Nippondenso Co., Ltd.

Denso Corporation

Sumco Corporation

Sumitomo Mitsubishi Silicon Corporation

Tomoatsu Makino

Ryoichi Okuda

Hitoshi Yamaguchi

Shoichi Yamauchi

Yutaka Fukuda

Yoshiyuki Hattori

Takeshi Matsui

Noboru Yamamoto

Yasuaki Makino

Kuniaki Mamitsu

Seiki Aoyama

Susumu Kuroyanagi

Yoshimi Nakase

Tomonori Yamaoka

Syouji Nogami

Yasuyoshi Hirai

Katsuteru Miwa

Kazuhito Nomura

Kazuo Kajimoto

Takahiko Yoshida

Yukio Tsuzuki

Masahiro Yamamoto

Shoji Miura

Masami Yamaoka

Takeshi Miyajima

Koichi Toyama

Takanori Teshima

Makoto Kuwahara

Naohito Kato

Atsushi Hashikawa

Tohru Nomura

Kyoko Okada

Muneo Yorinaga

Yoshiyuki Miyase

Masahiro Shiozawa

Hiroshi Sakurai

Ichirou Izawa

Toshio Tanaka

Yoshio Hirano

Kenji Yagi

Fuminari Suzuki

Kasuhiro Yamada

Yoshiki Ishida

Yasuki Makino

Norboru Yamamoto

Shunichi Takeda

A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.

Method for manufacturing semiconductor device

A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a terminal contact semiconductor region on a surface portion of the terminal upper semiconductor layer adjacent to the cell region; an insulation layer on the terminal upper semiconductor layer having a first part adjacent to the cell region with a small thickness and a second part adjacent to the first part with a large thickness; and a conductive layer in the cell region and a part of the terminal region, the conductive layer extending from the cell region to the part of the terminal region beyond the first part of the insulation layer.

Semiconductor device having super junction structure and method for manufacturing the same

A semiconductor device includes: a center region; a periphery region; and a semiconductor layer including pairs of a first region having a first impurity amount and a second region having a second impurity amount. The first and the second regions are alternately aligned in a plane. The periphery region includes an utmost outer and an utmost inner periphery pairs. The utmost outer periphery pair has a difference between the second and the first impurity amounts, which is smaller than a maximum difference in the periphery region. The utmost inner periphery pair has a difference between the second and the first impurity amounts, which is larger than a difference in the center region.

A load drive circuit, disposed to drive an inductive load, includes a reflux closed circuit connected to the load. A flywheel diode is placed in the reflux closed circuit. A MOS transistor, disposed to turn on/off current to drive the load, is connected in parallel to the flywheel diode. A capacitor is disposed to connect its both ends to a gate and a drain of the MOS transistor, while a resistor is disposed to connect its both ends to the gate and a source of the MOS transistor. During a recovery operation of the flywheel diode, with the help of the capacitor and resistor, a gate-to-source voltage of the MOS transistor is pulled up to a value over a threshold for a predetermined period of time. Pulling up the gate-to-source voltage results in a softened recovery characteristic of the flywheel diode, suppressing recovery surges.

Load drive circuit using flywheel diode

A semiconductor switching element driving circuit comprises an overcurrent limiting circuit which instantaneously drops a voltage of a gate terminal of an IGBT when a main IGBT current becomes larger than a predetermined level i1. An overcurrent protection circuit which first decreases the main IGBT current at a first inclination when the main IGBT current becomes larger than the other level i2 lower than the i1 and then reduces the main IGBT current at a steep second inclination when it becomes smaller than another level i3.

Semiconductor switching element driving circuit

A semiconductor device includes two semiconductor chips that are interposed between a pair of radiation members, and thermally and electrically connected to the radiation members. One of the radiation members has two protruding portions and front ends of the protruding portions are connected to principal electrodes of the semiconductor chips. The radiation members are made of a metallic material containing Cu or Al as a main component. The semiconductor chips and the radiation members are sealed with resin with externally exposed radiation surfaces.

Semiconductor device having radiation structure

A semiconductor device includes a first conductive member, a second conductive member, a semiconductor chip, which is located between the conductive members, a bonding member, which is located between the first conductive member and the semiconductor chip, another bonding member, which is located between the second conductive member and the semiconductor chip, a molding resin, which is located between the first and second conductive members to seal the semiconductor chip, and a bonding member anti-sticking means, which is located between the molding resin and a surface of one member selected from the group consisting of the semiconductor chip and the conductive members. The bonding member anti-sticking means prevents the bonding members from sticking to the surface in the manufacturing process. As a result, the otherwise insufficient connection due to the sticking between the molding resin and the surface is improved, and the semiconductor device becomes durable in electric performance.

