Stanley Electric Co., Ltd

Linoptx, LLC

Tomofumi Yamamuro

Hiroyuki Kato

Akio Ogawa

Michihiro Sano

Hiroshi Kotani

Naochika Horio

Lin Pang

An image capture apparatus includes a light source, a modulator configured to modulate light irradiated from the light source to a target object, an imaging device configured to generate image data by capturing one or more images of the target object, and processing circuitry. The processing circuitry is configured to drive the modulator by a first modulation signal, the first modulation signal being for irradiating a first pattern, drive the modulator by a second modulation signal, the second signal being for irradiating a second pattern, wherein the first pattern and the second pattern are irradiated alternately, modulate reflected light from the target object, the reflected light from the target object being detected at a lock-in detector, and generate an image composed of image data from the reflected light of the plurality of localized illuminations.

Apparatuses and methods for backscattering elimination via spatial and temporal modulations

A system for association-based scattering processing includes a spatial light modulator configured to modulate one or more of phase and amplitude of light irradiated from a light source to a target object. Additionally, the system includes processing circuitry configured to evaluate a field distribution for one localized illumination, induce a set of field distributions for a plurality of localized illuminations based on the field distribution for the one localized illumination, and apply the set of field distributions to the spatial light modulator, scanning a plurality of localized illuminations on the target object.

System and method for association assisted establishment of scattering configuration in scattering processing

An adaptive lighting apparatus includes a light source, a spatial light modulator, and processing circuitry. Further, the processing circuitry is configured to drive the spatial light modulator by a modulation signal for irradiating patterns for generating one or more localized illuminations, scan the one or more localized illuminations on the target object based on the patterns, and calculate, in advance, the patterns so that light intensity of the one or more localized illuminations is enhanced on a virtual target located at a predetermined distance and without a scattering medium.

Ballistic light modulations for image enhancement through fog

A lighting system includes a light source having a broad emission spectrum, a spatial light modulator configured to modulate one or more of phase and amplitude of light irradiated from the light source to a target object, and a detector configured to detect light intensity being reflected from the target object. Additionally, the lighting system includes circuitry configured to divide an emission spectrum of light irradiated from a light source into a plurality of wavelength ranges, measure irradiated light formed with a first wavelength range to the target object, calculate a transmission matrix based on the measurement, calculate a set of other transmission matrixes, calculate a set of patterns for generating a plurality of localized illuminations, drive the spatial light modulator by a modulation signal which forms an irradiation pattern, and scan the plurality of localized illuminations on the target object.

Lighting system and imaging method using incoherence light

A light emitting device and a method of manufacturing the same are capable of enhancing brightness and color distribution characteristics on a light-exiting surface. The light emitting device can include: a substrate; a light emitting stacked body composed of a semiconductor light emitting element disposed on the substrate, a wavelength conversion layer disposed on the semiconductor light emitting element and containing phosphor particles, and a light-transmitting plate member disposed on the wavelength conversion layer; and a light-transmitting scattering member containing a scattering material and disposed on the light-transmitting plate member.

Light emitting device and method

In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layerbetween a ZnO based n-type layerto which n-type dopants are doped and an active layeror a p-type layer. The diffusion barrier layerprevents diffusion of the n-type dopants to the active layeror the p-type layer. Crystalline quality of the active layerof the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants.

Zinc oxide based compound semiconductor device

A ZnO-containing semiconductor layer contains Se added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or a semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device

Mg is doped in a ZnO-containing semiconductor layer in a concentration range from 1&#xd7;10cmto 2&#xd7;10cm.

ZnO-containing semiconductor layer and device using the same

A ZnO based semiconductor device includes: a lamination structure including a first semiconductor layer containing ZnO based semiconductor of a first conductivity type and a second semiconductor layer containing ZnO based semiconductor of a second conductivity type opposite to the first conductivity type, formed above the first semiconductor layer and forming a pn junction together with the first semiconductor layer; and a Zn&#x2014;Si&#x2014;O layer containing compound of Zn, Si and O and covering a surface exposing the pn junction of the lamination structure.

ZnO based semiconductor device and its manufacture method

A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.

ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device

A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.

A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnOS; a second semiconductor layer formed above the first semiconductor layer and containing ZnOS; and a third semiconductor layer formed above the second semiconductor layer and containing ZnOS, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.

ZnO based semiconductor light emitting device and its manufacture method

A ZnO layer is provided which can obtain emission at a wavelength longer than blue (e.g., 420 nm) and has a novel structure. A transition energy narrower by 0.6 eV or larger than a band gap of ZnO can be obtained by doping S into a ZnO layer.

ZnO layer and semiconductor light emitting device

A method includes (a) preparing a substrate, and (b) growing a ZnO-containing compound semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as a surfactant.

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Kawasaki, Japan

Tomofumi Yamamuro