsuyuki Sakamoto

Masahiko Kubo

To provide a novel polymer capable of reducing sublimate during film formation and a composition comprising the same. The polymer (A) according to the present invention comprises at least one structural unit selected from the group consisting of Unit (a), Unit (b), Unit (c) and Unit (d) having certain structures, wherein, n, n, nand n, which are the numbers of repetition respectively of Units (a), (b), (c) and (d), satisfy the following formulae: n+n>0, n≥0 and n≥0.

Polymer, semiconductor composition comprising polymer, and method for manufacturing film using semiconductor composition

[Problem to be Solved] To provide a bottom antireflective coating forming composition which can show high etching resistance and can be crosslinked even at a relatively low temperature. Further, to provide a resist pattern manufacturing method and a device manufacturing method using the same. [Solution] The bottom antireflective coating forming composition comprises: a polymer A comprising specific repeating units; a low molecular crosslinking agent having a molecular weight of 100 to 3,000; and a solvent. The resist pattern manufacturing method and the device manufacturing method using the same are also provided.

Bottom antireflective coating forming composition

[Problem] To provide a high heat resistance resist composition and a pattern formation method using the composition. [Solution] The present invention provides a chemically amplified negative-type resist composition comprising a particular polymer and a particular crosslinking agent, and this composition makes it possible to form a resist pattern of high sensitivity, of excellent resolution and of strong heat-resistance.

High heat resistance resist composition and pattern forming method using the same

The present invention relates to a photosensitive resin composition suitable for forming a thick film, which comprises (A) an alkali-soluble resin, (B) at least one plasticizer selected from a group consisting of an alkali-soluble vinyl resin and an acid-dissociable group containing vinyl resin, (C) an acid generator, and (D) an organic solvent.

Chemically amplified positive photoresist composition and pattern forming method using same

[Problem] To provide a composition for forming a fine pattern having a good pattern shape even after being applied to a thick-film resist, a high size reduction rate and less defects, as well as a method for forming a fine pattern using the same. [Means for Solution] A composition comprising vinyl resin, an amine compound having a specific cage-type three-dimensional structure and a solvent, and a method for forming a fine pattern using the same.

Composition for forming fine pattern and method for forming fine pattern using the same

[Problem] To provide a dispersion containing surface-modified silica nanoparticles highly dispersed in an organic dispersion medium and also having high transparency and storage stability. [Solution] Disclosed is a method for producing surface-modified silica nanoparticles comprising: preparing a first silica nanoparticle dispersion containing silica nanoparticles and an aqueous dispersion medium; replacing the aqueous dispersion medium in the first silica nanoparticle dispersion with an organic dispersion medium comprising at least one selected from cyclic esters or cyclic amides, to obtain a second silica nanoparticle dispersion; and mixing the second silica nanoparticle dispersion with a silane coupling agent represented by the formula (1): 

Method for producing surface-modified silica nanoparticles, and surface-modified silica nanoparticles

[Object] To provide a top anti-reflection coating composition equal or superior to known products in film-formability, in refractive index, in temporal stability and in safety; and also to provide a pattern formation method using the same. [Means] A top anti-reflection coating composition comprising a solvent, an alkylsulfonic acid having 10 to 18 carbon atoms, and a fluorine-containing polymer having a weight average molecular weight of 300000 to 800000 and represented by the formula (1): -A-B- (1). In the formula (1), A is a repeating unit represented by the formula (A): (R is a fluorine-containing alkylene group having 1 to 40 carbon atoms or R is a fluorine-containing alkylene group having 2 to 100 carbon atoms and an ether bond); B is a repeating unit capable of combining with A to form a copolymer; x and y are numbers indicating the polymerization ratios, provided that x is not equal to 0; and A and B may randomly combine with each other or may form blocks. 

Upper surface antireflective film forming composition and pattern forming method using same

The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent, and optionally, a photoacid generator and/or an acid and/or a thermal acid generator. The invention further relates to a process for using such a composition.

Positive-working photoimageable bottom antireflective coating

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Kakegawa, Japan

Tomohide Katayama