Semiconductor device having radiation structure and method for manufacturing semiconductor device having radiation structure

A pressed-contact type semiconductor device in which a main electrode surface of a semiconductor element is contacted with an electrode plate by a pressed-contact, which can reduce both an electric resistance and a thermal resistance between the main electrode surface of the semiconductor element and the electrode plate. The pressed-contact type semiconductor device ( ) is provided with a semiconductor element ( ) having electrode surfaces, a pair of electrode plates ( ) contacted with the electrode surfaces by the pressed-contact, a pair of insulating plates ( ) contacted with the outer side of the pair of the electrode plates by the pressed-contact, and a pair of radiating plates ( ) contacted with the outer side of the pair of the insulating plates by the pressed-contact. A contact intermediary member ( ), which is made up of particle member having at least thermal conductivity and electric conductivity, is intercalated between the semiconductor element and the electrode plate. The particle member of the contact intermediary member includes large particles having an average particle diameter of more than 2 &mgr;m, and small particles having an average particle diameter of to or less than 2 &mgr;m. Contact intermediary members ( ) are intercalated into gaps generated between the electrode plate and the insulating plate, and between the insulating plate and the radiating plate so as to fill up these gaps. The contact intemediary members are made of powder material having at least thermal conductivity.

Electric apparatus having a contact intermediary member and method for manufacturing the same

Magnetoresistive elements are disposed facing a gear to form a sensor for detecting rotation of the gear. The signal output from MRE sensor is an alternating amplitude signal. An operational amplifier has a differential gain exceeding its operational limit relative to the amplitude value of the sensor signal, and it amplifies and outputs the difference between the sensor signal and a reference voltage. Comparators judge whether an output of the operational amplifier is within a predetermined amplitude range relative to the amplitude center thereof. When the op-amp output deviates from the predetermined amplitude range, transistors either charge or discharge a capacitor, so that the reference voltage can be changed closer to the output of the operational amplifier. Another comparator compares the output signal of the operational amplifier with a threshold value to output a binary-valued signal.

Sensor signal processor having accurate digitizing capabilities

A position detector which provides improved reference position detecting precision by stabilizing the output signal from magnetoelectric transducers in a reference position part. A rotor has a magnetized surface alternately provided with different magnetic poles and a reference positional part in which magnetic poles provided on the magnetized surface are partly omitted. A rotational angle sensor has MR elements laid out thereon in opposition to the magnetized surface of the rotor to output the voltage signal VS according to the magnetic field intensity in the magnetized surface due to the rotation of the rotor. A waveform processing circuit and a pulse signal processing signal shape the waveform of the voltage signal from the rotational angle sensor, and also generate the rotational angle pulse signal and a reference position pulse signal according to the waveform reforming signal. The reference positional part is arranged so that the magnetic field intensity therein can be within the saturation magnetic field region of the Mr elements.

Position detector including a reference position wherein the sensor is

A peak hold circuit 11 holds a peak value of an output signal from a rotating angle sensor 6. A bottom hold circuit 12 holds a bottom value of the output signal from the rotating angle sensor 6. A threshold value is set from the peak value by the peak hold circuit 11 and the bottom value by the bottom hold circuit 12 by resistors 24 to 27, analog switches 28 and 29 and a NOT circuit 31. A comparator 10 compares the output signal of the rotating angle sensor 6 with the set value thus set, and outputs a binary signal (digitized signal) in accordance with the comparison result.

MRE sensor signal detector

Base regions of first and second stage transistors are formed in a semiconductor substrate consisting of low and high resistivity collector layers, and emitter regions are formed in the respective base regions. The emitter region of the second stage transistor has an interdigital structure with a plurality of finger portions, and an emitter surface electrode is formed on the emitter region of the second stage transistor. The second stage transistor emitter surface electrode has an extending portion at a position spaced apart from a transistor operation region where the finger portions are formed. An emitter connection electrode is formed on the extending portion, and a lead is connected by soldering or the like to the emitter connection electrode. In a portion of the emitter surface electrode extending from the emitter connection electrode to the transistor operation region, slits are formed such that they are bypassed by emitter current so that the lead resistance from each finger portion to the emitter connection electrode is substantially uniform.

Semiconductor device constituting bipolar transistor

An ignition system for an internal combustion engine is disclosed. The ignition system includes a timing signal detector responsive to the rotation speed of an engine to generate a pulse signal including a leading edge and a trailing edge corresponding to the ignition timing and having a predetermined duty cycle, a triangular wave generator for generating a triangular wave voltage synchronized with the trailing edge of the pulse signal, a voltage storing circuit for storing the voltage level of the triangular wave voltage in synchronism with the leading edge of the pulse signal, a voltage divider for dividing the stored voltage in the voltage storing circuit to generate a reference voltage, a comparator for comparing the reference voltage and the triangular wave voltage to detect a difference therebetween, a charging and discharging controller for correcting the stored voltage in the voltage storing circuit so as to reduce to zero the difference at the leading edge of the pulse signal, a threshold voltage generator for generating a threshold voltage which is offset from the stored voltage by an amount corresponding to the desired dwell time of an ignition coil, and an energization controller for controlling the dwell time of the ignition coil in accordance with the result of a comparison between the threshold voltage and the triangular wave voltage.

Ignition system for internal combustion engines

An improved ignition system for internal combustion engines including a constant current control circuit for effecting constant current control of an ignition coil primary current, further includes a compensating circuit for controlling a reference voltage, which is to be compared with a detection value of the ignition coil primary current, at a constant value irrespective of a decrease of a power supply voltage, thereby controlling the ignition coil primary current at a given value over a wide range of variations of the power supply voltage including a considerable decrease thereof.

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Okazaki, Japan

Tomoatsu Makino