Shibaura Mechatronics Corporation

Kabushiki Kaisha Toshiba

Kabushiki Kaisha Topcon

Shibaura Engineering Works Co., Ltd.

Tomoaki Yoshimori

Takeharu Motokawa

Yoshihisa Kase

Makoto Karyu

Kosuke Takai

Akira Kobayashi

Kensuke Demura

Kei Hattori

Hidehito Azumano

Masaru Kasai

Makoto Muto

Toshiyasu Onoda

Tokuhisa Ooiwa

Mikio Nonaka

According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.

Plasma processing apparatus and plasma processing method

According to one embodiment, a method is disclosed for manufacturing a reflective mask. The method can include forming a reflection layer on a major surface of a substrate. The method can include forming an absorption layer on the reflection layer. The method can include forming a pattern region in the absorption layer. In addition, the method can include forming a light blocking region surrounding the pattern region in the absorption layer and the reflection layer. The forming the light blocking region includes etching-processing the reflection layer using a gas containing chlorine and oxygen.

Method for manufacturing reflective mask and apparatus for manufacturing reflective mask

A metal film etching method etches selectively a metal film formed on a layer insulating film provided with viaholes so as to cover the surface of the layer insulating film and fill up the viaholes so that the metal film excluding portions there of filling up the viaholes are removed completely without forming a pit in the portions of the metal film filling up the viaholes. The metal film etching method uses a mixed reactive gas of a gas containing fluorine atoms, a gas containing chlorine atoms and oxygen gas.

Metal film etching method

Growing community of inventors

Kanagawa-ken, Japan

Tomoaki Yoshimori