Asm IP Holding B.v.

Tommi Paavo Tynell

Viljami J Pore

Zecheng Liu

Yu Xu

Mikko Ruoho

The disclosure relates to methods of filling gaps in semiconductor substrates. A method of filling a gap is disclosed. The method including providing a substrate having a gap in a reaction chamber, providing a first precursor including silicon and carbon into the reaction chamber in a vapor phase, wherein the first precursor includes at least one unsaturated carbon-carbon bond and at least one atom selected from oxygen and nitrogen. The method further includes providing a first plasma into the reaction chamber to polymerize the first precursor for forming a gap filling material, thereby at least partially filling the gap with the gap filling material. In some embodiments, the at least one unsaturated bond is a double bond.

Gapfill methods and processing assemblies

The current disclosure relates to methods of depositing silicon-containing material on a substrate comprising a gap, wherein the method comprises providing the substrate in a reaction chamber and depositing a carbon-containing inhibition layer on the substrate, and depositing silicon-containing material on the substrate. Depositing the inhibition layer comprises supplying a carbon precursor comprising carbon in the reaction chamber and supplying first plasma in the reaction chamber to form a first reactive species from the carbon precursor for forming the inhibition layer on the substrate. The inhibition layer is deposited preferentially in the vicinity of the top of the gap. The disclosure further relates to methods of forming a structure, methods of manufacturing a device and to a semiconductor processing apparatus.

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Espoo, Finland

Tommi Paavo Tynell