Sony Corporation

Tomohide Jozaki

Shinsuke Hirano

Shingo Kadomura

Yoshiaki Tatsumi

Kinya Miyashita

Seiichirou Miyata

Takayuki Fukunaga

Yasushi Kato

Akira Kojima

Toshiro Kisakibaru

Isao Honbori

Yoshinori Hata

Hirohisa Kooriyama

A lot management production method in which the lot size is reduced in order to respond to an order for small volume of large variety, without increasing the intermediate inventory and reducing lead-time, however without reducing the productivity of a production of large volume of small variety. Part of the processes in a production line are performed for pieces, or products to be manufactured, in a single lot, while other processes are done for pieces in a group or aggregate of single lots.

Lot management production method and product carrying container

The electrostatic chucking device,comprises an electrostatic chuck,a temperature detecting unit,for detecting the temperature of the electrostatic chuck,a power supply,connected to the electrostatic chuck,and used for impressing a DC voltage to the electrostatic chuck,to provide it with an attracting force; and a controller,for controlling the value of the DC voltage impressed by the power supply,according to the temperature of the electrostatic chuck detected by the temperature detecting unit,When the value of the temperature of the electrostatic chuck,detected by the temperature detecting unit,is higher than the preset value, the controller,lowers the voltage impressed by the power supply,from the preset value and when the value of the temperature of the electrostatic chuck,is lower than the preset value, the controller,raises the impressed voltage from the preset value, whereby the attracting force of the electrostatic chuck,can be kept irrespective of temperature change of the electrostatic chuck

Electrostatic chucking device

A problem in the manufacture of semiconductor wafers exists in that reaction product adhering to a quartz member is peeled off and falls on wafers, thus causing particles to contaminate the wafers. In system of introducing electro-magnetic waves from the outside via the quartz member, an inventive high-density plasma etching system for processing wafers by introducing electro-magnetic waves generated by a TCP electrode into a vacuum chamber via a quartz top board and by generating plasma by exciting gas within the chamber comprises a far infrared ray heater disposed above the quartz top board to heat the quartz top board by radiant heat of infrared rays generated from the far infrared ray heater, reducing the product adhering to the quartz member and thus the contaminating particles, thereby improving the yield of the wafers.

Semiconductor manufacturing system and semiconductor manufacturing method

A method for etching a laminated film comprising at least two layers of a semiconductor device, the method comprising: a step, in which etching of an upper layer is started with a first etching gas, and the etching of the upper layer is stopped before a lower layer is exposed; and a step, in which a remainder of the upper layer and the lower layer is etched with a second etching gas.

Method for etching

An apparatus,for manufacturing a semiconductor device capable of actually putting the low temperature etching technique into practical use is also provided, having a vacuum chamber,in which a specimen stage,having a cooling means is disposed at the inside and a plasma generation means for generating plasmas, in which a specimen, for example, semiconductor substrate W is processed by generating plasmas while controlling the temperature of the specimen W placed on a specimen stage,by cooling the specimen stage,by a cooling means. The cooling means uses a liquefied gas or a gas as a coolant, the flow channel for the coolant is formed by arranging in parallel a plurality of pipelines,having diameters different from each other at positions before flowing to the specimen stage, and the specimen stage,is cooled by flowing the coolant through the pipelines,. The cooling means is provided with a control means,for controlling the amount of the coolant caused to flow to each of the plurality of pipelines,respectively.

Method and apparatus for dry etching

The electrostatic chucking device 2 comprises an electrostatic chuck 4; a temperature detecting unit 10 for detecting the temperature of the electrostatic chuck 4; a power supply 9 connected to the electrostatic chuck 4 and used for impressing a DC voltage to the electrostatic chuck 4 to provide it with an attracting force; and a controller 11 for controlling the value of the DC voltage impressed by the power supply 9 according to the temperature of the electrostatic chuck detected by the temperature detecting unit 10. When the value of the temperature of the electrostatic chuck 4 detected by the temperature detecting unit 10 is higher than the preset value, the controller 11 lowers the voltage impressed by the power supply 9 from the preset value and when the value of the temperature of the electrostatic chuck 4 is lower than the preset value, the controller 11 raises the impressed voltage from the preset value, whereby the attracting force of the electrostatic chuck 4 can be kept irrespective of temperature change of the electrostatic chuck 4.

Method of holding wafer, method of removing wafer and electrostatic

A method of dry etching treatment capable of attaining both high selectivity and fine fabrication at a high accuracy simultaneously is provided, in which an etching treatment comprising a plurality of steps are applied to a specimen W in one identical processing apparatus, and the temperature of the specimen is changed between etching of one step and etching of another step succeeding thereto, among the plurality of the steps, thereby applying etching at temperatures different between the one step and the step succeeding thereto.

Method and apparatus for dry etching with temperature control

There are provided a static electricity chuck which can vary the temperature of a wafer in a short time without adversely effecting throughput, and a wafer stage having the static electricity chuck. The static electricity chuck includes a dielectric member 4 formed of insulating material, an electrode 5 of conductor which is disposed at the lower side of the dielectric member 4, and a heater 6 which is disposed at the lower side of the electrode 5 and heats the dielectric member 4. The wafer stage 1 includes the static electricity chuck which is provided on a metal jacket having cooling apparatus.

Static electricity chuck and wafer stage

Disclosed is a wafer stage allowing a plasma process under a heating condition at a high temperature, particularly, 400.degree. C. or more using the improved electrostatically chucking technology with the increased temperature-controllability. The wafer stage includes an electrostatic chuck and a temperature adjusting jacket disposed under said electrostatic chuck. The electrostatic chuck includes: a dielectric member made from an insulating material; an electrode formed of a brazing layer, which is disposed on the underside of said dielectric member for fixing said dielectric member; an aluminum nitride plate disposed on the underside of said electrode, to which said dielectric member is fixed through said electrode; a heater, disposed on the underside of said aluminum nitride plate, for heating said dielectric member; and a metal plate disposed on the underside of said aluminum nitride plate and also at least on a top or bottom side of said heater. The temperature adjusting jacket is made from a composite aluminum based material prepared by treatment of aluminum or an aluminum alloy with inorganic fibers under a high pressure, and includes a temperature adjusting means.

Wafer stage for manufacturing a semiconductor device

A plasma treatment method and system allowing the plasma intensity to be controllably distributed perpendicularly to the inner wall and ensuring effective and uniform treatment in the case of executing plasma cleaning, plasma CVD, RIE or the like. In the plasma treatment where plasma is generated within a chamber 1 for plasma treatment, magnetic field 31 is applied perpendicularly to the inner wall of the chamber to produce plasma whose intensity is directed perpendicularly to the inner wall of the chamber or in parallel with the surface to be treated. Further, the magnetic filed 31 rendered into a revolving field 32 may be applied to rotate the plasma to accomplish a uniform and effective treatment.

Growing community of inventors

Kanagawa, Japan

Tomohide Jozaki