Nec Corporation

Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Nippon Telegraph and Telephone Corporation

Tomoaki Kato

Yoshio Takada

Masahiro Kobayashi

Kenji Sato

Kei-Ichiro Kobayashi

Naomi Furuse

Koji Yamazaki

Osamu Wada

Shinji Ishibe

Shoichi Shichimiya

Tatsuya Sasaki

Yukio Fujiwara

Keiro Komatsu

Toshihiro Suzuki

Shigeru Nakamura

Takeshi Okamoto

Yoshiaki Yamada

Takao Morimoto

Junichi Sasaki

Kenji Mizutani

Ikuo Mito

Junichi Shimizu

Shinya Sudo

Mineto Satoh

Masataka Itoh

Iwao Kawamata

Akio Hori

Mitsunori Hama

Hiroshi Nakajoh

A bonded structure, including a Zn-based brazing filler metal and a Cu-based bonding object bonded to each other, wherein the bonded structure includes a joint including a first alloy phase, a second alloy phase and a third alloy phase between the Zn-based brazing filler metal and the Cu-based bonding object, wherein the second alloy phase is formed at an interface between the first alloy phase and the third alloy phase, and wherein, in a cross section parallel to a bonding direction, a ratio of the second alloy phase at the interface between the first alloy phase and the third alloy phase is less than 80%.

Bonded structure, method of manufacturing same, electric motor, and method of manufacturing same

A semiconductor element bonding body including: a substrate, in which a concave portion is formed; and a semiconductor element placed in the concave portion to be mounted to the substrate. A portion of the substrate in which the concave portion is formed is made of Cu. The concave portion has a perimeter portion in which a level difference is formed, and the level difference has a height d of 20 &#x3bc;m or more and less than 50 &#x3bc;m. The concave portion has a bottom surface having a flatness degree of &#x3bb;/8.7 &#x3bc;m or more and &#x3bb;/1.2 &#x3bc;m or less when a wavelength &#x3bb; of a laser is 632.8 nm. A metal film is formed on the semiconductor element, and the bottom surface of the concave portion and the metal film are bonded directly to each other.

Semiconductor element bonding body, semiconductor device, and method of manufacturing semiconductor element bonding body

A method of manufacturing a semiconductor device of the present disclosure includes the steps of sequentially forming an adhesion-improving film, a Pt film, a Sn film, and an Au film on a semiconductor wafer through vapor deposition; dicing the semiconductor wafer to obtain a semiconductor element; sequentially forming a Ni film and an Au film on a substrate through vapor deposition; and laminating the semiconductor element and the substrate so that the Au film formed on the semiconductor element and the Au film formed on the substrate face each other, followed by joining the semiconductor element and the substrate through heating.

Semiconductor device and method for manufacturing same

Provided are a practical rib type optical waveguide in which polarization dependence and wavelength dependence and the like are small and an optical multiplexer/demultiplexer using the same. An optical waveguide type optical multiplexer/demultiplexer of the present invention includes a substrate, M input optical waveguides and N output optical waveguides including a single mode rib type optical waveguide, multi-mode optical interference regions including a rib type optical waveguide, and reversible tapered regions that smoothly connect the input/output optical waveguides to the multi-mode optical interference regions and include M&#xd7;N rib type optical waveguides, and both side surfaces of the multi-mode optical interference region are respectively formed in a stepped shape.

Rib type optical waveguide and optical multiplexer / demultiplexer using same

An optical signal control device includes an optical signal control unit and a drive circuit. The optical signal control unit includes m number of optical waveguides for propagating carrier light and (m&#xd7;n) number of interaction regions, n number of interaction regions formed on each of the optical waveguides. The drive circuit includes (m&#xd7;n) number of phase control units. The (m&#xd7;n) number of phase control unit output a data signal for controlling the action of the (m&#xd7;n) number of interaction regions to each of the (m&#xd7;n) number of interaction regions. Each of the (m&#xd7;n) number of phase control units outputs the data signal so that timing when the carrier light propagates to the interaction region to output the data signal and timing when the data signal arrives at the interaction region are synchronized. One of m and n is two or more.

Optical signal control device and optical signal control method

Waveguide-type optical phase modulator regions of a linear accelerator-type column electrode structure MZ optical modulator are arranged on a semiconductor optical waveguide. A transmission line of an integrated circuit receives a clock signal through a buffer circuit disposed on an input side. Clock terminators are connected between an end of the transmission line and clock terminator power supply electrodes (VCa, VCb). Individual driving circuits receive the clock signal from different positions of the transmission line. An i (1&#x2266;i&#x2266;m, i is an integer)-th individual driving circuit counted from the input side outputs a signal obtained by amplifying a digital input signal in synchronization with the clock signal to an i-th waveguide-type optical phase modulator region.

Optical modulator module, integrated circuit for driving optical modulator, and method for modulating optical signal

An optical modulator module includes an optical modulator including an optical waveguide which conducts an inputted optical signal, and m modulator regions on the optical waveguide; and m discrete driving circuits serially connected to one another. The discrete driving circuits include a driving circuit which outputs a signal obtained from a digital input signal with a synchronization signal to one of the modulator regions, and a phase shifting circuit which outputs a signal resulting from giving a delay to a signal branched from the synchronization signal. A discrete driving circuit receives the signal outputted from the phase shifting circuit. Each of the modulator regions includes modulation electrodes, an electric field caused by a modulation electric signal applied to each of the modulation electrodes penetrates by a penetration length d, and every two adjacent modulation electrodes has a distance Lgiven by L=2d.

