Chartered Semiconductor Manufacturing Ltd (corporation)

Globalfoundries Singapore Pte. Ltd.

Tommy Lai

Jia Zhen Zheng

Pradeep Yelehanka

Weining Li

Elgin Kiok Quek

Tze Ho Simon Chan

A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming two trenches in the semiconductor substrate to define an active region therebetween. An implanted source region is formed in one of the trenches on one side of the active region. An implanted drain region is formed in the other trench on the other side of the active region. Shallow trench isolations are then formed in the trenches. One or more gates are formed over the active region, and contacts to the implanted source region and the implanted drain region are formed.

Non-volatile memory manufacturing method using STI trench implantation

An integrated circuit structure includes providing a semiconductor substrate and forming at least one oxide-nitride-oxide dielectric layer above the semiconductor substrate. At least one implantation is formed into at least one area of the semiconductor substrate beneath the oxide-nitride-oxide dielectric layer subsequent to the formation of the oxide-nitride-oxide dielectric layer.

Integrated circuit with protected implantation profiles and method for the formation thereof

An integrated circuit structure includes a semiconductor substrate and a thyristor formed thereon. The thyristor has at least four layers, with three P-N junctions therebetween. At least two of the layers are formed horizontally and at least two of the layers are formed vertically. A gate is formed adjacent at least one of the vertically formed layers. An access transistor is formed on the semiconductor substrate, and an interconnect is formed between the thyristor and the access transistor.

Thyristor-based SRAM

A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming at least one oxide-nitride-oxide dielectric layer above the semiconductor substrate. At least one implantation is formed into at least one area of the semiconductor substrate beneath the oxide-nitride-oxide dielectric layer subsequent to the formation of the oxide-nitride-oxide dielectric layer.

A method for manufacturing an integrated circuit structure includes providing a semiconductor substrate and forming a thyristor thereon. The thyristor has at least four layers, with three P-N junctions therebetween. At least two of the layers are formed horizontally and at least two of the layers are formed vertically. A gate is formed adjacent at least one of the vertically formed layers. An access transistor is formed on the semiconductor substrate, and an interconnect is formed between the thyristor and the access transistor.

Growing community of inventors

Hong Kong, China

Tommy Lai