3M Innovative Properties Company

Corning Research & Development Corporation

Tommie W Kelley

Andrew John Ouderkirk

Michael F Weber

Dawn V Muyres

Todd D Jones

Timothy D Dunbar

Mark J Pellerite

Larry D Boardman

Terrance P Smith

Michael Albert Haase

Catherine A Leatherdale

Patrick R Fleming

Paul Frederic Baude

Steven D Theiss

Kevin Michael Lewandowski

Tzu-Chen Lee

Feng Bai

Donald Kent Larson

Thomas P Hedblom

William Jeffrey Clatanoff

Zachary Michael Thompson

Susannah C Clear

Windy A Santa Cruz

John B Stender

Audrey A Sherman

Terry Lee Smith

Martin B Wolk

Stephen A Johnson

James M Nelson

Philip Edwin Watson

Craig R Schardt

Byron E Trotter

Cary A Kipke

Daniel J Treadwell

Matthew W Gorrell

Dennis Edward Vogel

Kim Marie Vogel

Thomas James Miller

John F Reed

Terence D Neavin

Xiaoguang Sun

Christopher P Gerlach

Lynn E Lorimor

John M Vernon

Arthur L Fry

Charles Allen Shaklee

Michael S Schuffert

Hannah L Stoughton

Nicole J Wagner

Marcus W Rein

Christine L McCool

James E Anderson

Andrew C Smith

Jacob D Carlson

Jessalyn A Cox

Zachary W Boughton

Michael J Stern

Michael L Elam

Jackson H Hedden

Frank Tyneski

Gilles JB Benoit

Filter assemblies are disclosed. In particular, filter assemblies including a filter media and an overlay portion covering the filter media are disclosed. Such filter assemblies may provide both acceptable filtering capacity and cleanable visible front surfaces.

Filter assembly

Filter assemblies are described. In particular, a filter securement assembly for receiving and retaining a filter media in an exhaust hood includes a main panel defining a first end and an opposed second end, a first retainment surface adjacent the first end of the main panel, a first retainment lip adjacent the first retainment surface, a second retainment surface adjacent the second end of the main panel and a second retainment lip adjacent the second retainment surface.

Filter securement assembly

A distribution cabling tape comprises a resilient polymeric base sheet having a first major surface and a second major surface, the first major surface having a continuous lengthwise channel formed in a first portion thereof. The tape also includes an adhesive layer disposed on a second and third portion of the first major surface, the adhesive layer capable of adhering to a concrete or asphalt surface, such as a road, curb, or walkway.

Distribution cabling tape and system

An interdigitated electrode film co-extruded with bus bars for thin film electronics or other devices. First electrode layers are located between first and second major surfaces of the film with a first bus bar electrically connecting and integrated with the first electrode layers. Second electrode layers are located between the first and second major surfaces with a second bus bar electrically connecting and integrated with the second electrode layers. The first electrode layers are interdigitated with the second electrode layers, and insulating layers electrically isolate the first bus bar and electrode layers from the second bus bar and electrode layers. The electrode films include multilayer films with vertical bus bars and multilane films with horizontal bus bars.

Film constructions for interdigitated electrodes with bus bars and methods of making same

A method of forming a light conversion element includes providing a semiconductor construction having a first photoluminescent element epitaxially grown together with a second photoluminescent element. A first region is etched in the first photoluminescent element from a first side of the semiconductor construction and a second region is etched in the second photoluminescent element from a second side of the semiconductor construction. In some embodiments the wavelength converter is attached to an electroluminescent element, such as a light emitting diode (LED).

Method of making double-sided wavelength converter and light generating device using same

Electrically pixelated luminescent devices, methods for forming electrically pixelated luminescent devices, systems including electrically pixelated luminescent devices, and methods for using electrically pixelated luminescent devices are described. More specifically, electrically pixelated luminescent devices that have inner and outer semiconductor layers and a continuous light emitting region, as well as individually addressable electrodes are described.

Electrically pixelated luminescent device

A light emitting device includes a wavelength converter attached to a light emitting diode (LED). The wavelength converter may have etched patterns on both the first and second sides. In some embodiments the first and second sides of the converter each include a respective structure having a different width at its top than at its base. The wavelength converter may include a first photoluminescent element substantially overlying a first region of the LED without overlying a second region of the LED, while a second photoluminescent element substantially overlies the second region without overlying the first region. In some embodiments a passivation layer is disposed over the etched pattern of the first side. A window layer may be disposed between the first and second photoluminescent elements, with non-epitaxial material disposed on first and second sides of one region of the window layer.

Light generating device having double-sided wavelength converter

An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

Down-converted light source with uniform wavelength emission

Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each Ris independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each Ris independently H, an aryl group or R; each Ris independently H or methyl; each Ris independently an alkyl group, a halogen, or R; each Ris independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0-3; with the proviso that at least one repeat unit in the polymer includes an R. These polymers are useful in electronic devices such as organic thin film transistors.

Organic polymers, electronic devices, and methods

A method of making an electronic device by (a) depositing a substantially nonfluorinated polymeric layer onto a dielectric layer using a plasma-based deposition technique selected from the group consisting of (i) plasma polymerizing a precursor comprising monomers, and (ii) sputtering from a target comprising one or more polymers of interpolymerized units of monomers, the monomers being selected from the group consisting of aromatic monomers, substantially hydrocarbon monomers, and combinations thereof; and (b) depositing an organic semiconductor layer adjacent to said polymeric layer.

Method for making electronic devices having a dielectric layer surface treatment

Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

Organic thin film transistor with polymeric interface

Semiconductor devices are described that include a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound. The acenyl group is selected from 2-naphtyl, 2-anthracenyl, or 2-tetracenyl. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a trans-1,2-bis(acenyl)ethylene compound.

Semiconductors containing trans-1,2-bis(acenyl)ethylene compounds

A method for circuit fabrication includes positioning first and second webs of film in proximity to each other, wherein the second web of film defines a deposition mask, and deposition material on the first web of film through the deposition mask pattern defined by the second web of the to create at least a portion of an integrated circuit.

In-line deposition processes for circuit fabrication

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Coon Rapids, MN, United States of America

Tommie W Kelley