Sony Corporation

Kioxia Corporation

Sony Group Corporation

Toshiba Memory Corporation

Tohoku University

Tomoaki Suzuki

Shogo Shinkai

Taizo Nishimura

Kentaro Okuyama

Hiroto Kawaguchi

Fumihiko Iida

Takayuki Tanaka

Hayato Hasegawa

Yuji Takahashi

Hiroshi Mizuno

Akira Ebisui

Tomoko Katsuhara

Kei Tsukamoto

Yasuyuki Abe

Goichi Ootomo

Takashi Itaya

Shinpei Nagatani

Harumi Sato

Mamoru Mizuno

Tetsuro Goto

Hideo Tanaka

Yoshinori Uchida

Tatsuo Uchida

Takahiro Ishinabe

Tohru Kawakami

Toshio Kano

Yasushi Itoshiro

Makoto Shinoda

Tomohiko Shimatsu

Masahiro Ikeda

Kazukuni Kitagaki

Keiji Sugi

Tomomi Suzuki

A display device has a display panel provided with a plurality of light emitting elementsincluding a light emitting part, and a lens memberthrough which light emitted from the light emitting partpasses, in which when a distance (an offset amount) between a normal LN passing through a center of the light emitting partand a normal LN' passing through a center of the lens memberis defined as D, a value of the distance (offset amount) Dis not 0 in at least some of the light emitting elementsprovided in the display panel.

Display device

A semiconductor device includes a first interface with a first channel at a first data transfer rate, a second interface with a second channel at a second data transfer rate slower than the first data transfer rate, a transfer circuit, and a processor. The processor is configured to, upon the first interface receiving a first data output command from a memory controller via the first channel, issue the first data output command via the second channel, in response to which a first memory chip connected to the second interface reads first data corresponding to the first data output command, and after a first predetermined amount of time has elapsed from the issuance of the first data output command, issue a first transfer start command via the second channel, in response to which the first data is transferred to the transfer circuit via the second channel.

Memory multichip package employing a frequency multiplying bridge chip

According to an embodiment, a semiconductor memory device includes a first chip, a second chip, and a third chip. In a case where a first command sequence including a first address indicating the first chip is received from the first device, the third chip performs transfer of a second command sequence including the first address via the first channel and transfer of a third command sequence including a second address indicating the second chip via the second channel. After a first time elapses from completion of the transfers of the second and third command sequences, the third chip transfers first read enable signals to the first and second channels in parallel, and acquires pieces of first status information in parallel via the first and second channels. The third chip outputs first status information to the first device.

Semiconductor memory device, memory system, and method

According to one embodiment, a semiconductor memory device includes a first circuit, multiple second circuits, and a first number of first channels connected to the first circuit. One or more second circuits are connected to each first channel. The control circuit is connected to the semiconductor memory device via a second channel. The control circuit generates multiple first access requests each for one of the second circuits. The control circuit determines order of execution of the first access requests to allow concurrent execution of a second number of first access requests designating two or more of the second circuits connected to different first channels. The control circuit executes in parallel the second number of data transfers responsive to the second number of first access requests via the second channel at a transfer rate the second number of times a transfer rate of one of the first number of first channels.

Memory system, method, and control circuit

According to one embodiment, in a semiconductor device, a first chip is electrically connected to a terminal to which a signal from a host is input. The first chip is electrically connected to a second chip and to a third chip in parallel with the second chip. The first chip includes a first buffer memory and a second buffer memory. The first buffer memory corresponds to the second chip. The second buffer memory corresponds to the third chip. The second chip includes a third buffer memory. The third chip includes a fourth buffer memory. A capacity of the first buffer memory is equal to or larger than a capacity of the third buffer memory. A capacity of the second buffer memory is equal to or larger than a capacity of the fourth buffer memory.

Semiconductor device

A semiconductor device includes terminals connectable to a host, first and second bridge chips connected to the terminals, first chips connected to the first bridge chip, and second chips connected to the second bridge chip. The terminals includes a first terminal through which a first signal designating a bridge chip is transmitted. The first bridge chip is configured to enable signal transmission to at least one of the first chips when the first signal designates the first bridge chip, and disable the signal transmission to the first chips when the first signal does not designate the first bridge chip. The second bridge chip is configured to enable signal transmission to at least one of the second chips when the first signal designates the second bridge chip, and disable the signal transmission to the second chips when the first signal does not designate the second bridge chip.

A semiconductor device includes a terminal group configured to receive a first signal and a second signal from a host, a first chip electrically connected to the terminal group, and a second chip electrically connected to the terminal group. The first chip is configured to, in response to reception of the first signal, transmit a third signal corresponding to the first signal to the second chip. The first chip is configured to, when the first chip has received the second signal before the first signal, refrain from transmitting the third signal to the second chip.

Semiconductor device and method

A semiconductor integrated circuit includes a register, a first interface circuit, an oscillation circuit that generates a first clock, a pll circuit, a control circuit, and a second interface circuit. The register stores numerical information representing a data size. The first interface circuit receives, from a first device, a first timing signal for data transfer. Responding to receipt of the first timing signal, the control circuit inputs the first timing signal to the pll circuit and counts the number of toggles of the first timing signal. When a counted number of toggles of the first timing signal matches a value corresponding to the numerical information, the control circuit inputs the first clock to the pll circuit. The second interface circuit transmits, to a second device, the first timing signal or a second timing signal, which corresponds to a second clock generated based on the first clock by the pll circuit.

Semiconductor integrated circuit, semiconductor storage device, and control method

A semiconductor device includes a first chip, a plurality of second chips, and a plurality of first signal lines. The first chip is electrically connected to a terminal group that receives a first signal from a host. The second chips are electrically connected to the first chip and are capable of outputting respective ready/busy signals. The ready/busy signals can be transferred through the first signal lines. Each of the second chips is respectively connected to the first chip through a corresponding first signal line among the plurality of first signal lines.

Semiconductor device and method for controlling plural chips

A semiconductor storage device includes a bridge chip and memory chips connected to the bridge chip by a plurality of channels. The bridge chip includes a first delay circuit for setting the start of a first timing signal for a first memory chip output via a first channel and a second delay circuit for setting the start of for second timing signal for a second memory chip output via a second channel. A controller on the bridge chip controls at least one of the first and second delay circuits to adjust the start time of at least one of the first and second timing signals such that data sequences from the first and second memory chips will be aligned in time. The controller combines the data sequence from the first memory chip with the data sequence from the second memory chip to generate an interleaved serial sequence.

Semiconductor storage device, memory system, and method

According to one embodiment, an electronic apparatus includes an interface circuit connectable to a first signal line, a second signal line, and a third signal line, and a controller. Before transmitting data using the first signal line, the controller is configured to transmit a first command using the first signal line while transmitting a first control signal using the second signal line, and transmit a first address using the first signal line while transmitting a second control signal using the third signal line. While transmitting the data using the first signal line, the controller is configured to transmit at least one of a second command and a second address using the second signal line and the third signal line.

Electronic apparatus and transfer method

According to one embodiment, there is provided an evaluation apparatus including a first data bus and a transmission device. The transmission device is electrically connected to the first data bus at an output side thereof and configured to receive data and another signal different from the data. The transmission device is configured to supply the data to the first data bus in a first period during which a valid signal is in an active level, and supply the another signal to the first data bus in a second period during which the valid signal is in a non-active level.

Evaluation apparatus, semiconductor apparatus, and transmission control method

Growing community of inventors

Kanagawa, Japan

Tomoaki Suzuki