Kabushiki Kaisha Toshiba

Tomoaki Hatano

Norihisa Arai

Hiroyuki Kutsukake

Toshifumi Minami

Yoshiko Kato

Kenji Gomikawa

Norio Magome

A semiconductor device includes a semiconductor substrate, an element isolation insulating film dividing an upper portion of the substrate into a plurality of first active regions, a source layer and a drain layer, a gate electrode, a gate insulating film, a first punch-through stopper layer, and a second punch-through stopper layer. The source layer and the drain layer are formed in spaced to each other in an upper portion of each of the first active regions. The first punch-through stopper layer is formed in a region of the first active region directly below the source layer and the second punch-through stopper layer is formed in a region of the first active region directly below the drain layer. The first punch-through stopper layer and the second punch-through stopper layer each has an effective impurity concentration higher than the semiconductor substrate. The first punch-through stopper layer and the source layer are separated in the channel region. The second punch-through stopper layer and the drain layer are separated in the channel region.

Semiconductor device and method for manufacturing the same

A semiconductor device has a semiconductor substrate of a first conductivity type; first to third high-voltage insulated-gate field effect transistors formed on a principal surface of the semiconductor substrate; a first device isolation insulating film that is formed in the semiconductor substrate and isolates the first high-voltage insulated-gate field effect transistor and the second high-voltage insulated-gate field effect transistor from each other; a second device isolation insulating film that is formed in the semiconductor substrate and isolates the first high-voltage insulated-gate field effect transistor and the third high-voltage insulated-gate field effect transistor from each other; a first impurity diffusion layer of the first conductivity type that is formed below the first device isolation insulating film; and a second impurity diffusion layer of the first conductivity type that is formed below the second device isolation insulating film.

Semiconductor device

Growing community of inventors

Kanagawa-ken, Japan

Tomoaki Hatano