Hamamatsu-photonics K.k.

Tomochika Takeshima

Kazuhiro Hotta

Takafumi Higuchi

Norikazu Sugiyama

Kouichi Kaneko

A semiconductor apparatus examination method includes a step of acquiring a first interference waveform based on signals from a plurality of drive elements according to light from a first light beam spot including the plurality of drive elements in a semiconductor apparatus, a step of acquiring a second interference waveform based on signals from the plurality of drive elements according to light from a second light beam spot having a region configured to partially overlap the first spot and including the plurality of drive elements, and a step of separating a waveform signal for each of the drive elements in the first and second spots based on the first and second interference waveforms.

Semiconductor apparatus examination method and semiconductor apparatus examination apparatus

A semiconductor inspection method by an observation system includes a step of acquiring a first pattern image showing a pattern of a semiconductor device, a step of acquiring a second pattern image showing a pattern of the semiconductor device and having a different resolution from a resolution of the first pattern image, a step of learning a reconstruction process of the second pattern image using the first pattern image as training data by machine learning, and reconstructing the second pattern image into a reconstructed image having a different resolution from a resolution of the second pattern image by the reconstruction process based on a result of the learning, and a step of performing alignment based on a region calculated to have a high degree of certainty by the reconstruction process in the reconstructed image and the first pattern image.

Method for inspecting semiconductor and semiconductor inspecting device

An observation system includes a detector that detects light from a semiconductor device and outputs a detection signal, a 2D camera, an optical device that guides light to the detector and the 2D camera, an image processing unit that generates a first optical image of the semiconductor device based on the detection signal and receives an input of a first CAD image, an image analysis unit that learns a conversion process of the first CAD image by machine learning using the first optical image as training data, and converts the first CAD image into a second CAD image resembling the first optical image by the conversion process based on a result of the learning, and an alignment unit that performs alignment based on a second optical image and the second CAD image.

Semiconductor inspection device and semiconductor inspection method

A semiconductor device examination method includes a step of acquiring a first interference waveform based on signals from a plurality of drive elements according to light from a first light beam spot including the plurality of drive elements in a semiconductor device, a step of acquiring a second interference waveform based on signals from the plurality of drive elements according to light from a second light beam spot having a region configured to partially overlap the first spot and including the plurality of drive elements, and a step of separating a waveform signal for each of the drive elements in the first and second spots based on the first and second interference waveforms.

Semiconductor device examination method and semiconductor device examination device

The image processing deviceincludes a template preparation unitfor preparing, from a template included in pixels of M rows and M columns (M is an integer not less than 3) corresponding to a molecular model, a partial template corresponding to a shape for which a shape of the molecular model is divided, an evaluation value calculation unitfor evaluating, in the optical image, by use of the partial template, matching between the optical image and the partial template to calculate an evaluation value for every plurality of the attention pixels, and a molecular location identification unitfor identifying the molecular location in the optical image based on the evaluation value.

Image processing device, imaging device, microscope device, image processing method, and image processing program

Provided is a cell analysis method in a cell analysis device D that uses an optical path length image of a cell colony formed of a large number of cells to analyze the cell colony, the method comprising: acquiring the optical path length image of the cell colony by an acquisition unit of the cell analysis device; extracting a circular shape corresponding to a cell nucleus of the cell in the acquired optical path length image by an extraction unit of the cell analysis device extracts; comparing an inner optical path length of the extracted circular shape and an outer optical path length of the extracted circular shape by a comparison unit of the cell analysis device extracts; and analyzing the cell colony based on the comparison result by analysis unit of the cell analysis device.

Cell analysis method, cell analysis device, and cell analysis program

A failure analysis apparatusA is provided with a voltage applying unitfor applying a bias voltage to a semiconductor device S, an imaging devicefor acquiring an image, and an image processing unitfor performing image processing, and the imaging deviceacquires a plurality of analysis images each including a thermal image in a voltage applied state and a plurality of background images in a voltage non-applied state. The image processing unitincludes an imaging position calculating sectionfor calculating an imaging position of each of the analysis images and the background images, an image classifying sectionfor classifying the analysis images and the background images into N image groups based on a region division unit prepared for the imaging position, and a difference image generating sectionfor generating difference images between the analysis images and the background images individually for N image groups. Accordingly, a semiconductor failure analysis apparatus and method capable of suppressing the effect of a shift in imaging position in a thermal analysis image of a semiconductor device can be realized.

Growing community of inventors

Hamamatsu, Japan

Tomochika Takeshima