Other

Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Hitachi Ulsi Systems Co., Ltd.

Sanwa Denki Kogyo Co., Ltd.

Akita Electronics Systems Co., Ltd.

Tomoaki Kudaishi

Asao Nishimura

Kunihiro Tsubosaki

Chuichi Miyazaki

Yukiharu Akiyama

Hideki Tanaka

Kunihiko Nishi

Masanori Shibamoto

Akio Hasebe

Ichiro Anjoh

Ryosuke Kimoto

Akira Nagai

Masahiko Ogino

Shuji Eguchi

Hiroshi Koyama

Takehiro Ohnishi

Noriou Shimada

Ichiro Anjo

Hirotaka Nishizawa

Yusuke Sato

Ryota Sato

Masashi Okano

Shinji Moriyama

Akira Katsumata

Nobuyoshi Maejima

Yuichiro Yamada

Naoki Kuroda

Masnori Shibamoto

Takayuki Tsutsui

Masachika Masuda

Satoshi Sakurai

Tamaki Wada

Toshio Sugano

Tomio Yamada

Hirokazu Nakajima

Takayuki Okinaga

Yoshihiko Kobayashi

Susumu Sato

Takashi Emata

Tsutomu Ida

Yoshinori Shiokawa

Masashi Yamaura

Koki Tanimoto

Reiichi Arai

Toshiharu Niitsu

Takayuki Maehara

Shuichiro Azuma

The present invention aims to reduce an exclusively-possessed area of each of bonding wires mounted over a wiring board, for coupling a power amplifying unit of a semiconductor chip and an antenna switch of a second semiconductor chip in a semiconductor device that configures an RF module. In the RF module, the first semiconductor chip and the second semiconductor chip are mounted side by side in a central area of the wiring board. The first semiconductor chip is formed with amplifier circuits and a control circuit and comprises a silicon substrate or a compound semiconductor substrate. On the other hand, the second semiconductor chip is formed with an antenna switch and comprises the silicon substrate or compound semiconductor substrate. Pads of the first semiconductor chip and pads of the second semiconductor chip are respectively electrically coupled to one another. This coupling is carried out by the bonding wires formed in the surface of the wiring board and the bonding wires formed inside the wiring board.

Semiconductor device

A technique is provided for achieving reduction in size of an electronic device with a power amplifier circuit, while enhancing the performance of the electronic device. An RF power module for a mobile communication device includes first and second semiconductor chips, a passive component, and first and second integrated passive components, which are mounted over a wiring board. In the first semiconductor chip, MISFET elements constituting power amplifier circuits for the GSM 900 and for the DCS 1800 are formed, and a control circuit is also formed. In the first integrated passive component, a low pass filter circuit for the GSM 900 is formed, and in the second integrated passive component, a low pass filter circuit for the DCS 1800 is formed. In the second semiconductor chip, antenna switch circuits for the GSM 900 and DCS 1800 are formed. Over the upper surface of the wiring board, the second semiconductor chip is disposed next to the first semiconductor chip between the integrated passive components.

RF power module

A semiconductor device includes a semiconductor chip formed with connection terminals, an elastic structure interposed between a main surface of the chip and a wiring substrate formed with wirings connected at first ends thereof to the connection terminals, and bump electrodes connected to the other ends of the wirings. The connection terminals may be at a center part or in peripheral part(s) of the chip main surface and both the elastic structure and wiring substrate are not provided at locations of connection terminals. A resin body seals at least the connection terminals and the exposed first ends of wirings (leads). In a scheme in which the connection terminals are located in a peripheral part of the chip main surface, the wiring substrate protrudes beyond the chip boundary where the connection terminals are arranged, and the resin body shape is restricted by the protruding part of the wiring substrate.

Semiconductor device and manufacturing method thereof

In a dividing method according to the present invention, a wiring board formed of ceramic is forced up (upper swing) by a lower clamp claw of a clamper, and some of a protruded wiring board portion protruding from a conveying chute is pressed against a support body to perform a first division under bending stress. Thereafter, the upward-located clamper is rotatably swung (lower swing) downward to allow an upper clamp claw to press down the protruded wiring board portion, thereby performing a reverse division at the first division section again as a second division. Since the second division allows a tensile force to act on a remaining and thin non-divided resin portion, the non-divided resin portion is torn off. Thus, the perfect division is enabled. Fractionalizing is done by a one-row division and an individual division so that each semiconductor device is formed.

Manufacturing method of semiconductor device and semiconductor device

A CF card () comprises: a casing constituted by two panel plates () and a frame (); and a printed wiring board () accommodated in the casing. A plurality of claw-like engaging parts () are provided to the peripheries of the panel plates (). When the CF card () is assembled, the engaging parts () of the first panel plate () are inserted into through holes of a long groove () provided in the frame () and then the printed wiring board () is mounted on the panel plate () located at the inside of the frame (). Thereafter, the engaging parts () of the second panel plate () are inserted into the through holes of the long groove () from the surface located in the opposite side of the frame (). There are two types of engaging parts (): one having lances and the other having holes. Inside the through holes, the lances of the engaging parts () of one panel plate () are inserted into the holes of the engaging parts () of the other panel plate ().

Semiconductor device and a method of manufacturing the same

A CF card ( ) comprises: a casing constituted by two panel plates ( ) and a frame ( ); and a printed wiring board ( ) accommodated in the casing. A plurality of claw-like engaging parts ( ) are provided to the peripheries of the panel plates ( ). When the CF card ( ) is assembled, the engaging parts ( ) of the first panel plate ( ) are inserted into through holes of a long groove ( ) provided in the frame ( ) and then the printed wiring board ( ) is mounted on the panel plate ( ) located at the inside of the frame ( ). Thereafter, the engaging parts ( ) of the second panel plate ( ) are inserted into the through holes of the long groove ( ) from the surface located in the opposite side of the frame ( ). There are two types of engaging parts ( ): one having lances and the other having holes. Inside the through holes, the lances of the engaging parts ( ) of one panel plate ( ) are inserted into the holes of the engaging parts ( ) of the other panel plate ( ).

Semiconductor device and its manufacturing method

A ball grid array type semiconductor package includes a semiconductor chip formed with bonding pads, an elastomer bonded to the semiconductor chip, a flexible wiring substrate bonded to the elastomer and formed with wirings connected at one end of the bonding pads of the semiconductor chip, a solder resist formed on the main surface of the flexible wiring substrate and solder bump electrodes connected to the other ends of the wirings. The elastomer is bonded to the flexible wiring substrate on the side of the tape, the solder resist is formed on the side of the wirings, and the solder bump electrodes are connected with the wirings by way of through holes formed in the solder resist.

Method of manufacturing a ball grid array type semiconductor package

A semiconductor device including a semiconductor chip having connection terminals in a peripheral part of a main surface thereof; an elastic body disposed on the main surface leaving the connection terminals exposed; an insulating tape formed on the elastic body and having openings in areas where the connection terminals are situated; plural leads formed on the top surface of the insulating tape, one end of each lead being connected to one of the connection terminals and the other end being disposed on the elastic body; plural bump electrodes formed on the other ends of the plural leads; and a resin body for sealing the connection terminals and one end of each of the leads, wherein the insulating tape protrudes beyond the chip where the plural connection terminals are arranged, and wherein the shape of the resin body is restricted by the protruding part of the insulating tape.

Semiconductor device with elastic structure and wiring

Growing community of inventors

Kodaira, Japan

Tomoaki Kudaishi