Jsr Corporation

Tomoaki Seko

Hiromitsu Tanaka

Takashi Mori

Junya Suzuki

Masayoshi Ishikawa

Tatsuya Sakai

Shinya Minegishi

Kazunori Takanashi

Yoshio Takimoto

Tooru Kimura

Yuushi Matsumura

Fumihiro Toyokawa

Tomoharu Kawazu

Jyunya Suzuki

Tomoya Taji

Nozomi Satou

A film-forming composition includes a compound including a Si—H bond and an orthoester. The compound preferably includes a structural unit that is a structural unit represented by formula (1-1), a structural unit represented by formula (1-2), or a combination thereof. In the formula (1-1) and the formula (1-2), Rand Reach represent a hydroxy group, a halogen atom, or a monovalent organic group having 1 to 20 carbon atoms; and Rrepresents a substituted or unsubstituted divalent hydrocarbon group having 1 to 20 carbon atoms that bonds to two Si atoms.

Film-forming composition, silicon-containing film, and resist pattern-forming method

A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or &#x2014;OR, and Rrepresents a monovalent organic group.SiX&#x2003;&#x2003;(1)

Pattern-forming method

A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0&#xb0; C., and an organic solvent having a standard boiling point of no less than 150.0&#xb0; C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.

Composition for forming resist underlayer film, and pattern-forming method

A resist pattern-forming method capable of forming a resist pattern excellent in pattern collapse resistance in the case of development with the organic solvent in multilayer resist processes. The method has the steps of: (1) providing a resist underlayer film on a substrate using a composition for forming a resist underlayer film; (2) providing a resist film on the resist underlayer film using a photoresist composition; (3) exposing the resist film; and (4) developing the exposed resist film using a developer solution containing no less than 80% by mass of an organic solvent, in which the composition for forming a resist underlayer film contains (A) a component that includes a polysiloxane chain and that has a carboxyl group, a group that can generate a carboxyl group by an action of an acid, an acid anhydride group or a combination thereof.

Method for forming resist pattern, and composition for forming resist underlayer film

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Tokyo, Japan

Tomoaki Seko