Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Tomohide Kamiyama

Keiji Onishi

Takehiko Yamakawa

Tomohiro Iwasaki

Hiroshi Nakatsuka

Kazuhiro Yahata

Takashi Uno

Hiroshi Naitou

Motoyoshi Iwata

Hikaru Ikeda

Toshio Ishizaki

Takeshi Fujii

Kunihiko Nakamura

Yoshiyuki Saito

Masaya Hattori

Yasuhiko Sasaki

An electronic control device includes: a first input-output terminal and a second input-output terminal through which differential signals are input and output; a transceiver integrated circuit (IC) that transmits and receives the differential signals; a first line that connects the first input-output terminal and the transceiver IC; and a second line that connects the second input-output terminal and the transceiver IC. A first capacitance that is a capacitance between the first line and a ground is at least 80 pF and at most 220 pF, and a second capacitance that is a capacitance between the second line and the ground is at least 80 pF and at most 220 pF.

Electronic control device

A radio frequency amplifier circuit includes a transistor and an output-side matching circuit. The output-side matching circuit includes a first distributed constant line to which a radio frequency signal from the transistor is transmitted, a flat plate lead terminal transmitting the radio frequency signal from the first distributed constant line to an outside of the package, and a capacitive element having one electrode that is connected to the lead terminal and the other electrode that is grounded. A back surface of the lead terminal is joined to a resin substrate, and the capacitive element and the first distributed constant line are disposed adjacent to each other, with an alignment direction of the capacitive element and the first distributed constant line intersecting an alignment direction of the first distributed constant line and the lead terminal.

Radio frequency amplifier circuit

A radio frequency power amplifier includes: an amplifying element which amplifies an input signal and outputs the signal from an output terminal; and an output load circuit which includes a first resonant circuit and a second resonant circuit that are connected to the output terminal. The first resonant circuit has a resonance frequency higher than the frequency of the second harmonic of the input signal, and the second resonant circuit has a resonance frequency lower than the frequency of the third harmonic of the input signal. The output load circuit has such an impedance looking from the output terminal that a phase of a reflection coefficient at the second harmonic of the input signal is greater than 180 degrees and less than 360 degrees, and a phase of a reflection coefficient at the third harmonic of the input signal is greater than 0 degrees and less than 180 degrees.

Radio frequency power amplifier

A semiconductor package according to the present invention includes: a semiconductor element where a high frequency signal is input or output; a planar lead terminal having an end electrically connected to an input terminal or an output terminal of the semiconductor element; an encapsulation resin for encapsulating the lead terminal and the semiconductor element, the lead terminal having another end exposed from the resin; and a ground enhancing metal body encapsulated in the encapsulation resin, having a first main surface facing the lead terminal and a second main surface exposed from the encapsulation resin, wherein the ground enhancing metal body has a shape with a cross section parallel to the second main surface and having a smaller area than an area of the first main surface.

Semiconductor package, method and mold for producing same, input and output terminals of semiconductor package

A radio frequency amplifier circuit includes: low-output transistors, each of which includes an input terminal, an output terminal, and a ground terminal, and amplifies a radio frequency signal; a harmonic processing circuit provided for each of the low-output transistors to be connected to the output terminal of the low-output transistor, and processing a secondary harmonic included in an amplified radio frequency signal, and a resistor connected to the output terminal of each of the low-output transistors. The input terminal of each of the low-output transistors is connected to an input terminal of the radio frequency amplifier circuit via an inductor, and the output terminal of each of the low-output transistors is connected to the other output terminal via the resistance and is further connected to an output terminal of the radio frequency amplifier circuit via an inductor.