Optical modulator module and modulation method for optical signal

The present invention provides a compact, broad-band, and low-drive-voltage optical modulator module capable of generating any multilevel optical modulation. The optical modulator module according to an exemplary aspect of the present invention includes a digital segmented electrode structure optical modulator and m individual driving circuits. The digital segmented electrode structure optical modulator includes semiconductor optical waveguides and at least m waveguide-type optical phase modulator regions. An i-th individual driving circuit includes a driving circuit and a phase shift circuit. The driving circuit amplifies a digital input signal in synchronization with a clock signal and outputs the signal to an i-th waveguide-type optical phase modulator region. The phase shift circuit applies a delay to a signal branched from the clock signal. A j-th individual driving circuit receives an output signal from the phase shift circuit of a (j&#x2212;1)-th individual driving circuit as a clock signal.

Optical modulator module and method for modulating optical signal

The invention provides a semiconductor optical modulator including a two-step mesa optical waveguide having a first clad layer (); a mesa-like core layer () formed over the first clad layer (); and a second clad layer () formed into a mesa shape over the core layer (), and having a mesa width smaller than that of the core layer (). The two-step mesa optical waveguide includes a multi-mode optical waveguide region to which an electric field is applied or into which an electric current is injected, and a single-mode optical waveguide region to which the electric field is not applied and into which the electric current is not injected. When the mesa width of the core layer in the multi-mode optical waveguide region is defined as W, and the mesa width of the core layer in the single-mode optical waveguide region is defined as W, W&#x3e;Wis satisfied.

Semiconductor optical modulator, semiconductor optical integrated device, and method of manufacturing the same

A voltage nonlinear resistor is made of a sintered body that mainly includes zinc oxide grains, spinel grains including zinc and antimony as main ingredients, and a bismuth oxide phase, in which the bismuth oxide phase includes at least one of alkali metals selected from the group of potassium and sodium at a ratio in the range of 0.036 at % or higher and 0.176 at % or lower. The voltage nonlinear resistor has good voltage nonlinearity and loading service life characteristics, and can be used for a lightning arrester.

Voltage nonlinear resistor, lightning arrester equipped with voltage nonlinear resistor, and process for producing voltage nonlinear resistor

Provided are a semiconductor optical modulator and a semiconductor Mach-Zehnder optical modulator of high efficiency and high reliability. The semiconductor optical modulatorof the present invention includes a substrate; a first n-type cladding layer; a semiconductor optical modulation layer; a p-type cladding layer; a second n-type cladding layer; a passivation film; and an electric field-relaxing layer, wherein the first n-type cladding layer, the semiconductor optical modulation layer, the p-type cladding layer, and the second n-type cladding layerare laminated on the substratein this order to form a waveguide structure, the passivation filmis arranged at the side surfaces of the waveguide structure, the electric field-relaxing layeris interposed between the p-type cladding layerand the second n-type cladding layer, and an impurity concentration of the electric field-relaxing layeris lower than that of the p-type cladding layerand that of the second n-type cladding layer

Semiconductor optical modulator and semiconductor mach-zehnder optical modulator

An optical joint () includes a 2&#xd7;2 MMI coupler () and a 2&#xd7;2 MMI coupler () joined to the 2&#xd7;2 MMI coupler (). The 2&#xd7;2 MMI coupler () includes a port () and a port () at one side. The 2&#xd7;2 MMI coupler () includes a port () and a port () at one side. A light-absorbing region () is connected to the port (), and a light-absorbing region (second light-absorbing section) () is connected to the port (). A reflecting boundary () that reflects light propagated through the 2&#xd7;2 MMI coupler () or the 2&#xd7;2 MMI coupler () is formed at the junction portion between the 2&#xd7;2 MMI coupler () and the 2&#xd7;2 MMI coupler ().

Optical joint

A first exemplary aspect of the present invention is a wavelength-tunable optical transmitter including: a semiconductor substrate (); a wavelength-tunable light source that is formed on the semiconductor substrate () and includes at least a first reflector () of a wavelength-tunable type and a gain region (); a semiconductor optical modulator formed on the semiconductor substrate (); a first semiconductor optical waveguide () that is formed on the semiconductor substrate () and smoothly connected to the wavelength-tunable light source; a second semiconductor optical waveguide () that is formed on the semiconductor substrate and smoothly connected to the semiconductor optical modulator; a waveguide coupling region () in which the first and second semiconductor optical waveguides are collinearly coupled with a length Lthat is not equal to m/2 (m: integer) times a complete coupling length L; and a second reflector () formed at an end of the waveguide coupling region ().

Wavelength-tunable optical transmitter

Provided is a traveling-wave type semiconductor optical phase modulator capable of high speed and low voltage operation by improving an n-SI-i-n-type layered structure. A first exemplary aspect of the present invention is a waveguide-type semiconductor optical modulator including: a semiconductor substrate (); a first n-type cladding layer () and a second n-type cladding layer () formed on the semiconductor substrate (); an undoped optical waveguide core layer () and an electron trapping layer () formed between the first n-type cladding layer () and the second n-type cladding layer (); and a hole supplying layer () formed between the undoped optical waveguide core layer () and the electron trapping layer ().

Waveguide-type semiconductor optical modulator and method for manufacturing the same

An optical modulator is provided with a stripe-shaped optical waveguide, which has an upper clad layer, a lower clad layer formed between the upper clad layer and a substrate, and an undoped core layer which is arranged between the upper clad layer and the lower clad layer and has a complex refractive index that changes corresponding to the intensity of an applied electric field, to a signal light propagating inside. On both sides of the stripe-shaped optical waveguide, conductor walls are configured by arranging a pair of parallel blocking flat boards with an insulating wall in between. Thus, the semiconductor optical modulator having a high optical modulation efficiency is provided.

Growing community of inventors

Tokyo, Japan

Tomoaki Kato