A resonator using the MEMS technology is provided which improves the accuracy of a shape of electrodes so as avoid a short circuit that would otherwise be caused between input and output electrodes to thereby increase the reliability thereof. A resonator includes a substrate, an insulation layerformed selectively on the substrateas a sacrificial surface, a beamformed on the substratevia a space, a first support portionA formed on the insulation layerof the same material as that of the beam, and electrodes formed with a space defined between the beamand themselves for signals to be inputted thereinto and outputted therefrom. A sectional area of the beamand a sectional area of the first support portionA are substantially equal in a section which is perpendicular to a longitudinal direction of the beam

Resonator and production method thereof

A radio frequency amplifier circuit according to the present invention is for providing a radio frequency amplifier circuit with high output and high efficiency, and includes (i) a first harmonic processing circuit () and (ii) a second harmonic processing circuit () which are connected to an output terminal of transistors (), and a (iii) fundamental matching circuit () connected to a downstream of the first harmonic processing circuit () and the second harmonic processing circuit (). The radio frequency amplifier circuit includes plural first harmonic processing circuits () and plural second harmonic processing circuits ().

A film bulk acoustic wave resonator including a piezoelectric body, and a first electrodeand a second electrodethat are provided respectively on the main surfaces of the piezoelectric body, the piezoelectric body being applied an electric field through the first and the second electrodes so as to generate a resonant vibration. A first mass load material portionhaving an annular shape is provided outside the planar region of the first electrode on the main surface of the piezoelectric body, a mass load effect thereof being larger than that of the first electrode. The outer periphery of the first electrode and the inner periphery of the first mass load material portion are spaced apart from each other, whereby the first electrode and the first mass load material portion are electrically insulated from each other. The first mass load material portion has a laminated structure including a first auxiliary electrode layerand a load material layerformed on the auxiliary electrode layer. The first auxiliary electrode is formed with the same material to have the same thickness as the first electrode. Energy loss can be reduced, while the first mass load material portion can be formed easily with high precision.

Film bulk acoustic wave resonator and method for manufacturing the same

A dual mode piezoelectric filter includes a piezoelectric material layer composed of a piezoelectric thin film of the high-cut type formed on a substrate, a first electrode and a second electrode formed on one of the major surfaces of the piezoelectric material layer with a gap provided therebetween, a third electrode formed on the other major surface of the piezoelectric material layer opposite to the first electrode, the second electrode, and the gap, and an interelectrode mass load element formed in the gap or at a position opposite to the gap on a surface of the piezoelectric material layer. The relationships (&#x3c1;h)&#x2266;(&#x3c1;a&#xd7;ha) and (&#x3c1;h)&#x2266;(&#x3c1;a&#xd7;ha) are satisfied, where his the thickness and &#x3c1;is the density of the first electrode, his the thickness and &#x3c1;is the density of the second electrode, and ha is the thickness and &#x3c1;a is the density of the interelectrode mass load element. A filter characteristic with a smooth passband and low losses is obtained.

Dual mode piezoelectric filter, method of manufacturing the same, high frequency circuit component and communication device using the same

A piezoelectric filter comprises a substrate and a plurality of piezoelectric resonators provided on the same substrate. Each piezoelectric resonator comprises a cavity formed in the substrate, a lower electrode formed on the substrate, covering the cavity, a piezoelectric material layer formed on the lower electrode, and an upper electrode formed on the piezoelectric material layer. At least one of the piezoelectric resonators has a cavity formed of a plurality of cells.

Piezoelectric filter, antenna duplexer, and communications apparatus employing piezoelectric resonator

An acoustic resonator includes a substrate, a support section provided on the substrate, a lower electrode provided on the support section, a piezoelectric body provided on the lower electrode, and an upper electrode provided on the piezoelectric body. The lower electrode, the piezoelectric body and the upper electrode form a vibration section. The support section for supporting the vibration section is shaped such that at least one portion of a vertical cross-section thereof has a curvature.

Device including piezoelectric thin film and a support having a vertical cross-section with a curvature

An upper electrode is provided on one main surface of a piezoelectric layer, and a lower electrode is provided on the other main surface thereof. A vibration section is an area in which the lower electrode, the piezoelectric layer and the upper electrode overlap in a vertical projection direction. Line electrodes for respectively connecting the lower electrode and the upper electrode to input/output electrodes are provided on the one main surface and the other main surface of the piezoelectric layer. The vibration section is placed on (connected to) the substrate via the support section. The support section is provided on an area of the piezoelectric layer excluding the area on which the vibration section is provided and the area on which the input/output electrodes and the line electrodes are provided.

Growing community of inventors

Osaka, Japan

Tomohide Kamiyama